Cyclotron resonance photoconductivity of a two-dimensional electron gas in HgTe quantum wells

Far-infrared cyclotron resonance photoconductivity (CRP) is investigated in HgTe quantum wells (QWs) of various widths grown on (013) oriented GaAs substrates. It is shown that CRP is caused by the heating of two-dimensional electron gas (2DEG). From the resonance magnetic field strength effective masses and their dependence on the carrier concentration is obtained. We found that the effective mass in each sample slightly increases from the value (0.0260 \pm 0.0005)m_0 at N_s = 2.2x10^11 cm^(-2) to (0.0335 \pm 0.0005)m_0 at N_s = 9.6x10^11 cm^(-2). Compared to determination of effective masses by the temperature dependence of magnitudes of the Shubnikov-de Haas (SdH) oscillations used so far in this material our measurements demonstrate that the CRP provides a more accurate (about few percents) tool. Combining optical methods with transport measurements we found that the transport time substantially exceeds the cyclotron resonance lifetime as well as the quantum lifetime which is the shortest.Comment: 3 pages, 2 figure

Ion channel TRPA₁ is a promising therapeutic target for treatment of pain

In the last time information about the role of TRPA₁ in pain and cold sensitivity, as well as in the formation and maintenance of inflammation is increasing in scientific literature. Given this information, the interest for search and study of pharmacological agents, which selectively blocked of TRPA₁ and reduced the severity of pain and inflammation is increasin

Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator

The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE n (p)-Hg0.78Cd0.22Te with insulator coating SiO2/Si3N4 and Al2O3 in the test signal frequency range 10 kHz-1 MHz at temperatures ranging from 8 to 220 K. The main parameters of MIS structures with different insulators were determined. MIS structures with Al2O3 have a large enough insulator capacitance (compared to SiO2/Si3N4), a significant modulation capacitance on the CV characteristics, high dielectric strength and low values of the flat-band voltage. The effective charge density found from the value of the flat-band voltage and slow interface trap density for structures with Al2O3 comparable with the corresponding densities for structures with SiO2/Si3N4

Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator

The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe on the admittance of MIS structures based on MBE-grown n-Hg1–xCdxTe (x = 0.22–0.23) with the Al2O3 insulating coating has been experimentally studied. It has been shown that the structures with a gradedgap layer are characterized by a deeper and wider capacitance dip in the low-frequency capacitance–voltage (CV) characteristic and by higher values of the differential resistance of the space-charge region than the structures without such a layer. It has been found that the main features of the hysteresis of capacitance dependences typical of the graded-gap structures with SiO2/Si3N4 are also characteristic of the MIS structures with the Al2O3 insulator. The factors that cause an increase in the CV characteristic hysteresis upon formation of the graded-gap layer in structures with SiO2/Si3N4 or Al2O3 are still debatable, although it may be assumed that oxygen plays a certain role in formation of this hysteresis