Impact of local stacking on the graphene-impurity interaction: theory and experiments

We investigate the graphene-impurity interaction problem by combining experimental - scanning tunneling microscopy (STM) and spectroscopy (STS) - and theoretical - Anderson impurity model and density functional theory (DFT) calculations - techniques. We use graphene on the SiC(000-1)(2x2)_C reconstruction as a model system. The SiC substrate reconstruction is based on silicon adatoms. Graphene mainly interacts with the dangling bonds of these adatoms which act as impurities. Graphene grown on SiC(000-1)(2x2)_C shows domains with various orientations relative to the substrate so that very different local graphene/Si adatom stacking configurations can be probed on a given grain. The position and width of the adatom (impurity) state can be analyzed by STM/STS and related to its local environment owing to the high bias electronic transparency of graphene. The experimental results are compared to Anderson's model predictions and complemented by DFT calculations for some specific local environments. We conclude that the adatom resonance shows a smaller width and a larger shift toward the Dirac point for an adatom at the center of a graphene hexagon than for an adatom just on top of a C graphene atom.Comment: 13 pages, 6 figures, Accepted for publication in Phys. Rev.

Graphene on the C-terminated SiC (000 1ˉ\bar{1}) surface: An ab initio study

The atomic and electronic structures of a graphene layer on top of the $(2\times2)$ reconstruction of the SiC (000$\bar{1}$) surface are studied from ab initio calculations. At variance with the (0001) face, no C bufferlayer is found here. Si adatoms passivate the substrate surface so that the very first C layer presents a linear dispersion characteristic of graphene. A small graphene-substrate interaction remains in agreement with scanning tunneling experiments (F.Hiebel et al. {\it Phys. Rev. B} {\bf 78} 153412 (2008)). The stacking geometry has little influence on the interaction which explains the rotational disorder observed on this face.Comment: 4 pages, 3 figures, additional materia

Journées de rencontres et d’échanges en Pays Pyrénées-Méditerranée (Vallespir) : valoriser les espaces forestiers méditerranéens tout en conciliant nature et systèmes productifs - Compte rendu de deux journées de terrain

L’association Forêt Méditerranéenne a organisé les 22 et 23 juin 2016, deux journées d’échanges en Pays Pyrénées-Méditerranée. Après plusieurs années de travaux et réflexions sur l’innovation et sur une meilleure conciliation entre nature et systèmes productifs, ces journées ont été l’occasion de mettre en lumière les différents regards que portent les acteurs locaux sur la nature et la forêt, et d’illustrer les outils qui permettent tout particulièrement la « conciliation » des différents enjeux. Cet article donne un aperçu des sites visités sur le terrain lors de ces deux journées qui ont rassemblé une soixantaine de participants

Quasiparticle Chirality in Epitaxial Graphene Probed at the Nanometer Scale

Graphene exhibits unconventional two-dimensional electronic properties resulting from the symmetry of its quasiparticles, which leads to the concepts of pseudospin and electronic chirality. Here we report that scanning tunneling microscopy can be used to probe these unique symmetry properties at the nanometer scale. They are reflected in the quantum interference pattern resulting from elastic scattering off impurities, and they can be directly read from its fast Fourier transform. Our data, complemented by theoretical calculations, demonstrate that the pseudospin and the electronic chirality in epitaxial graphene on SiC(0001) correspond to the ones predicted for ideal graphene.Comment: 4 pages, 3 figures, minor change

Electron states of mono- and bilayer graphene on SiC probed by STM

We present a scanning tunneling microscopy (STM) study of a gently-graphitized 6H-SiC(0001) surface in ultra high vacuum. From an analysis of atomic scale images, we identify two different kinds of terraces, which we unambiguously attribute to mono- and bilayer graphene capping a C-rich interface. At low temperature, both terraces show $(\sqrt{3}\times \sqrt{3})$ quantum interferences generated by static impurities. Such interferences are a fingerprint of $\pi$-like states close to the Fermi level. We conclude that the metallic states of the first graphene layer are almost unperturbed by the underlying interface, in agreement with recent photoemission experiments (A. Bostwick et al., Nature Physics 3, 36 (2007))Comment: 4 pages, 3 figures submitte

Unraveling the intrinsic and robust nature of van hove singularities in twisted bilayer graphene by scanning tunneling microscopy and theoretical analysis

