100G Flexible IM-DD 850 nm VCSEL Transceiver with Fractional Bit Rate Using Eight-Dimensional PAM

We demonstrate a novel optical transceiver scheme with a net flexible bit rate up to 100Gbit/s with 5 Gbit/s granularity, using an eight-dimensional modulation format family, and investigate its performance on capacity, reach, and power tolerance

Adaptive optical interconnects: The ADDAPT project

Existing optical networks are driven by dynamic user and application demands but operate statically at their maximum performance. Thus, optical links do not offer much adaptability and are not very energy-effcient. In this paper a novel approach of implementing performance and power adaptivity from system down to optical device, electrical circuit and transistor level is proposed. Depending on the actual data load, the number of activated link paths and individual device parameters like bandwidth, clock rate, modulation format and gain are adapted to enable lowering the components supply power. This enables exible energy-efficient optical transmission links which pave the way for massive reductions of CO2 emission and operating costs in data center and high performance computing applications. Within the FP7 research project Adaptive Data and Power Aware Transceivers for Optical Communications (ADDAPT) dynamic high-speed energy-efficent transceiver subsystems are developed for short-range optical interconnects taking up new adaptive technologies and methods. The research of eight partners from industry, research and education spanning seven European countries includes the investigation of several adaptive control types and algorithms, the development of a full transceiver system, the design and fabrication of optical components and integrated circuits as well as the development of high-speed, low-loss packaging solutions. This paper describes and discusses the idea of ADDAPT and provides an overview about the latest research results in this field

Effective 100 Gb/s IM/DD 850-nm Multi- and Single-Mode VCSEL Transmission Through OM4 MMF

To cope with the ever increasing data traffic demands in modern data centers, new approaches and technologies must be explored. Short range optical data links play a key role in this scenario, enabling very high speed data rate links. Recently, great research efforts are being made to improve the performance of vertical-cavity surface-emitting lasers (VCSELs) based transmission links, which constitute a cost-effective solution desirable for massive deployments. In this paper, we experimentally demonstrate intensity-modulation direct-detection transmissions with a data rate of 107.5 Gb/s over 10 m of OM4 multimode fiber (MMF) using a multimode VCSEL at 850 nm, and up to 100 m of OM4 MMF using a single-mode VCSEL at 850 nm. Measured bit error rates were below 7% overhead forward error correction limit of 3.8e−03, thus, achieving an effective bit rate of 100.5 Gb/s. These successful transmissions were achieved by means of the multiband approach of carrierless amplitude phase modulation. To cope with the ever increasing data traffic demands in modern data centers, new approaches and technologies must be explored. Short range optical data links play a key role in this scenario, enabling very high speed data rate links. Recently, great research efforts are being made to improve the performance of vertical-cavity surface-emitting lasers (VCSELs) based transmission links, which constitute a cost-effective solution desirable for massive deployments. In this paper, we experimentally demonstrate intensity-modulation direct-detection transmissions with a data rate of 107.5 Gb/s over 10 m of OM4 multimode fiber (MMF) using a multimode VCSEL at 850 nm, and up to 100 m of OM4 MMF using a single-mode VCSEL at 850 nm. Measured bit error rates were below 7% overhead forward error correction limit of 3.8e-03, thus, achieving an effective bit rate of 100.5 Gb/s. These successful transmissions were achieved by means of the multiband approach of carrierless amplitude phase modulation

Multi-dimensional modeling and simulation of semiconductor nanophotonic devices

Self-consistent modeling and multi-dimensional simulation of semiconductor nanophotonic devices is an important tool in the development of future integrated light sources and quantum devices. Simulations can guide important technological decisions by revealing performance bottlenecks in new device concepts, contribute to their understanding and help to theoretically explore their optimization potential. The efficient implementation of multi-dimensional numerical simulations for computer-aided design tasks requires sophisticated numerical methods and modeling techniques. We review recent advances in device-scale modeling of quantum dot based single-photon sources and laser diodes by self-consistently coupling the optical Maxwell equations with semiclassical carrier transport models using semi-classical and fully quantum mechanical descriptions of the optically active region, respectively. For the simulation of realistic devices with complex, multi-dimensional geometries, we have developed a novel hp-adaptive finite element approach for the optical Maxwell equations, using mixed meshes adapted to the multi-scale properties of the photonic structures. For electrically driven devices, we introduced novel discretization and parameter-embedding techniques to solve the drift-diffusion system for strongly degenerate semiconductors at cryogenic temperature. Our methodical advances are demonstrated on various applications, including vertical-cavity surface-emitting lasers, grating couplers and single-photon sources

Application of nanophotonics to the next generation of surface-emitting lasers

Novel trends and concepts in the design and fabrication of vertical cavity surface-emitting lasers (VCSELs) and their integration in optical networks and implementation in integrated photonics applications are discussed. To serve these goals and match the growing bandwidth demands, significant changes are to be implemented in the device design. New lateral leakage-mediated single-mode VCSELs, including both devices confined by oxide layers and those confined by alloy-intermixed regions, are likely to be good candidates for light sources for the data networks of the future. An overview of the records in VCSEL transmission distances and transmission speeds is discussed in this context

Quantum-dot oxide-confined 850-nm VCSELs with extreme temperature stability operating at 25 Gbit/s up to 180deg C

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