15 research outputs found
Π ΡΡΠΈΡΡΠΈΠΊΠ° ΠΆΠΈΠ²Π΅Π΅ Π²ΡΠ΅Ρ ΠΆΠΈΠ²ΡΡ
The relevance of Russian language studies as a scientific trend is evidenced by the media that cover the problems of Russian culture, language and literature. This article provides an overview of journals published in Russia and abroad. A brief excursus into the history of Russian language studies is made; its present state is presented on the basis of an analysis of periodic publications. Attention is focused on the international problems: the publication of articles in English. The changes occurring in Russian journals in the light of current trends are characterized. We point out that the main goals and tasks of the journals, as well as other activities (antiplagiat, references, etc.) are aimed at Russian language propaganda via mass media. We present the detailed analysis of the journal "Russian Language Studies" (the former name "Bulletin of Peoplesβ Friendship University of Russiaβ. Series βRussian and foreign languages and methods of teachingβ) in the light of actual problems of modern journals. The conclusions states the problem of the fulfillment of journals' mission: the preservation and promotion of the Russian language in a multipolar world.ΠΠ± Π°ΠΊΡΡΠ°Π»ΡΠ½ΠΎΡΡΠΈ ΡΡΡΠΈΡΡΠΈΠΊΠΈ ΠΊΠ°ΠΊ Π½Π°ΡΡΠ½ΠΎΠ³ΠΎ Π½Π°ΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ ΡΠ²ΠΈΠ΄Π΅ΡΠ΅Π»ΡΡΡΠ²ΡΡΡ Π‘ΠΠ, ΠΎΡΠ²Π΅ΡΠ°ΡΡΠΈΠ΅ ΠΏΡΠΎΠ±Π»Π΅ΠΌΡ ΡΡΡΡΠΊΠΎΠ³ΠΎ ΡΠ·ΡΠΊΠ°, ΠΊΡΠ»ΡΡΡΡΡ ΠΈ Π»ΠΈΡΠ΅ΡΠ°ΡΡΡΡ. Π Π½Π°ΡΡΠΎΡΡΠ΅ΠΉ ΡΡΠ°ΡΡΠ΅ ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½ ΠΎΠ±Π·ΠΎΡ ΡΠΎΡΡΠΈΠΉΡΠΊΠΈΡ
ΠΈ Π·Π°ΡΡΠ±Π΅ΠΆΠ½ΡΡ
ΠΆΡΡΠ½Π°Π»ΠΎΠ², ΠΏΠΎΡΠ²ΡΡΠ΅Π½Π½ΡΡ
