Mechanism of Oxygen Redistribution During Ultra-shallow Junction Formation in Silicon

The transport of dissolved oxygen in the Czochralski silicon towards the arsenic-doped ultra-shallow junction was investigated. Ultra-shallow junction was formed by low-energy As+ ion implantation with the subsequent furnace annealing at 750 C-950 C temperatures for the dopant activation. Oxygen and arse-nic redistributions were investigated by secondary ion mass spectrometry (SIMS) technique. The peculiari-ties of defect creation and transformation were studied by the X-ray diffuse scattering technique (XDS). It was found that oxygen concentration in the arsenic redistribution region is increased a few times already after 1 minute of annealing. Increase of annealing time leads to decrease of oxygen accumulation as a re-sult of oxygen transportation to the SiO2/Si interface. As a result the thickness of screen silicon oxide is in-creased by 0.5 nm. This effect is related with the oxygen gettering from the wafer bulk. A physical mecha-nism of the oxygen transfer is discussed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3527

Electrical properties of MIS structures with silicon nanoclusters

The theoretical and experimental investigations of electrical properties of the Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO₂-( − ncsSi )-SiO₂-Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between − ncsSi and SiO₂ were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics

Activation of porous Si blue emission due to preanodization ion implantation

Implantation of B⁺, N⁺, and B⁺+N⁺ ions into initial silicon wafers was carried out before anodization process. The results of photoluminescent (PL) study of porous Si samples prepared on B⁺ or N⁺ implanted wafers show a decrease in the photoluminescence intensity when compared with the initial porous Si. In contrast to this, the B⁺+ N⁺ double doped samples show the increasing of the photoluminescence intensity. This effect can be explained by donor-acceptor pairs formation, and, as a result, the new recombination-active radiative channel creation. Rapid thermal annealing (RTA) treatment leads to significant decrease of PL intensity in the longwave spectral range for initial sample and samples prepared on implanted substrates. Furthermore, RTA treatments leads to the activation of the porous Si high-energy PL formed on the B⁺ implanted wafers

COVID-19 and sepsis: clinical parallels of clinical course and treatment options

The article analyzes syndrome complex in sepsis and severe COVID-19, identifies the main pathophysiological priorities in the diagnosis and differences in treatment. Adaptation of existing treatment regimens for diseases with similar pathogenesis may help to improve treatment outcomes and reduce SARS-CoV-2-related mortality. However, when discussing the parallels between COVID-19 and sepsis, focusing on their similarities in immunopathogenesis and pathophysiology, the proposed treatment options should be reviewed based on the patient’s clinical assessment and laboratory parameters individually