The transport of dissolved oxygen in the Czochralski silicon towards the arsenic-doped ultra-shallow junction was investigated. Ultra-shallow junction was formed by low-energy As+ ion implantation with the subsequent furnace annealing at 750 C-950 C temperatures for the dopant activation. Oxygen and arse-nic redistributions were investigated by secondary ion mass spectrometry (SIMS) technique. The peculiari-ties of defect creation and transformation were studied by the X-ray diffuse scattering technique (XDS). It was found that oxygen concentration in the arsenic redistribution region is increased a few times already after 1 minute of annealing. Increase of annealing time leads to decrease of oxygen accumulation as a re-sult of oxygen transportation to the SiO2/Si interface. As a result the thickness of screen silicon oxide is in-creased by 0.5 nm. This effect is related with the oxygen gettering from the wafer bulk. A physical mecha-nism of the oxygen transfer is discussed.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3527

Gamov, D.V.

Gudymenko, O.Yo.

Klad’ko, V.P.

Litovchenko, V.G.

Melnik, V.P.

Oberemok, O.S.

Popov, V.G.

Romanyuk, B.M.

SocioEconomic Challenges Journal (Sumy State University)

PROCEEDINGS OF THE INTERNATIONAL CONFERENCE  
NANOMATERIALS: APPLICATIONS AND PROPERTIES 
Vol. 2 No 1, 01PCSI14(3pp) (2013) 
 
 
2304-1862/2013/2(1)01PCSI14(3) 01PCSI14-1  2013 Sumy State University 
Mechanism of Oxygen Redistribution During Ultra-shallow Junction Formation in Silicon 
 
O.S. Oberemok*, D.V. Gamov, V.G. Litovchenko, B.M. Romanyuk, V.P. Melnik, V.P. Klad’ko, 
V.G. Popov, O.Yo. Gudymenko 
 
Lashkaryov Institute of Semiconductors Physics NAS Ukraine, 41, Prospekt Nauky Str., 03028  Kyiv, Ukraine 
 
(Received 06 June 2013; published online 01 September 2013) 
 
The transport of dissolved oxygen in the Czochralski silicon towards the arsenic-doped ultra-shallow 
junction was investigated. Ultra-shallow junction was formed by low-energy As+ ion implantation with the 
subsequent furnace annealing at 750 C-950 C temperatures for the dopant activation. Oxygen and arse-
nic redistributions were investigated by secondary ion mass spectrometry (SIMS) technique. The peculiari-
ties of defect creation and transformation were studied by the X-ray diffuse scattering technique (XDS). It 
was found that oxygen concentration in the arsenic redistribution region is increased a few times already 
after 1 minute of annealing. Increase of annealing time leads to decrease of oxygen accumulation as a re-
sult of oxygen transportation to the SiO2/Si interface. As a result the thickness of screen silicon oxide is in-
creased by 0.5 nm. This effect is related with the oxygen gettering from the wafer bulk.  A physical mecha-
nism of the oxygen transfer is discussed. 
 
Keywords: Ion implantation, Interface, Arsenic, Oxygen, Junction, Diffusion, Gettering, SiO2, SIMS, XDS. 
 
 PACS numbers: 68.55.Ln, 68.35.Fx 
 
 
                                                        