Π΄Π°Π½Π½ΠΎΠΉ ΡΠ΅ΠΌΠ°ΡΠΈΠΊΠ΅. Π‘Π΄Π΅Π»Π°Π½ ΠΊΡΠ°ΡΠΊΠΈΠΉ ΡΠΊΡΠΊΡΡΡ Π² ΠΈΡΡΠΎΡΠΈΡ ΡΡΡΠΈΡΡΠΈΠΊΠΈ, ΡΠ°ΡΡΠΌΠΎΡΡΠ΅Π½ΠΎ Π΅Π΅ ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΠΎΠ΅ ΡΠΎΡΡΠΎΡΠ½ΠΈΠ΅ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ Π°Π½Π°Π»ΠΈΠ·Π° ΠΏΠ΅ΡΠΈΠΎΠ΄ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΈΠ·Π΄Π°Π½ΠΈΠΉ. ΠΠΊΡΠ΅Π½ΡΠΈΡΠΎΠ²Π°Π½ΠΎ Π²Π½ΠΈΠΌΠ°Π½ΠΈΠ΅ Π½Π° ΠΈΠ·Π΄Π°Π½ΠΈΠΈ ΡΡΠ°ΡΠ΅ΠΉ Π½Π° Π°Π½Π³Π»ΠΈΠΉΡΠΊΠΎΠΌ ΡΠ·ΡΠΊΠ΅. ΠΠ°Π½ Π°Π½Π°Π»ΠΈΠ· ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠΉ Π² ΡΠ΅Π΄Π°ΠΊΡΠΈΠΎΠ½Π½ΠΎΠΉ ΠΏΠΎΠ»ΠΈΡΠΈΠΊΠ΅ ΠΆΡΡΠ½Π°Π»ΠΎΠ² Ρ ΡΠΎΡΠΊΠΈ Π·ΡΠ΅Π½ΠΈΡ ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΡΡ
ΡΠ΅Π½Π΄Π΅Π½ΡΠΈΠΉ. ΠΡΠΌΠ΅ΡΠ°Π΅ΡΡΡ, ΡΡΠΎ ΠΎΡΠ½ΠΎΠ²Π½ΡΠ΅ ΡΠ΅Π»ΠΈ ΠΈ Π·Π°Π΄Π°ΡΠΈ ΠΆΡΡΠ½Π°Π»ΠΎΠ², Π° ΡΠ°ΠΊΠΆΠ΅ ΡΠ΅ΡΠ΅Π½ΠΈΠ΅ ΠΌΠ½ΠΎΠ³ΠΈΡ
ΠΏΡΠΎΠ±Π»Π΅ΠΌ (Π°Π½ΡΠΈΠΏΠ»Π°Π³ΠΈΠ°Ρ, ΠΎΡΠΎΡΠΌΠ»Π΅Π½ΠΈΠ΅ ΡΡΡΠ»ΠΎΠΊ ΠΈ Π΄Ρ.) Π½Π°ΠΏΡΠ°Π²Π»Π΅Π½Ρ Π½Π° ΠΏΡΠΎΠ΄Π²ΠΈΠΆΠ΅Π½ΠΈΠ΅ ΠΈ ΠΏΡΠΎΠΏΠ°Π³Π°Π½Π΄Ρ ΡΡΡΡΠΊΠΎΠ³ΠΎ ΡΠ·ΡΠΊΠ° ΠΏΠΎΡΡΠ΅Π΄ΡΡΠ²ΠΎΠΌ Π‘ΠΠ. ΠΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½ ΠΏΠΎΠ΄ΡΠΎΠ±Π½ΡΠΉ Π°Π½Π°Π»ΠΈΠ· ΠΆΡΡΠ½Π°Π»Π° Β«Π ΡΡΠΈΡΡΠΈΠΊΠ°Β» (ΡΡΠ°ΡΠΎΠ΅ Π½Π°Π·Π²Π°Π½ΠΈΠ΅ Β«ΠΠ΅ΡΡΠ½ΠΈΠΊ Π Π£ΠΠ. Π‘Π΅ΡΠΈΡ: Π ΡΡΡΠΊΠΈΠΉ ΠΈ ΠΈΠ½ΠΎΡΡΡΠ°Π½Π½ΡΠ΅ ΡΠ·ΡΠΊΠΈ ΠΈ ΠΌΠ΅ΡΠΎΠ΄ΠΈΠΊΠ° ΠΈΡ
ΠΏΡΠ΅ΠΏΠΎΠ΄Π°Π²Π°Π½ΠΈΡΒ») Π² ΡΠ²Π΅ΡΠ΅ Π°ΠΊΡΡΠ°Π»ΡΠ½ΡΡ
ΠΏΡΠΎΠ±Π»Π΅ΠΌ ΠΏΠ΅ΡΠΈΠΎΠ΄ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΈΠ·Π΄Π°Π½ΠΈΠΉ. Π Π²ΡΠ²ΠΎΠ΄Π°Ρ
Π³ΠΎΠ²ΠΎΡΠΈΡΡΡ ΠΎ ΡΠ΅Π°Π»ΠΈΠ·Π°ΡΠΈΠΈ ΠΎΡΠ½ΠΎΠ²Π½ΠΎΠΉ ΠΌΠΈΡΡΠΈΠΈ ΠΆΡΡΠ½Π°Π»ΠΎΠ²: ΡΠΎΡ
ΡΠ°Π½Π΅Π½ΠΈΠΈ ΠΈ ΠΏΡΠΎΠ΄Π²ΠΈΠΆΠ΅Π½ΠΈΠΈ ΡΡΡΡΠΊΠΎΠ³ΠΎ ΡΠ·ΡΠΊΠ° Π² ΠΌΠ½ΠΎΠ³ΠΎΠΏΠΎΠ»ΡΡΠ½ΠΎΠΌ ΠΌΠΈΡΠ΅
Π ΡΡΠΈΡΡΠΈΠΊΠ° ΠΆΠΈΠ²Π΅Π΅ Π²ΡΠ΅Ρ ΠΆΠΈΠ²ΡΡ