Extensive scanning tunneling microscopy and spectroscopy experiments complemented by first-principles and parametrized tight binding calculations provide a clear answer to the existence, origin, and robustness of vanHove singularities (vHs) in twisted graphene layers. Our results are conclusive: vHs due to interlayer coupling are ubiquitously present in a broad range (from 1º to 10º) of rotation angles in our graphene on 6H-SiC(000-1) samples. From the variation of the energy separation of the vHs with the rotation angle we are able to recover the Fermi velocity of a graphene monolayer as well as the strength of the interlayer interaction. The robustness of the vHs is assessed both by experiments, which show that they survive in the presence of a third graphene layer, and by calculations, which test the role of the periodic modulation and absolute value of the interlayer distance. Finally, we clarify the role of the layer topographic corrugation and of electronic effects in the apparent moiré contrast measured on the STM imagesThis work was supported by Spain’s MICINN under Grants No. MAT2010-14902, No. CSD2010-00024, and No. CSD2007-00050, and by Comunidad de Madrid under Grant No. S2009/MAT-1467. M. M. U., I. B., P. M, J.-Y.V., L. M., and J. M. G.-R. also acknowledge the PHC Picasso program for financial support (Project No. 22885NH). I. B. was supported by a Ramón y Cajal project of the Spanish MEC. L. M., P. M., and J.-Y.V. acknowledge support from Fondation Nanosciences (Dispograph project

Quantum Confinement of Dirac Quasiparticles in Graphene Patterned with Sub‐Nanometer Precision

Quantum confinement of graphene Dirac‐like electrons in artificially crafted nanometer structures is a long sought goal that would provide a strategy to selectively tune the electronic properties of graphene, including bandgap opening or quantization of energy levels. However, creating confining structures with nanometer precision in shape, size, and location remains an experimental challenge, both for top‐down and bottom‐up approaches. Moreover, Klein tunneling, offering an escape route to graphene electrons, limits the efficiency of electrostatic confinement. Here, a scanning tunneling microscope (STM) is used to create graphene nanopatterns, with sub‐nanometer precision, by the collective manipulation of a large number of H atoms. Individual graphene nanostructures are built at selected locations, with predetermined orientations and shapes, and with dimensions going all the way from 2 nm up to 1 µm. The method permits the patterns to be erased and rebuilt at will, and it can be implemented on different graphene substrates. STM experiments demonstrate that such graphene nanostructures confine very efficiently graphene Dirac quasiparticles, both in 0D and 1D structures. In graphene quantum dots, perfectly defined energy bandgaps up to 0.8 eV are found that scale as the inverse of the dot’s linear dimension, as expected for massless Dirac fermions.This work was supported by AEI and FEDER under projects MAT2016-80907-P and MAT2016-77852-C2-2-R (AEI/FEDER, UE) by the Fundación Ramón Areces, the Comunidad de Madrid NMAT2D-CM program under grant S2018/NMT-4511, and the Spanish Ministry of Science and Innovation, through the “María de Maeztu” Programme for Units of Excellence in R&D (CEX2018-000805-M). European Union through the FLAG-ERA program HiMagGraphene project PCIN-2015-030; No. ANR-15-GRFL-0004) and the Graphene Flagship program (Grant agreement 604391). J.L.L acknowledges financial support from the ETH Fellowship program; J.F.-R. acknowledges supported by Fundação para a Ciência e a Tecnologia grants P2020-PTDC/FIS-NAN/3668/2014 and TAPEXPL/NTec/0046/2017

Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

Few- and single-layer MoS2 host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expression of all three effects and identify to what extent they are intrinsic to the material or extrinsic to it, i.e., related to its local environment. We do so by using different sources of MoS2 - a natural one and one prepared at high pressure and high temperature - and different substrates bringing varying amounts of charged impurities and by separating the contributions of internal strain and doping in Raman spectra. Photoluminescence unveils various optically active excitonic complexes. We discover a defect-bound state having a low binding energy of 20 meV that does not appear sensitive to strain and doping, unlike charged excitons. Conversely, the defect does not significantly dope or strain MoS2. Scanning tunneling microscopy and density functional theory simulations point to substitutional atoms, presumably individual nitrogen atoms at the sulfur site. Our work shows the way to a systematic understanding of the effect of external and internal fields on the optical properties of two-dimensional materials