* ober@isp.kiev.ua 
1. INTRODUCTION 
 
The dimension scaling of metal-oxide-semiconductor 
field effect transistors (MOSFETS) requires the ultra-
shallow p-n junctions in the source/drain extensions for 
the suppression of short channel effects. One of the crea-
tion methods of such junctions is a high-dose low-energy 
implantation of arsenic ions in the Czochralski (Cz) sili-
con wafer with the subsequent high-temperature anneal-
ing. However, the USJ formation is complicated by the 
dopant deactivation, accumulation at the SiO2-Si inter-
face [1], and transient-enhanced diffusion (TED) as re-
sult of interaction with point defects [2]. Rousseau et al. 
[3] are shown that arsenic deactivation is a result of 
AsnV (n  2,3,4) cluster (where V – vacancy) formation 
with the injection of self-interstitial (I) in the silicon 
bulk. Also it was found that As TED is explained by both 
vacancy- and interstitial - mediated As diffusions. The 
presence of dissolved oxygen in Cz-silicon wafers also 
plays a significant role in the processing of integrated 
circuits. It is known that the diffusion – mediated oxygen 
precipitation in silicon leads to the formation of extended 
defects and metal gettering that are responsible for 
leakage currents [4,5]. Also the oxygen can form thermal 
donors due to the clustering of several oxygen atoms [6]. 
The oxygen precipitation is strongly dependent on the 
presence of vacancies generated by ion implantation and 
the existing mechanical stresses at different thermal 
treatment. Oxygen is rapidly gettered into residual 
damage regions, forming stable SiOx precipitates during 
annealing [7]. In the heavily As-doped Si the oxygen pre-
cipitation is retarded. That is related with reduced oxy-
gen diffusion at the increase of arsenic concentration [8]. 
It was proposed the reduced oxygen diffusion is connect-
ed with O-As-V complex where V surrounded by one at-
om of arsenic, one atom of oxygen and several silicon 
atoms [9]. Investigations of the oxygen behaviour near of 
the As USJ are shown that the significant amount of 
oxygen is gettered from the silicon bulk by the arsenic- 
implanted region at the annelings [10]. That leads to 
the increase of screening silicon oxide thickness and 
uncontrolled accumulation of oxygen in the USJ region 
at the different thermal budgets. 
The lattice structural defects and oxygen redistribu-
tions around the arsenic-doped ultra-shallow junction 
were studied to understand the physical mechanism 
underlying the transport of oxygen from the silicon 
bulk to the arsenic implanted region. 
 
2. EXPERIMENT 
 
All the experiments were performed on 100-oriented 
p-type 10 Ohm×cm silicon wafers. The samples were 
implanted through the 2.2 nm screen oxide by As ions 
with a dose of 4×1014 cm-2 and energy of 5 keV. Furnace 
annealing of the as implanted samples was carried out 
at the temperature range of 750 C-950 C (the stand-
ard temperatures for activation annealing) in nitrogen 
ambient for 0.5 to 20 minutes. Analysis of the dopant 
depth profiles was performed by secondary ion mass 
spectrometry (SIMS) method by Cameca IMS 4F in-
strument. Cs+ primary ion beam with the energy of 1 
keV was used for secondary ion generation. The sput-
tering rate was approximately 0.5 nm/s.  The depth 
scale was determined for each profile by measuring the 
crater depth with a Dektak 3030 profilometer. Peculiar-
ities of defect creation and transformation were carried 
out using the X-ray diffuse scattering (XDS) technique 
with the high-resolution diffractometer PANalytical 
X’Pert Pro MRD. The method for the determination of 
the defect concentration consists in finding the Huang 
and thermo-diffuse scattering ratio, excepting influence 
of the scattering layer thickness, structure amplitude, 
spatial angle of scattering, and Debye-Waller factor. So, 
such important parameters as the micro-defect sym-
metry, dimension, and concentration may be directly 
determined from experimental data according to diffuse 
scattering observed in the investigated sample. 
 O.S. OBEREMOK, D.V.  GAMOV, V.G. LYTOVCHENKO, ET AL. PROC. NAP 2, 01PCSI14 (2013) 
 
 
01PCSI14-2 
3. RESULTS AND DISCUSSION  
 
Fig. 1 shows the time dependences of the relative 
oxygen concentration in the USJ region (10-50 nm) af-
ter furnace annealing at two temperatures: 750 C and 
9500C. It can be seen that after 1 min. annealing oxy-
gen concentration in the USJ region increase by 6 
times (750 C) and by 3 times (950 C) for arsenic-
implanted samples. The longer annealing time leads to 
decrease of the accumulated oxygen concentration and 
to increase the screen silicon oxide thickness as shown 
in previous our paper [10]. 
 