The relevance of Russian language studies as a scientific trend is evidenced by the media that cover the problems of Russian culture, language and literature. This article provides an overview of journals published in Russia and abroad. A brief excursus into the history of Russian language studies is made; its present state is presented on the basis of an analysis of periodic publications. Attention is focused on the international problems: the publication of articles in English. The changes occurring in Russian journals in the light of current trends are characterized. We point out that the main goals and tasks of the journals, as well as other activities (antiplagiat, references, etc.) are aimed at Russian language propaganda via mass media. We present the detailed analysis of the journal "Russian Language Studies" (the former name "Bulletin of Peoplesβ Friendship University of Russiaβ. Series βRussian and foreign languages and methods of teachingβ) in the light of actual problems of modern journals. The conclusions states the problem of the fulfillment of journals' mission: the preservation and promotion of the Russian language in a multipolar world.ΠΠ± Π°ΠΊΡΡΠ°Π»ΡΠ½ΠΎΡΡΠΈ ΡΡΡΠΈΡΡΠΈΠΊΠΈ ΠΊΠ°ΠΊ Π½Π°ΡΡΠ½ΠΎΠ³ΠΎ Π½Π°ΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ ΡΠ²ΠΈΠ΄Π΅ΡΠ΅Π»ΡΡΡΠ²ΡΡΡ Π‘ΠΠ, ΠΎΡΠ²Π΅ΡΠ°ΡΡΠΈΠ΅ ΠΏΡΠΎΠ±Π»Π΅ΠΌΡ ΡΡΡΡΠΊΠΎΠ³ΠΎ ΡΠ·ΡΠΊΠ°, ΠΊΡΠ»ΡΡΡΡΡ ΠΈ Π»ΠΈΡΠ΅ΡΠ°ΡΡΡΡ. Π Π½Π°ΡΡΠΎΡΡΠ΅ΠΉ ΡΡΠ°ΡΡΠ΅ ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½ ΠΎΠ±Π·ΠΎΡ ΡΠΎΡΡΠΈΠΉΡΠΊΠΈΡ
ΠΈ Π·Π°ΡΡΠ±Π΅ΠΆΠ½ΡΡ
ΠΆΡΡΠ½Π°Π»ΠΎΠ², ΠΏΠΎΡΠ²ΡΡΠ΅Π½Π½ΡΡ
