A measurement based model of HEMT teking into account the non linear, non uniform transmission line nature of the channel its associated low frequency noise sources

For the first time, a fully measurement based extraction procedure of non linear and non uniform transmission line model of FET devices is proposed. This model describes accurately the distributed nature under the device gate which allows a good distortion prediction (IM3) and promises good perspectives for simulation of noise characteristics in non linear circuits

Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors

International audienc

Physical Low Frequency Noise Sources Associated to Drain and Gate Currents of Ultrathin Gate oxide on n-MOSFETs

International audienc

1/f noise measurements in n-channel MOSFET's processed in 0,25 µm technology- Extraction of BSIM3v3 noise parameters

International audienc

Low frequency noise in III-V high speed devices

International audienc

Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements

International audienceWe have investigated gate and drain current noise on strained-channel n-MOSFETs with a SiGe virtual substrate and a 12 Å thermally nitrided gate oxide using low frequency noise measurements. The power spectral densities (PSD) of the flat-band voltage fluctuations are extracted from both gate and drain current noise. We show that the same oxide trap density profile is involved in drain and gate low frequency noise. A comparison with standard n-MOSFET transistors with the same gate stack process is presented. The flat-band voltage PSD concept is also used to compare both technologies to show that bulk and dielectric quality of strained devices are not degraded with regard to standard n-MOSFETs

Oxide trap characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements

International audienceA characterization of traps in ultrathin-oxide MOSFETs by low frequency noise measurements is presented. Drain and gate current noise measurements are investigated. 1/f drain noise magnitude allows extraction of slow oxide interface trap density. Random Telegraph Signal (R.T.S.) gate noise allows to extract properties of defects of the dielectric, such as trap energy level, cross section and its localization from the Si/Si02 interface

Dc and Low Frequency Noise analysis of hot-carrier induced degradation of low complexity 0.13 µm CMOS bipolar transistors

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Dc and Low Frequency Noise analysis of hot-carrier induced degradation of low complexity 0.13 µm CMOS bipolar transistors, Microelectronics Reliability

International audienceThe dc and the low frequency noise in Si bipolar junction transistors (BJTs) of a 0.13 μm CMOS technology are presented in this paper. In particular, the influence of a superficial base doping (SBD) layer is investigated in devices before and after hot-carrier stress induced degradation. A classical increase in the perimeter non-ideal (generation/recombination) base current is observed on stressed transistors. Prestress 1/f noise analysis shows that both surface and perimeter contribution are present. Their relative importance is dependent on presence or not of the SBD and of the geometry. After stress, a very significant increase in the 1/f noise level is measured. It is associated to the creation of a large number of traps at the emitter perimeter