 
Fig. 1 – Time dependence of the relative oxygen concentration 
in the USJ region (10 – 50 nm) after furnace annealing 
 
The obtained data confirm that at the USJ for-
mation the process of the volume-dissolved oxygen en-
hanced diffusion to the implanted surface takes place. 
Fig. 2 shows the arsenic depth profiles evolution for 
implanted samples at the furnace annealing at 750 C. 
The noticeable arsenic redistribution towards the sur-
face and the sample depth occurs for the annealing 
time interval of 5 to 20 min.  
 
0 5 10 15 20 25 30
1x10
3
2x10
3
3x10
3
4x10
3
 
 
  As implanted
 750
0
C, 1 min
 750
0
C, 5 min
 750
0
C, 20 min
A
s
 i
n
te
n
s
it
y
, 
a
.u
.
Depth,nm  
 
Fig. 2 – SIMS arsenic depth profiles before and after furnace 
annealing at 750 C for different times 
 
Fig.3 shows the normalized intensities I(q) of XDS 
curves for the arsenic - implanted samples before and 
after annealing at the temperature of 750 C-950 C for 
5 min. The shapes of curves indicates that all the sam-
ples have the defects both of vacancy (qz < 0), and in-
terstitial (qz > 0) type, where qz is reciprocal lattice vec-
tor. Defect concentrations of both types are increased 
after annealing at 750 C. Moreover the sizes of vacan-
cy type defects are increased but the sizes of interstitial 
type are decreased. After annealing at the temperature 
of 950 C the vacancy defects almost disappear but the 
 
 
Fig. 2 – Dependence of the normalized intensity I(q) on qz 
vector: for as implanted sample and after annealing. 
 
concentration of interstitial defects are increased. It 
is known that the amorphous/crystalline interface, 
{311} rodlike and EOR defects disappear instantly after 
annealing at the temperature of 700 C for the high-
dose low-energy arsenic implantation (< 10 keV) in the 
silicon [11]. The SiO2/Si interface acts as a strong inter-
stitial sink, absorbing the interstitials released from 
the defects during the Ostwald ripening process. This 
significantly reduces the amount of silicon self-
interstitial atoms in the depth. Obviously only the ar-
senic clustering (AsnV) creates a some amount of self-
interstitial defects in silicon. In this case the arsenic 
enhanced diffusion is weakly related with the silicon 
interstitials. We suppose that the increase of vacancy 
and interstitial shoulder on a XDS curve after anneal-
ing at temperature 750 C is connected only with the 
generation and transferring of AsV and As2V complexes 
(TED) into the silicon depth. In this case the oxygen 
diffusion toward the arsenic distribution region can be 
performed according to the reaction AsV+O  As+VO, 
where VO is a mobile vacancy-oxygen complex. Also it 
can lead to the VO2 complex formation. The interaction 
of VO2 and VO complexes with a self-interstitial silicon 
atom leads to the formation of mobile O2 complex and 
interstitial oxygen Oi. The interstitial oxygen and oxy-
gen complexes will diffuse towards the source of vacan-
cies. Since the arsenic stressed silicon lattice will be 
stretched and generate the arsenic – vacancy complex-
es during the annealing the oxygen precipitation is 
suppressed [8]. The process will continue until the lat-
tice stress compensation. At the same time the arsenic 
segregation (with the accumulated oxygen) at the 
SiO2/Si interface will lead to the additional oxidation of 
the silicon surface. 
 