Π΄Π°Π½Π½ΠΎΠΉ ΡΠ΅ΠΌΠ°ΡΠΈΠΊΠ΅. Π‘Π΄Π΅Π»Π°Π½ ΠΊΡΠ°ΡΠΊΠΈΠΉ ΡΠΊΡΠΊΡΡΡ Π² ΠΈΡΡΠΎΡΠΈΡ ΡΡΡΠΈΡΡΠΈΠΊΠΈ, ΡΠ°ΡΡΠΌΠΎΡΡΠ΅Π½ΠΎ Π΅Π΅ ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΠΎΠ΅ ΡΠΎΡΡΠΎΡΠ½ΠΈΠ΅ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ Π°Π½Π°Π»ΠΈΠ·Π° ΠΏΠ΅ΡΠΈΠΎΠ΄ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΈΠ·Π΄Π°Π½ΠΈΠΉ. ΠΠΊΡΠ΅Π½ΡΠΈΡΠΎΠ²Π°Π½ΠΎ Π²Π½ΠΈΠΌΠ°Π½ΠΈΠ΅ Π½Π° ΠΈΠ·Π΄Π°Π½ΠΈΠΈ ΡΡΠ°ΡΠ΅ΠΉ Π½Π° Π°Π½Π³Π»ΠΈΠΉΡΠΊΠΎΠΌ ΡΠ·ΡΠΊΠ΅. ΠΠ°Π½ Π°Π½Π°Π»ΠΈΠ· ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠΉ Π² ΡΠ΅Π΄Π°ΠΊΡΠΈΠΎΠ½Π½ΠΎΠΉ ΠΏΠΎΠ»ΠΈΡΠΈΠΊΠ΅ ΠΆΡΡΠ½Π°Π»ΠΎΠ² Ρ ΡΠΎΡΠΊΠΈ Π·ΡΠ΅Π½ΠΈΡ ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΡΡ
ΡΠ΅Π½Π΄Π΅Π½ΡΠΈΠΉ. ΠΡΠΌΠ΅ΡΠ°Π΅ΡΡΡ, ΡΡΠΎ ΠΎΡΠ½ΠΎΠ²Π½ΡΠ΅ ΡΠ΅Π»ΠΈ ΠΈ Π·Π°Π΄Π°ΡΠΈ ΠΆΡΡΠ½Π°Π»ΠΎΠ², Π° ΡΠ°ΠΊΠΆΠ΅ ΡΠ΅ΡΠ΅Π½ΠΈΠ΅ ΠΌΠ½ΠΎΠ³ΠΈΡ
ΠΏΡΠΎΠ±Π»Π΅ΠΌ (Π°Π½ΡΠΈΠΏΠ»Π°Π³ΠΈΠ°Ρ, ΠΎΡΠΎΡΠΌΠ»Π΅Π½ΠΈΠ΅ ΡΡΡΠ»ΠΎΠΊ ΠΈ Π΄Ρ.) Π½Π°ΠΏΡΠ°Π²Π»Π΅Π½Ρ Π½Π° ΠΏΡΠΎΠ΄Π²ΠΈΠΆΠ΅Π½ΠΈΠ΅ ΠΈ ΠΏΡΠΎΠΏΠ°Π³Π°Π½Π΄Ρ ΡΡΡΡΠΊΠΎΠ³ΠΎ ΡΠ·ΡΠΊΠ° ΠΏΠΎΡΡΠ΅Π΄ΡΡΠ²ΠΎΠΌ Π‘ΠΠ. ΠΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½ ΠΏΠΎΠ΄ΡΠΎΠ±Π½ΡΠΉ Π°Π½Π°Π»ΠΈΠ· ΠΆΡΡΠ½Π°Π»Π° Β«Π ΡΡΠΈΡΡΠΈΠΊΠ°Β» (ΡΡΠ°ΡΠΎΠ΅ Π½Π°Π·Π²Π°Π½ΠΈΠ΅ Β«ΠΠ΅ΡΡΠ½ΠΈΠΊ Π Π£ΠΠ. Π‘Π΅ΡΠΈΡ: Π ΡΡΡΠΊΠΈΠΉ ΠΈ ΠΈΠ½ΠΎΡΡΡΠ°Π½Π½ΡΠ΅ ΡΠ·ΡΠΊΠΈ ΠΈ ΠΌΠ΅ΡΠΎΠ΄ΠΈΠΊΠ° ΠΈΡ
ΠΏΡΠ΅ΠΏΠΎΠ΄Π°Π²Π°Π½ΠΈΡΒ») Π² ΡΠ²Π΅ΡΠ΅ Π°ΠΊΡΡΠ°Π»ΡΠ½ΡΡ
ΠΏΡΠΎΠ±Π»Π΅ΠΌ ΠΏΠ΅ΡΠΈΠΎΠ΄ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΈΠ·Π΄Π°Π½ΠΈΠΉ. Π Π²ΡΠ²ΠΎΠ΄Π°Ρ
Π³ΠΎΠ²ΠΎΡΠΈΡΡΡ ΠΎ ΡΠ΅Π°Π»ΠΈΠ·Π°ΡΠΈΠΈ ΠΎΡΠ½ΠΎΠ²Π½ΠΎΠΉ ΠΌΠΈΡΡΠΈΠΈ ΠΆΡΡΠ½Π°Π»ΠΎΠ²: ΡΠΎΡ
ΡΠ°Π½Π΅Π½ΠΈΠΈ ΠΈ ΠΏΡΠΎΠ΄Π²ΠΈΠΆΠ΅Π½ΠΈΠΈ ΡΡΡΡΠΊΠΎΠ³ΠΎ ΡΠ·ΡΠΊΠ° Π² ΠΌΠ½ΠΎΠ³ΠΎΠΏΠΎΠ»ΡΡΠ½ΠΎΠΌ ΠΌΠΈΡΠ΅
Paraelectric KHPO Nanocrystals in Monolithic Mesoporous Silica: Structure and Lattice Dynamics
Combining dielectric crystals with mesoporous solids allows a versatile
design of functional nanomaterials, where the porous host provides a mechanical
rigid scaffold structure and the molecular filling adds the functionalization.
