Dynamic spin-current generation in hybrid structures by sound wave

We have developed the theory of spin transport transverse to the interface in metal/ferromagnetic insulator hybrid structures under the spin Seebeck effect conditions. We have calculated the deviation of the conduction electrons spin temperature from equilibrium under conditions of saturation of resonance interaction between the electrons and a sound wave field. We have demonstrated that the conduction electrons spin subsystem, when excited under the above conditions, generates a spin-wave current in a nonconducting ferromagnetic of the metal/ferromagnetic insulator hybrid structure being in a nonuniform temperature field. In addition, the spin-wave current generation in the ferromagnetic has a resonance nature. We have analyzed the approximation of effective parameters, when each of the considered subsystems (conduction electrons, magnons, and phonons) is characterized by its effective temperature

Analysis of diffraction efficiency of phase gratings in dependence of duty cycle and depth

The analysis of dependence of diffraction efficiency on duty cycle and modulation depth of phase gratings with rectangular and Gaussian profile was performed by means of specially designed program. An Angular Spectrum method applied for monochromatic light propagation in far field through phase grating was used for calculation of diffraction efficiency of gratings. Diffraction efficiency maps of 0-5th diffraction orders were obtained for different grating profiles. It is shown that changing the duty cycle of grating makes it possible to tune smoothly the diffraction efficiency and to redirect the light intensity in required orders

Planar SFS Josephson Junctions Made by Focused Ion Beam Etching

Superconductor-Ferromagnet-Superconductor (S-F-S) Josephson junctions were fabricated by making a narrow cut through a S-F double layer using direct writing by Focused Ion Beam (FIB). Due to a high resolution (spot size smaller than 10 nm) of FIB, junctions with a small separation between superconducting electrodes ($\leq$ 30 nm) can be made. Such a short distance is sufficient for achieving a considerable proximity coupling through a diluted CuNi ferromagnet. We have successfully fabricated and studied S-F-S (Nb-CuNi-Nb) and S-S'-S (Nb-Nb/CuNi-Nb) junctions. Junctions exhibit clear Fraunhofer modulation of the critical current as a function of magnetic field, indicating good uniformity of the cut. By changing the depth of the cut, junctions with the $I_c R_n$ product ranging from 0.5 mV to $\sim 1\mu$V were fabricated.Comment: 5 pages, 5 figures, presentation at EUCAS-2003, to be published in Physica

Interplay of magnetization dynamics with a microwave waveguide at cryogenic temperatures

In this work, magnetization dynamics is studied at low temperatures in a hybrid system that consists of a thin epitaxial magnetic film coupled with a superconducting planar microwave waveguide. The resonance spectrum was observed over a wide magnetic field range, including low fields below the saturation magnetization and both polarities. Analysis of the spectrum via a fitting routine we develop allows the derivation of all magnetic parameters of the film at cryogenic temperatures, the detection of waveguide-induced uniaxial magnetic anisotropies of the first and the second order, and the uncovering of a minor misalignment of the magnetic field. A substantial influence of the superconducting critical state on the resonance spectrum is observed and discussed

Impact of the carrier relaxation paths on two-state operation in quantum dot lasers

We study InGaAs QD laser operating simultaneously at ground (GS) and excited (ES) states under 30ns pulsed-pumping and distinguish three regimes of operation depending on the pump current and the carrier relaxation pathways. An increased current leads to an increase in ES intensity and to a decrease in GS intensity (or saturation) for low pump range, as typical for the cascade-like pathway. Both the GS and ES intensities are steadily increased for high current ranges, which prove the dominance of the direct capture pathway. The relaxation oscillations are not pronounced for these ranges. For the mediate currents, the interplay between the both pathways leads to the damped large amplitude relaxation oscillations with significant deviation of the relaxation oscillation frequency from the initial value during the pulse

The effect of slow passage in the pulse-pumped quantum dot laser

In recent years, quantum-dot (QD) semiconductor lasers attract significant interest in many practical applications due to their advantages such as high-power pulse generation because to the high gain efficiency. In this work, the pulse shape of an electrically pumped QD-laser under high current is analyzed. We find that the slow rise time of the pulsed pump may significantly affect the high intensity output pulse. It results in sharp power dropouts and deformation of the pulse profile. We address the effect to dynamical change of the phase-amplitude coupling in the proximity of the excited state (ES) threshold. Under 30ns pulse pumping, the output pulse shape strongly depends on pumping amplitude. At lower currents, which correspond to lasing in the ground state (GS), the pulse shape mimics that of the pump pulse. However, at higher currents the pulse shape becomes progressively unstable. The instability is greatest when in proximity to the secondary threshold which corresponds to the beginning of the ES lasing. After the slow rise stage, the output power sharply drops out. It is followed by a long-time power-off stage and large-scale amplitude fluctuations. We explain these observations by the dynamical change of the alpha-factor in the QD-laser and reveal the role of the slowly rising pumping processes in the pulse shaping and power dropouts at higher currents. The modeling is in very good agreement with the experimental observations

Slow passage through thresholds in quantum dot lasers

A turn on of a quantum dot (QD) semiconductor laser simultaneously operating at the ground state (GS) and excited state (ES) is investigated both experimentally and theoretically. We find experimentally that the slow passage through the two successive laser thresholds may lead to significant delays in the GS and ES turn ons. The difference between the turn-on times is measured as a function of the pump rate of change and reveals no clear power law. This has motivated a detailed analysis of rate equations appropriate for two-state lasing QD lasers. We find that the effective time of the GS turn on follows an -1/2 power law provided that the rate of change is not too small. The effective time of the ES transition follows an -1 power law, but its first order correction in ln is numerically significant. The two turn ons result from different physical mechanisms. The delay of the GS transition strongly depends on the slow growth of the dot population, whereas the ES transition only depends on the time needed to leave a repellent steady state

Dropout dynamics in pulsed quantum dot lasers due to mode jumping

We examine the response of a pulse pumped quantum dot laser both experimentally and numerically. As the maximum of the pump pulse comes closer to the excited-state threshold, the output pulse shape becomes unstable and leads to dropouts. We conjecture that these instabilities result from an increase of the linewidth enhancement factor α as the pump parameter comes close to the excitated state threshold. In order to analyze the dynamical mechanism of the dropout, we consider two cases for which the laser exhibits either a jump to a different single mode or a jump to fast intensity oscillations. The origin of these two instabilities is clarified by a combined analytical and numerical bifurcation diagram of the steady state intensity modes

Perturbation-induced radiation by the Ablowitz-Ladik soliton

An efficient formalism is elaborated to analytically describe dynamics of the Ablowitz-Ladik soliton in the presence of perturbations. This formalism is based on using the Riemann-Hilbert problem and provides the means of calculating evolution of the discrete soliton parameters, as well as shape distortion and perturbation-induced radiation effects. As an example, soliton characteristics are calculated for linear damping and quintic perturbations.Comment: 13 pages, 4 figures, Phys. Rev. E (in press

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the 44−59 GHz (first harmonic) and 101−104 GHz (second harmonic) frequency ranges. For both harmonics, the power output of the Gunn diodes grown on porous substrates was shown to be from 20 to 30 % higher than those grown on the flat ones