 
 MECHANISM OF OXYGEN REDISTRIBUTION DURING ULTRA… PROC. NAP 2, 01PCSI14 (2013) 
 
 
01PCSI14-3 
4. CONCLUSION 
 
The quantitative characteristics of oxygen accumu-
lation and defect structure of the silicon lattice during 
the USJ formation were studied. The physical mecha-
nism of the oxygen transfer from the silicon bulk to-
ward the USJ region is proposed. The mechanism in-
volves the interaction of oxygen with point defects in 
the field of mechanical stresses. 
Oxygen is gettered by arsenic implanted region due 
to the mechanical stress gradient. At the increase of 
the annealing time the one part of arsenic atoms is sit-
ed at the crystal lattice sites. The other part is accumu-
lated at the SiO2/Si interface. Arsenic redistribution 
leads to decrease of the mechanical stress. The result is 
that the flow of oxygen is reduced. Part of oxygen atoms 
respond to the surface oxide layer formation. The in-
creasing of annealing temperature leads to decrease of 
the mechanical stress gradient and consequently the 
quantity of gettered oxygen. In this case the gettering 
process is effective during the first 5-10 s. Thus the 
USJ formation using low-energy ion implantation is 
followed by an increase of oxygen concentration in the 
arsenic distribution region. With increasing of anneal-
ing temperature from 750 C to 950 C accumulated 
oxygen concentration at the arsenic distribution region 
decreases. 
 
 
REFERENCES 
 
1. D. Kruger, H. Rucker, B. Heinemann, V. Melnik, R. Kurps, 
D. Bolze, J. Vac. Sci. Technol. 22 No1, 455 (2004). 
2. H. Rucker, B. Heinemann, R. Barth, D. Bolze, V. Melnik, 
R. Kurps, and D. Kruger, Appl. Phys. Lett. 82 No 5, 826 
(2003). 
3. P.M. Rousseau, P.B. Griffin, W.T. Fang, J.D. Plummer, J. 
Appl. Phys. 84, 3593 (1998). 
4. H. Shirai, A. Yamaguchi, F. Shimura, Appl. Phys. Lett. 54, 
1748 (1996). 
5. R. Falster, G.R. Fisher, G. Ferrero, Appl. Phys. Lett. 59, 
809 (1991). 
6. J. Michel, L. C. Kimmerling, Semiconductors and Semi-
metals 42, 251 (Academic Press, 1994). 
7. T. J. Magee, C. Leung, H. Kawayoshi, L. J. Palkuti, B. K. 
Furman, C. A. Evans, L. A. Christel, J. F. Gibbons, and  
D. S. Day, Appl. Phys. Lett. 39, 564 (1981). 
8. Y. Zhao, D. Li, X. Ma, D. Yang, J. Phys.: Condens. Matter 
16, 1539 (2004). 
9. G.-H. Lu, Q. Wang, F. Liu, Appl. Phys. Lett. 92, 211906 
(2008). 
10. O.S. Oberemok, V.G. Lytovchenko, V.P. Melnyuk, O.Yo. 
Gudymenko, Proc. NAP 1, 03PCSI13 (2012). 
11. M. Tamura, Y. Hiroyama, A. Nishida, Ion Implantation 
Technology Proceedings, 1998 International Conference on, 
2, 744 (1999). 
 


Mechanism of Oxygen Redistribution During Ultra-shallow Junction Formation in Silicon