Here, we report a study of the complex lattice dynamics of a
SiO:KHPO nanocomposite consisting of a monolithic, mesoporous
silica glass host with KHPO nanocrystals embedded in its tubular
channels 12 nm across. A micro-Raman investigation performed in the
spectral range of 70-1600 cm reveals the complex lattice dynamics of the
confined crystals. Their Raman spectrum resembles the one taken from bulk
KHPO crystals and thus, along with X-ray diffraction experiments,
corroborates the successful solution-based synthesis of KHPO
nanocrystals with a structure analogous to the bulk material. We succeeded in
observing not only the high-frequency internal modes (900-1200
cm), typical of internal vibrations of the PO tetrahedra, but, more
importantly, also the lowest frequency modes typical of bulk KHPO
crystals. The experimental Raman spectrum was interpreted with a group theory
analysis and first-principle lattice dynamics calculations. The analysis of
calculated eigen-vectors indicates the involvement of hydrogen atoms in most
phonon modes corroborating the substantial significance of the hydrogen
subsystem in the lattice dynamics of paraelectric bulk and of KHPO
crystals in extreme spatial confinement. A marginal redistribution of relative
Raman intensities of the confined compared to unconfined crystals presumably
originates in slightly changed crystal fields and interatomic interactions, in
particular for the parts of the nanocrystals in close proximity to the silica
pore surfaces.Comment: 10 pages, 4 figures, in pres
Manifestation of Structure of Electron Bands in Double-Resonant Raman Spectra of Single-Walled Carbon Nanotubes
Silicon Substrate Strained and Structured via Cavitation Effect for Photovoltaic and Biomedical Application
Structural Modification of Single-Layer Graphene Under Laser Irradiation Featured by Micro-Raman Spectroscopy
Abstract Confocal micro-Raman spectroscopy is used as a sensitive tool to study the nature of laser-induced defects in single-layer graphene. Appearance and drastic intensity increase of D- and Dβ² modes in the Raman spectra at high power of laser irradiation is related to generation of structural defects. Time- and power-dependent evolution of Raman spectra is studied. The dependence of relative intensity of defective D- and Dβ² bands is analyzed to relate the certain types of structural defects. The surface density of structural defects is estimated from the intensity ratio of D- and G bands using the D-band activation model. Unusual broadening of the D band and splitting of the G band into Gβ and G+ components with redistribution of their intensities is observed at high laser power and exposition. Position of the G+ band is discussed in relation with nonuniform doping of graphene with charge impurities. Simultaneous presence in the Raman spectra of heavily irradiated graphene of rather narrow G band and broaden D band is explained by coexistence within the Raman probe of more and less damaged graphene areas. This assumption is additionally confirmed by confocal Raman mapping of the heavily irradiated area
Resonance Raman Spectroscopy of Mn-Mg<i><sub>k</sub></i> Cation Complexes in GaN
Resonance Raman analysis is performed in order to gain insight into the nature of impurity-induced Raman features in GaN:(Mn,Mg) hosting Mn-Mgk cation complexes and representing a prospective strategic material for the realization of full-nitride photonic devices emitting in the infra-red. It is found that in contrast to the case of GaN:Mn, the resonance enhancement of Mn-induced modes at sub-band excitation in Mg co-doped samples is not observed at an excitation of 2.4 eV, but shifts to lower energies, an effect explained by a resonance process involving photoionization of a hole from the donor level of Mn to the valence band of GaN. Selective excitation within the resonance Raman conditions allows the structure of the main Mn-induced phonon band at ~670 cm−1 to be resolved into two distinct components, whose relative intensity varies with the Mg/Mn ratio and correlates with the concentration of different Mn-Mgk cation complexes. Moreover, from the relative intensity of the 2LO and 1LO Raman resonances at inter-band excitation energy, the Huang-Rhys parameter has been estimated and, consequently, the strength of the electron-phonon interaction, which is found to increase linearly with the Mg/Mn ratio. Selective temperature-dependent enhancement of the high-order multiphonon peaks is due to variation in resonance conditions of exciton-mediated outgoing resonance Raman scattering by detuning the band gap
