High quality factor 1-D Er 3+ -activated dielectric microcavity fabricated by RF-sputtering

Rare earth-activated 1-D photonic crystals were fabricated by RF-sputtering technique. The cavity is constituted by an Er3+-doped SiO2 active layer inserted between two Bragg reflectors consisting of ten pairs of SiO2/TiO2 layers. Scanning electron microscopy is employed to put in evidence the quality of the sample, the homogeneities of the layers thickness and the good adhesion among them. Near infrared transmittance and variable angle reflectance spectra confirm the presence of a stop band from 1500 nm to 2000 nm with a cavity resonance centered at 1749 nm at 0° and a quality factor of 890. The influence of the cavity on the 4I13/2 -> 4I15/2 emission band of Er3+ ion is also demonstrated

A thiazolo[5,4-: D] thiazole-bridged porphyrin organic framework as a promising nonlinear optical material

Porphyrin-based porous organic frameworks are an important group of materials gaining interest due to their structural diversity and distinct opto-electronic properties. However, these materials are seldom explored for nonlinear optical (NLO) applications. In this work, we investigate a thiazolo[5,4-d]thiazole-bridged porous, porphyrin framework (Por-TzTz-POF) with promising NLO properties. The planar TzTz moiety coupled with integrated porphyrin units enables efficient π-conjugation and charge distribution in the Por-TzTz-POF resulting in a high nonlinear absorption coefficient (β = 1100 cm GW-1) with figure of merit (FoM) σ1/σ0 = 5571, in contrast to analogous molecules and material counterparts e.g. metal-organic frameworks (MOFs; β = ∼0.3-0.5 cm GW-1), molecular porphyrins (β = ∼100-400 cm GW-1), graphene (β = 900 cm GW-1), and covalent organic frameworks (Por-COF-HH; β = 1040 cm GW-1 and FoM = 3534). This journal is © The Royal Society of Chemistry

Fast-Response Micro-Phototransistor Based on MoS2/Organic Molecule Heterojunction

Over the past years, molybdenum disulfide (MoS2) has been the most extensively studied two-dimensional (2D) semiconductormaterial. With unique electrical and optical properties, 2DMoS2 is considered to be a promising candidate for future nanoscale electronic and optoelectronic devices. However, charge trapping leads to a persistent photoconductance (PPC), hindering its use for optoelectronic applications. To overcome these drawbacks and improve the optoelectronic performance, organic semiconductors (OSCs) are selected to passivate surface defects, tune the optical characteristics, and modify the doping polarity of 2D MoS2. Here, we demonstrate a fast photoresponse in multilayer (ML) MoS2 by addressing a heterojunction interface with vanadylphthalocyanine (VOPc) molecules. The MoS2/VOPc van der Waals interaction that has been established encourages the PPC effect in MoS2 by rapidly segregating photo-generated holes, which move away from the traps of MoS2 toward the VOPc molecules. The MoS2/VOPc phototransistor exhibits a fast photo response of less than 15 ms for decay and rise, which is enhanced by 3ordersof magnitude in comparison to that of a pristine MoS2-based phototransistor (seconds to tens of seconds). This work offers a means to realize high-performance transition metal dichalcogenide (TMD)-based photodetection with a fast response speed

Selective Out‐of‐Plane Optical Coupling between Vertical and Planar Microrings in a 3D Configuration

3D photonic integrated circuits are expected to play a key role in future optoelectronics with efficient signal transfer between photonic layers. Here, the optical coupling of tubular microcavities, supporting resonances in a vertical plane, with planar microrings, accommodating in‐plane resonances, is explored. In such a 3D coupled composite system with largely mismatched cavity sizes, periodic mode splitting and resonant mode shifts are observed due to mode‐selective interactions. The axial direction of the microtube cavity provides additional design freedom for selective mode coupling, which is achieved by carefully adjusting the axial displacement between the microtube and the microring. The spectral anticrossing behavior is caused by strong coupling in this composite optical system and is excellently reproduced by numerical modeling. Interfacing tubular microcavities with planar microrings is a promising approach toward interlayer light transfer with added optical functionality in 3D photonic systems

Experimental observation of Berry phases in optical Möbius-strip microcavities

The Möbius strip, a fascinating loop structure with one-sided topology, provides a rich playground for manipulating the non-trivial topological behaviour of spinning particles, such as electrons, polaritons and photons, in both real and parameter spaces. For photons resonating in a Möbius-strip cavity, the occurrence of an extra phase—known as the Berry phase—with purely topological origin is expected due to its non-trivial evolution in parameter space. However, despite numerous theoretical investigations, characterizing the optical Berry phase in a Möbius-strip cavity has remained elusive. Here we report the experimental observation of the Berry phase generated in optical Möbius-strip microcavities. In contrast to theoretical predictions in optical, electronic and magnetic Möbius-topology systems where only Berry phase π occurs, we demonstrate that a variable Berry phase smaller than π can be acquired by generating elliptical polarization of resonating light. Möbius-strip microcavities as integrable and Berry-phase-programmable optical systems are of great interest in topological physics and emerging classical or quantum photonic applications