Electronic Sumy State University Institutional Repository

PROCEEDINGS OF THE INTERNATIONAL CONFERENCE  NANOMATERIALS: APPLICATIONS AND PROPERTIES Vol. 2 No 1, 01PCSI14(3pp) (2013)   2304-1862/2013/2(1)01PCSI14(3) 01PCSI14-1  2013 Sumy State University Mechanism of Oxygen Redistribution During Ultra-shallow Junction Formation in Silicon  O.S. Oberemok*, D.V. Gamov, V.G. Litovchenko, B.M. Romanyuk, V.P. Melnik, V.P. Klad’ko, V.G. Popov, O.Yo. Gudymenko  Lashkaryov Institute of Semiconductors Physics NAS Ukraine, 41, Prospekt Nauky Str., 03028  Kyiv, Ukraine  (Received 06 June 2013; published online 01 September 2013)  The transport of dissolved oxygen in the Czochralski silicon towards the arsenic-doped ultra-shallow junction was investigated. Ultra-shallow junction was formed by low-energy As+ ion implantation with the subsequent furnace annealing at 750 C-950 C temperatures for the dopant activation. Oxygen and arse-nic redistributions were investigated by secondary ion mass spectrometry (SIMS) technique. The peculiari-ties of defect creation and transformation were studied by the X-ray diffuse scattering technique (XDS). It was found that oxygen concentration in the arsenic redistribution region is increased a few times already after 1 minute of annealing. Increase of annealing time leads to decrease of oxygen accumulation as a re-sult of oxygen transportation to the SiO2/Si interface. As a result the thickness of screen silicon oxide is in-creased by 0.5 nm. This effect is related with the oxygen gettering from the wafer bulk.  A physical mecha-nism of the oxygen transfer is discussed.  Keywords: Ion implantation, Interface, Arsenic, Oxygen, Junction, Diffusion, Gettering, SiO2, SIMS, XDS.   PACS numbers: 68.55.Ln, 68.35.Fx                                                           * ober@isp.kiev.ua 1. INTRODUCTION  The dimension scaling of metal-oxide-semiconductor field effect transistors (MOSFETS) requires the ultra-shallow p-n junctions in the source/drain extensions for the suppression of short channel effects. One of the crea-tion methods of such junctions is a high-dose low-energy implantation of arsenic ions in the Czochralski (Cz) sili-con wafer with the subsequent high-temperature anneal-ing. However, the USJ formation is complicated by the dopant deactivation, accumulation at the SiO2-Si inter-face [1], and transient-enhanced diffusion (TED) as re-sult of interaction with point defects [2]. Rousseau et al. [3] are shown that arsenic deactivation is a result of AsnV (n  2,3,4) cluster (where V – vacancy) formation with the injection of self-interstitial (I) in the silicon bulk. Also it was found that As TED is explained by both vacancy- and interstitial - mediated As diffusions. The presence of dissolved oxygen in Cz-silicon wafers also plays a significant role in the processing of integrated circuits. It is known that the diffusion – mediated oxygen precipitation in silicon leads to the formation of extended defects and metal gettering that are responsible for leakage currents [4,5]. Also the oxygen can form thermal donors due to the clustering of several oxygen atoms [6]. The oxygen precipitation is strongly dependent on the presence of vacancies generated by ion implantation and the existing mechanical stresses at different thermal treatment. Oxygen is rapidly gettered into residual damage regions, forming stable SiOx precipitates during annealing [7]. In the heavily As-doped Si the oxygen pre-cipitation is retarded. That is related with reduced oxy-gen diffusion at the increase of arsenic concentration [8]. It was proposed the reduced oxygen diffusion is connect-ed with O-As-V complex where V surrounded by one at-om of arsenic, one atom of oxygen and several silicon atoms [9]. Investigations of the oxygen behaviour near of the As USJ are shown that the significant amount of oxygen is gettered from the silicon bulk by the arsenic- implanted region at the annelings [10]. That leads to the increase of screening silicon oxide thickness and uncontrolled accumulation of oxygen in the USJ region at the different thermal budgets. The lattice structural defects and oxygen redistribu-tions around the arsenic-doped ultra-shallow junction were studied to understand the physical mechanism underlying the transport of oxygen from the silicon bulk to the arsenic implanted region.  