Vickers Hardness of Diamond and cBN Single Crystals: AFM Approach
Atomic force microscopy in different operation modes (topography, derivative topography, and phase contrast) was used to obtain 3D images of Vickers indents on the surface of diamond and cBN single crystals with high spatial resolution. Confocal Raman spectroscopy and Kelvin probe force microscopy were used to study the structure of the material in the indents. It was found that Vickers indents in diamond has no sharp and clear borders. However, the phase contrast operation mode of the AFM reveals a new viscoelastic phase in the indent in diamond. Raman spectroscopy and Kelvin probe force microscopy revealed that the new phase in the indent is disordered graphite, which was formed due to the pressure-induced phase transformation in the diamond during the hardness test. The projected contact area of the graphite layer in the indent allows us to measure the Vickers hardness of type-Ib synthetic diamond. In contrast to diamond, very high plasticity was observed for 0.5 N load indents on the (001) cBN single crystal face. Radial and ring cracks were absent, the shape of the indents was close to a square, and there were linear details in the indent, which looked like slip lines. The Vickers hardness of the (111) synthetic diamond and (111) and (001) cBN single crystals were determined using the AFM images and with account for the elastic deformation of the diamond Vickers indenter during the tests
Solar Explosive Evaporation Growth of ZnO Nanostructures
For the first time, we present a novel method of explosive evaporation (MEE) for the deposition of ZnO nanostructures using concentrated solar radiation for precursor evaporation. Zinc acetylacetonate powder and a mixture of ZnO with graphite powders are used as precursors for the deposition of ZnO nanostructures. ZnO nanostructures are deposited on Au/Si, Ag/Si, and unpolished Si substrates by MEE. The scanning electron microscopy, energy dispersive X-ray analysis, X-ray diffraction, Raman scattering, photoluminescence, and Fourier transformed infrared spectroscopy are used for sample characterization. We demonstrate that the changing of precursors and the substrate types allows ZnO nanostructures to be grown with diverse morphologies: hexagons, spheres, and needles. The properties of ZnO nanostructures deposited on unpolished, coated by Ag and Au silicon substrates are discussed. MME using concentrated solar radiation is promising method for applications in the semiconductor industry as an economically efficient environmentally-friendly method for the growth of nanostructures
Si-rich Al2O3 films grown by RF magnetron sputtering: structural and photoluminescence properties versus annealing treatment
International audienceSilicon-rich Al2O3 films (Six(Al2O3)1βx) were co-sputtered from two separate silicon and alumina targets onto a long silicon oxide substrate. The effects of different annealing treatments on the structure and light emission of the films versus x were investigated by means of spectroscopic ellipsometry, X-ray diffraction, micro-Raman scattering, and micro-photoluminescence (PL) methods. The formation of amorphous Si clusters upon the deposition process was found for the films with x β₯ 0.38. The annealing treatment of the films at 1,050Β°C to 1,150Β°C results in formation of Si nanocrystallites (Si-ncs). It was observed that their size depends on the type of this treatment. The conventional annealing at 1,150Β°C for 30 min of the samples with x = 0.5 to 0.68 leads to the formation of Si-ncs with the mean size of about 14 nm, whereas rapid thermal annealing of similar samples at 1,050Β°C for 1 min showed the presence of Si-ncs with sizes of about 5 nm. Two main broad PL bands were observed in the 500- to 900-nm spectral range with peak positions at 575 to 600 nm and 700 to 750 nm accompanied by near-infrared tail. The low-temperature measurement revealed that the intensity of the main PL band did not change with cooling contrary to the behavior expected for quantum confined Si-ncs. Based on the analysis of PL spectrum, it is supposed that the near-infrared PL component originates from the exciton recombination in the Si-ncs. However, the most intense emission in the visible spectral range is due to either defects in matrix or electron states at the Si-nc/matrix interface