Glass-based 1-D dielectric microcavities

We have developed a reliable RF sputtering techniques allowing to fabricate glass-based one dimensional microcavities, with high quality factor. This property is strongly related to the modification of the density of states due to the confinement of the gain medium in a photonic band gap structure. In this short review we present some of the more recent results obtained by our team exploiting these 1D microcavities. In particular we present: (1) Er3+ luminescence enhancement of the 4I13/2 → 4I15/2 transition; (2) broad band filters based on disordered 1-D photonic structures; (3) threshold defect-mode lasing action in a hybrid structure

Symmetry‐Induced Selective Excitation of Topological States in Su–Schrieffer–Heeger Waveguide Arrays

The investigation of topological state transition in carefully designed photonic lattices is of high interest for fundamental research, as well as for applied studies such as manipulating light flow in on-chip photonic systems. Herein, the topological phase transition between symmetric topological zero modes (TZM) and antisymmetric TZMs in Su–Schrieffer–Heeger mirror symmetric waveguides is reported. The transition of TZMs is realized by adjusting the coupling ratio between neighboring waveguide pairs, which is enabled by selective modulation of the refractive index in the waveguide gaps. Bidirectional topological transitions between symmetric and antisymmetric TZMs can be achieved with proposed switching strategy. Selective excitation of topological edge mode is demonstrated owing to the symmetry characteristics of the TZMs. The flexible manipulation of topological states is promising for on-chip light flow control and may spark further investigations on symmetric/antisymmetric TZM transitions in other photonic topological frameworks

Symmetry induced selective excitation of topological states in SSH waveguide arrays

The investigation of topological state transition in carefully designed photonic lattices is of high interest for fundamental research, as well as for applied studies such as manipulating light flow in on-chip photonic systems. Here, we report on topological phase transition between symmetric topological zero modes (TZM) and antisymmetric TZMs in Su-Schrieffer-Heeger (SSH) mirror symmetric waveguides. The transition of TZMs is realized by adjusting the coupling ratio between neighboring waveguide pairs, which is enabled by selective modulation of the refractive index in the waveguide gaps. Bi-directional topological transitions between symmetric and antisymmetric TZMs can be achieved with our proposed switching strategy. Selective excitation of topological edge mode is demonstrated owing to the symmetry characteristics of the TZMs. The flexible manipulation of topological states is promising for on-chip light flow control and may spark further investigations on symmetric/antisymmetric TZM transitions in other photonic topological frameworks

Coherent emission from fully Er 3+ doped monolithic 1-D dielectric microcavity fabricated by rf-sputtering

All Er3+ doped dielectric 1-D microcavity was fabricated by rf sputtering technique. The microcavity was constituted by half wave Er3+ doped SiO2 active layer inserted between two Bragg reflectors consists of ten pairs of SiO2/TiO2 layers also doped with Er3+ ions. The scanning electron microscopy was used to check the morphology of the structure. Transmission measurements confirm the third and first order cavity resonance at 530 nm and 1560 nm, respectively. The photoluminescence measurements were obtained by optically exciting at the third order cavity resonance using 514.5 nm Ar+ laser with an excitation angle of 30°. The Full Width at Half Maximum of the emission peak at 1560 nm decrease with the pump power until the spectral resolution of the detection system of ∼1.0 nm. Moreover, the emission intensity presents a non-linear behavior with the pump power and a threshold at about 24 mW was observed with saturation of the signal at above 185 mW of pump power

Nonlinear optical switching and optical limiting in colloidal CdSe quantum dots investigated by nanosecond Z-scan measurement

The semiconductor nanocrystals are found to be promising class of third order nonlinear optical materials because of quantum confinement effects. Here, we highlight the nonlinear optical switching and optical limiting of cadmium selenide (CdSe) quantum dots (QDs) using nanosecond Z-scan measurement. The intensity dependent nonlinear absorption and nonlinear refraction of CdSe QDs were investigated by applying the Z-scan technique with 532 nm, nanosecond laser pulses. At lower intensities, the nonlinear process is dominated by saturable absorption (SA) and it is changed to reverse saturable absorption (RSA) at higher intensities. The SA behaviour is attributed to the ground state bleaching and the RSA is ascribed to free carrier absorption (FCA) of CdSe QDs. The nonlinear optical switching behaviour and reverse saturable absorption makes CdSe QDs are good candidate for all-optical device and optical limiting applications