2. EXPERIMENT  All the experiments were performed on 100-oriented p-type 10 Ohm×cm silicon wafers. The samples were implanted through the 2.2 nm screen oxide by As ions with a dose of 4×1014 cm-2 and energy of 5 keV. Furnace annealing of the as implanted samples was carried out at the temperature range of 750 C-950 C (the stand-ard temperatures for activation annealing) in nitrogen ambient for 0.5 to 20 minutes. Analysis of the dopant depth profiles was performed by secondary ion mass spectrometry (SIMS) method by Cameca IMS 4F in-strument. Cs+ primary ion beam with the energy of 1 keV was used for secondary ion generation. The sput-tering rate was approximately 0.5 nm/s.  The depth scale was determined for each profile by measuring the crater depth with a Dektak 3030 profilometer. Peculiar-ities of defect creation and transformation were carried out using the X-ray diffuse scattering (XDS) technique with the high-resolution diffractometer PANalytical X’Pert Pro MRD. The method for the determination of the defect concentration consists in finding the Huang and thermo-diffuse scattering ratio, excepting influence of the scattering layer thickness, structure amplitude, spatial angle of scattering, and Debye-Waller factor. So, such important parameters as the micro-defect sym-metry, dimension, and concentration may be directly determined from experimental data according to diffuse scattering observed in the investigated sample.  O.S. OBEREMOK, D.V.  GAMOV, V.G. LYTOVCHENKO, ET AL. PROC. NAP 2, 01PCSI14 (2013)   01PCSI14-2 3. RESULTS AND DISCUSSION   Fig. 1 shows the time dependences of the relative oxygen concentration in the USJ region (10-50 nm) af-ter furnace annealing at two temperatures: 750 C and 9500C. It can be seen that after 1 min. annealing oxy-gen concentration in the USJ region increase by 6 times (750 C) and by 3 times (950 C) for arsenic-implanted samples. The longer annealing time leads to decrease of the accumulated oxygen concentration and to increase the screen silicon oxide thickness as shown in previous our paper [10].   Fig. 1 – Time dependence of the relative oxygen concentration in the USJ region (10 – 50 nm) after furnace annealing  The obtained data confirm that at the USJ for-mation the process of the volume-dissolved oxygen en-hanced diffusion to the implanted surface takes place. Fig. 2 shows the arsenic depth profiles evolution for implanted samples at the furnace annealing at 750 C. The noticeable arsenic redistribution towards the sur-face and the sample depth occurs for the annealing time interval of 5 to 20 min.   0 5 10 15 20 25 301x1032x1033x1034x103    As implanted 7500C, 1 min 7500C, 5 min 7500C, 20 minAs intensity, a.u.Depth,nm   Fig. 2 – SIMS arsenic depth profiles before and after furnace annealing at 750 C for different times  Fig.3 shows the normalized intensities I(q) of XDS curves for the arsenic - implanted samples before and after annealing at the temperature of 750 C-950 C for 5 min. The shapes of curves indicates that all the sam-ples have the defects both of vacancy (qz < 0), and in-terstitial (qz > 0) type, where qz is reciprocal lattice vec-tor. Defect concentrations of both types are increased after annealing at 750 C. Moreover the sizes of vacan-cy type defects are increased but the sizes of interstitial type are decreased. After annealing at the temperature of 950 C the vacancy defects almost disappear but the   Fig. 2 – Dependence of the normalized intensity I(q) on qz vector: for as implanted sample and after annealing.  