Aerogel-Based Antennas for Aerospace and Terrestrial Applications

Systems and methods for lightweight, customizable antenna with improved performance and mechanical properties are disclosed. In some aspects, aerogels can be used, for example, as a substrate for antenna fabrication. The reduced weight and expense, as well as the increased ability to adapt antenna designs, permits a systems to mitigate a variety of burdens associated with antennas while providing added benefits

Nonohmic conductivity as a probe of crossover from diffusion to hopping in two dimensions

We show that the study of conductivity nonlinearity gives a possibility to determine the condition when the diffusion conductivity changes to the hopping one with increasing disorder. It is experimentally shown that the conductivity of single quantum well GaAs/InGaAs/GaAs heterostructures behaves like diffusive one down to value of order $10^{-2}e^2/h$.Comment: 4 pages, 2 figure

Frequency Scaling of Microwave Conductivity in the Integer Quantum Hall Effect Minima

We measure the longitudinal conductivity $\sigma_{xx}$ at frequencies $1.246 {\rm GHz} \le f \le 10.05$ GHz over a range of temperatures $235 {\rm mK} \le T \le 4.2$ K with particular emphasis on the Quantum Hall plateaus. We find that $Re(\sigma_{xx})$ scales linearly with frequency for a range of magnetic field around the center of the plateaus, i.e. where $\sigma_{xx}(\omega) \gg \sigma_{xx}^{DC}$. The width of this scaling region decreases with higher temperature and vanishes by 1.2 K altogether. Comparison between localization length determined from $\sigma_{xx}(\omega)$ and DC measurements on the same wafer show good agreement.Comment: latex 4 pages, 4 figure

1/f noise in a dilute GaAs two-dimensional hole system in the insulating phase

We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the metal-insulator transition one, the temperature dependence of the resistance is either power-like or simply activated. The noise decreases when the temperature or the density increase. These results contradict the standard description of independent particles in the strong localization regime. On the contrary, they agree with the percolation picture suggested by higher density results. The physical nature of the system could be a mixture of a conducting and an insulating phase. We compare our results with those of composite thin films.Comment: 4 pages, 3 figures; to appear in Physica E (EP2DS-16 proceedings

The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the electronic states in all films are localized well up to the room temperature over the experimentally accessible range of gate voltage. This manifests in two dimensional (2D) variable range hopping (VRH) at high temperatures, while below \sim 30 K the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T0) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate are the dominant source of disorder in MoS2 field effect devices, which leads to carrier localization as well.Comment: 10 pages, 5 figures; ACS Nano (2011

Onset of Superfluidity in 4He Films Adsorbed on Disordered Substrates

We have studied 4He films adsorbed in two porous glasses, aerogel and Vycor, using high precision torsional oscillator and DC calorimetry techniques. Our investigation focused on the onset of superfluidity at low temperatures as the 4He coverage is increased. Torsional oscillator measurements of the 4He-aerogel system were used to determine the superfluid density of films with transition temperatures as low as 20 mK. Heat capacity measurements of the 4He-Vycor system probed the excitation spectrum of both non-superfluid and superfluid films for temperatures down to 10 mK. Both sets of measurements suggest that the critical coverage for the onset of superfluidity corresponds to a mobility edge in the chemical potential, so that the onset transition is the bosonic analog of a superconductor-insulator transition. The superfluid density measurements, however, are not in agreement with the scaling theory of an onset transition from a gapless, Bose glass phase to a superfluid. The heat capacity measurements show that the non-superfluid phase is better characterized as an insulator with a gap.Comment: 15 pages (RevTex), 21 figures (postscript

Anomalous Hopping Exponents of Ultrathin Films of Metals

The temperature dependence of the resistance R(T) of ultrathin quench-condensed films of Ag, Bi, Pb and Pd has been investigated. In the most resistive films, R(T)=Roexp(To/T)^x, where x=0.75. Surprisingly, the exponent x was found to be constant for a wide range of Ro and To in all four materials, possibly implying a consistent underlying conduction mechanism. The results are discussed in terms of several different models of hopping conduction.Comment: 6 pages, 5 figure

Absence of Floating Delocalized States in a Two-Dimensional Hole Gas

By tracking the delocalized states of the two-dimensional hole gas in a p-type GaAs/AlGaAs heterostructure as a function of magnetic field, we mapped out a phase diagram in the density-magnetic-field plane. We found that the energy of the delocalized state from the lowest Landau level flattens out as the magnetic field tends toward zero. This finding is different from that for the two-dimensional electron system in an n-type GaAs/AlGaAs heterostructure where delocalized states diverge in energy as B goes to zero indicating the presence of only localized states below the Fermi energy. The possible connection of this finding to the recently observed metal-insulator transition at B = 0 in the two-dimensional hole gas systems is discussed.Comment: 10 pages, 4 Postscript figures, To be published in Physical Review B (Rapid Communications) 58, Sept. 15, 199

Quantum corrections to conductivity: from weak to strong localization

Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the conductivity is diffusive for $k_F l=25-2$ and behaves like diffusive one for $k_F l=2-0.5$ down to the temperature T=0.4 K. It has been therewith found that the quantum corrections are not small at low temperature when $k_F l\simeq 1$. They are close in magnitude to the Drude conductivity so that the conductivity $\sigma$ becomes significantly less than $e^{2}/h$ (the minimal $\sigma$ value achieved in our experiment is about $3\times 10^{-8}\Omega^{-1}$ at $k_Fl\simeq 0.5$ and $T=0.46$ K). We conclude that the temperature and magnetic field dependences of conductivity in whole $k_Fl$ range are due to changes of quantum corrections.Comment: RevTex 4.0, 10 figures, 7 two-column page