Investigation of the distribution of laser damage precursors at 1064 nm, 12 ns on Niobia-Silica and Zirconia-Silica mixtures

International audienceSimple Nb 2 O 5 , ZrO 2 , SiO 2 oxide coatings and their mixtures with SiO 2 have been prepared by the Ion Beam Sputtering (IBS) technique. The Laser-Induced Damage of these samples has been studied at 1064 nm, 12 ns. The laser induced damage threshold (LIDT) decreases in both sets of the mixtures with the volumetric fraction of high index material. We find that the nanosecond LIDT of the mixtures is related to the band gap of the material as it has been widely observed in the subpicosecond regime. The laser damage probability curves have been fitted firstly by a statistical approach, i.e. direct calculation of damage precursor density from damage probability and secondly by a thermal model based on absorption of initiator. The distributions of damage precursors versus fluence extracted from these fittings show a good agreement. The thermal model makes it possible to connect damage probability to precursor physical properties. A metallic defect with a maximum radius of 18 nm was proposed to the interpretation. The critical temperature in the laser damage process exhibited a dependence on the band-gap of the material

Optical, vibrational, thermal, electrical, damage and phase-matching properties of lithium thioindate

Lithium thioindate (LiInS$_{2}$) is a new nonlinear chalcogenide biaxial material transparent from 0.4 to 12 $\mu$m, that has been successfully grown in large sizes and good optical quality. We report on new physical properties that are relevant for laser and nonlinear optics applications. With respect to AgGaS(e)$_2$ ternary chalcopyrite materials, LiInS$_{2}$ displays a nearly-isotropic thermal expansion behavior, a 5-times larger thermal conductivity associated with high optical damage thresholds, and an extremely low intensity-dependent absorption allowing direct high-power downconversion from the near-IR to the deep mid-IR. Continuous-wave difference-frequency generation (5-11$\mu$m) of Ti:sapphire laser sources is reported for the first time.Comment: 27 pages, 21 figures. Replaces the previous preprint (physics/0307082) with the final version as it will be published in J. Opt. Soc. Am. B 21(11) (Nov. 2004 issue

Sapphire Selective Laser Etching Dependence on Radiation Wavelength and Etchant

Transparent and high-hardness materials have become the object of wide interest due to their optical and mechanical properties; most notably, concerning technical glasses and crystals. A notable example is sapphire—one of the most rigid materials having impressive mechanical stability, high melting point and a wide transparency window reaching into the UV range, together with impressive laser-induced damage thresholds. Nonetheless, using this material for 3D micro-fabrication is not straightforward due to its brittle nature. On the microscale, selective laser etching (SLE) technology is an appropriate approach for such media. Therefore, we present our research on C-cut crystalline sapphire microprocessing by using femtosecond radiation-induced SLE. Here, we demonstrate a comparison between different wavelength radiation (1030 nm, 515 nm, 343 nm) usage for material modification and various etchants (hydrofluoric acid, sodium hydroxide, potassium hydroxide and sulphuric and phosphoric acid mixture) comparison. Due to the inability to etch crystalline sapphire, regular SLE etchants, such as hydrofluoric acid or potassium hydroxide, have limited adoption in sapphire selective laser etching. Meanwhile, a 78% sulphuric and 22% phosphoric acid mixture at 270 °C temperature is a good alternative for this process. We present the changes in the material after the separate processing steps. After comparing different processing protocols, the perspective is demonstrated for sapphire structure formation