concentration of interstitial defects are increased. It is known that the amorphous/crystalline interface, {311} rodlike and EOR defects disappear instantly after annealing at the temperature of 700 C for the high-dose low-energy arsenic implantation (< 10 keV) in the silicon [11]. The SiO2/Si interface acts as a strong inter-stitial sink, absorbing the interstitials released from the defects during the Ostwald ripening process. This significantly reduces the amount of silicon self-interstitial atoms in the depth. Obviously only the ar-senic clustering (AsnV) creates a some amount of self-interstitial defects in silicon. In this case the arsenic enhanced diffusion is weakly related with the silicon interstitials. We suppose that the increase of vacancy and interstitial shoulder on a XDS curve after anneal-ing at temperature 750 C is connected only with the generation and transferring of AsV and As2V complexes (TED) into the silicon depth. In this case the oxygen diffusion toward the arsenic distribution region can be performed according to the reaction AsV+O  As+VO, where VO is a mobile vacancy-oxygen complex. Also it can lead to the VO2 complex formation. The interaction of VO2 and VO complexes with a self-interstitial silicon atom leads to the formation of mobile O2 complex and interstitial oxygen Oi. The interstitial oxygen and oxy-gen complexes will diffuse towards the source of vacan-cies. Since the arsenic stressed silicon lattice will be stretched and generate the arsenic – vacancy complex-es during the annealing the oxygen precipitation is suppressed [8]. The process will continue until the lat-tice stress compensation. At the same time the arsenic segregation (with the accumulated oxygen) at the SiO2/Si interface will lead to the additional oxidation of the silicon surface.    MECHANISM OF OXYGEN REDISTRIBUTION DURING ULTRA… PROC. NAP 2, 01PCSI14 (2013)   01PCSI14-3 4. CONCLUSION  The quantitative characteristics of oxygen accumu-lation and defect structure of the silicon lattice during the USJ formation were studied. The physical mecha-nism of the oxygen transfer from the silicon bulk to-ward the USJ region is proposed. The mechanism in-volves the interaction of oxygen with point defects in the field of mechanical stresses. Oxygen is gettered by arsenic implanted region due to the mechanical stress gradient. At the increase of the annealing time the one part of arsenic atoms is sit-ed at the crystal lattice sites. The other part is accumu-lated at the SiO2/Si interface. Arsenic redistribution leads to decrease of the mechanical stress. The result is that the flow of oxygen is reduced. Part of oxygen atoms respond to the surface oxide layer formation. The in-creasing of annealing temperature leads to decrease of the mechanical stress gradient and consequently the quantity of gettered oxygen. In this case the gettering process is effective during the first 5-10 s. Thus the USJ formation using low-energy ion implantation is followed by an increase of oxygen concentration in the arsenic distribution region. With increasing of anneal-ing temperature from 750 C to 950 C accumulated oxygen concentration at the arsenic distribution region decreases.   REFERENCES  1. D. Kruger, H. Rucker, B. Heinemann, V. Melnik, R. Kurps, D. Bolze, J. Vac. Sci. Technol. 22 No1, 455 (2004). 2. H. Rucker, B. Heinemann, R. Barth, D. Bolze, V. Melnik, R. Kurps, and D. Kruger, Appl. Phys. Lett. 82 No 5, 826 (2003). 3. P.M. Rousseau, P.B. Griffin, W.T. Fang, J.D. Plummer, J. Appl. Phys. 84, 3593 (1998). 4. H. Shirai, A. Yamaguchi, F. Shimura, Appl. Phys. Lett. 54, 1748 (1996). 5. R. Falster, G.R. Fisher, G. Ferrero, Appl. Phys. Lett. 59, 809 (1991). 6. J. Michel, L. C. Kimmerling, Semiconductors and Semi-metals 42, 251 (Academic Press, 1994). 7. T. J. Magee, C. Leung, H. Kawayoshi, L. J. Palkuti, B. K. Furman, C. A. Evans, L. A. Christel, J. F. Gibbons, and  D. S. Day, Appl. Phys. Lett. 39, 564 (1981). 8. Y. Zhao, D. Li, X. Ma, D. Yang, J. Phys.: Condens. Matter 16, 1539 (2004). 9. G.-H. Lu, Q. Wang, F. Liu, Appl. Phys. Lett. 92, 211906 (2008). 10. O.S. Oberemok, V.G. Lytovchenko, V.P. Melnyuk, O.Yo. Gudymenko, Proc. NAP 1, 03PCSI13 (2012). 11. M. Tamura, Y. Hiroyama, A. Nishida, Ion Implantation Technology Proceedings, 1998 International Conference on, 2, 744 (1999).  

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Mechanism of Oxygen Redistribution During Ultra-shallow Junction Formation in Silicon

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