The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures

In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide have been studied using the modular data acquisition setup for capacitance-voltage measurements. The memory window formation and memory window retention experimental methods were used with the aim to study the trapping/emission processes inside the dielectric layer of MOS capacitor memory within the defined range of elevated temperatures. The trap activation energy and charge localization were determined from measured temperature dependences of charge retention. The electric field dependence of the activation energy with subsequent charge emission law have been determined

Full Counting Statistics of Charge Transfer in Coulomb Blockade Systems

Full counting statistics (FCS) of charge transfer in mesoscopic systems has recently become a subject of significant interest, since it proves to reveal an important information about the system which can be hardly assessed by other means. While the previous research mostly addressed the FCS of non- interacting systems, the present paper deals with the FCS in the limit of strong interaction. In this Coulomb blockade limit the electron dynamics is known to be governed by a master equation. We develop a general scheme to evaluate the FCS in such case, this being the main result of the work presented. We illustrate the scheme, by applying it to concrete systems. For generic case of a single resonant level we establish the equivalence of scattering and master equation approach to FCS. Further we study a single Coulomb blockade island with two and three leads attached and compare the FCS in this case with our recent results concerning an open dot either with two and three terminals. We demonstrate that Coulomb interaction suppresses the relative probabilities of large current fluctuations.Comment: 17 pages, 16 figure

Динамика информационных нагрузок в школе и психофункциональное развитие детей столичного мегаполиса

In article there are studying of dynamics of information loadings in school and level of psycho-functional development of children of the capital megalopolis are given. It is shown that different forms of school training (traditional, gymnasia and lycee classes) have different impact on cognitive and psycho physiological indicators of the Moscow schoolboys.Приводятся результаты изучения динамики информационных нагрузок в школе и уровня психофункционального развития детей столичного мегаполиса. Показано, что разные формы школьного обучения (традиционные, гимназические и лицейские классы) оказывают разное воздействие на когнитивные и психофизиологические показатели московских школьников

Subcarrier Wave Quantum Key Distribution in Telecommunication Network with Bitrate 800 kbit/s

In the course of work on creating the first quantum communication network in Russia we demonstrated quantum key distribution in metropolitan optical network infrastructure. A single-pass subcarrier wave quantum cryptography scheme was used in the experiments. BB84 protocol with strong reference was chosen for performing key distribution. The registered sifted key rate in an optical cable with 1.5 dB loss was 800 Kbit/s. Signal visibility exceeded 98%, and quantum bit error rate value was 1%. The achieved result is a record for this type of systems

Proximity-induced transport in hybrid mesoscopic normal-superconducting metal structures

Using an approach based on quasiclassical Green's functions we present a theoretical study of transport in mesoscopic S/N structures in the diffusive limit. The subgap conductance in S/N structures with barriers (zero bias and finite bias anomalies) are discused. We also analyse the temperature dependence of the conductance variation $\delta S(T)$ for a Andreev interferometer. We show that besides the well know low temperature maximum a second maximum near $T_c$ may appear. We present the results of studies on the Josephson effect in 4 terminal S/N/S contacts and on the possible sign reversal of the Josephson critical current.Comment: 8 pages, 5 figures, with added refrence

Mesoscopic fluctuations of Coulomb drag between quasi-ballistic 1D-wires

Quasiballistic 1D quantum wires are known to have a conductance of the order of 2e^2/h, with small sample-to-sample fluctuations. We present a study of the transconductance G_12 of two Coulomb-coupled quasiballistic wires, i.e., we consider the Coulomb drag geometry. We show that the fluctuations in G_12 differ dramatically from those of the diagonal conductance G_ii: the fluctuations are large, and can even exceed the mean value, thus implying a possible reversal of the induced drag current. We report extensive numerical simulations elucidating the fluctuations, both for correlated and uncorrelated disorder. We also present analytic arguments, which fully account for the trends observed numerically.Comment: 10 pages including 7 figures. Minor changes according to referee report. Accepted for PR

On minimal affinizations of representations of quantum groups

In this paper we study minimal affinizations of representations of quantum groups (generalizations of Kirillov-Reshetikhin modules of quantum affine algebras introduced by Chari). We prove that all minimal affinizations in types A, B, G are special in the sense of monomials. Although this property is not satisfied in general, we also prove an analog property for a large class of minimal affinization in types C, D, F. As an application, the Frenkel-Mukhin algorithm works for these modules. For minimal affinizations of type A, B we prove the thin property (the l-weight spaces are of dimension 1) and a conjecture of Nakai-Nakanishi (already known for type A). The proof of the special property is extended uniformly for more general quantum affinizations of quantum Kac-Moody algebras.Comment: 38 pages; references and additional results added. Accepted for publication in Communications in Mathematical Physic

Superconducting proximity effect in clean ferromagnetic layers

We investigate superconducting proximity effect in clean ferromagnetic layers with rough boundaries. The subgap density of states is formed by Andreev bound states at energies which depend on trajectory length and the ferromagnetic exchange field. At energies above the gap, the spectrum is governed by resonant scattering states. The resulting density of states, measurable by tunneling spectroscopy, exhibits a rich structure, which allows to connect the theoretical parameters from experiments.Comment: 11 pages, 5 figures (included

Conductance renormalization and conductivity of a multi-subband Tomonaga-Luttinger model

We studied the conductance renormalization and conductivity of multi-subband Tomonaga-Luttinger models with inter-subband interactions. We found that, as in single-band systems, the conductance of a multi-subband system with an arbitrary number of subbands is not renormalized due to interaction between electrons. We derived a formula for the conductivity in multi-subband models. We applied it to a simplified case and found that inter-subband interaction enhances the conductivity, which is contrary to the intra-subband repulsive interaction, and that the conductivity is further enhanced for a larger number of subbands.Comment: 12 pages, no figures. to be published in Physical Review B as a brief repor

Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties

Exploiting CVD technique for carbon deposition from C₂H₂+H₂+N₂ mixture, a graphene-like film synthesized directly on SiO₂ surface of SiO₂-Si structure was obtained. The graphene-like film was grown under thin Ni layer that is easy exfoliated from graphene-SiO₂-Si structure. Surface of the film was sufficiently smooth and reveals no winkles and holes; it has a good homogeneity and perfect adhesion to SiO₂ layer. Studying the micro-Raman spectra showed a graphene-like structure of the film; using atomic force microscopic technique, the thickness of film was determined (0.6 nm). Using spectroscopic ellipsometry and simple Cauchy model enabled us to estimate optical parameters of this graphene-like film