Signature of multilayer growth of 2D layered Bi2Se3 through heteroatom-assisted step-edge barrier reduction

During growth of two-dimensional (2D) materials, abrupt growth of multilayers is practically unavoidable even in the case of well-controlled growth. In epitaxial growth of a quintuple-layered Bi2Se3 film, we observe that the multilayer growth pattern deduced from in situ x-ray diffraction implies nontrivial interlayer diffusion process. Here we find that an intriguing diffusion process occurs at step edges where a slowly downward-diffusing Se adatom having a high step-edge barrier interacts with a Bi adatom pre-existing at step edges. The Se???Bi interaction lowers the high step-edge barrier of Se adatoms. This drastic reduction of the overall step-edge barrier and hence increased interlayer diffusion modifies the overall growth significantly. Thus, a step-edge barrier reduction mechanism assisted by hetero adatom???adatom interaction could be fairly general in multilayer growth of 2D heteroatomic materials

A community-sourced glossary of open scholarship terms

Supplementary Information: This list of terms represents the ‘Open Scholarship Glossary 1.0’ (available at: https://forrt.org/glossary/. Glossary available under a CC BY NC SA 4.0 license at: https://static-content.springer.com/esm/art%3A10.1038%2Fs41562-021-01269-4/MediaObjects/41562_2021_1269_MOESM1_ESM.pdf).https://static-content.springer.com/esm/art%3A10.1038%2Fs41562-021-01269-4/MediaObjects/41562_2021_1269_MOESM1_ESM.pd