Non-Linear I-V Characteristics of Double Schottky Barriers and Polycrystalline Semiconductors

An attempt to determine theoretically the highly non-linear current-voltage (I-V) characteristics of polycrystalline semiconductors, such as ZnO-based varistors, is made from the electrical properties of individual grain boundaries under dc bias. The role played by the fluctuations of double Schottky barrier heights at grain interfaces on driving electrical breakdown phenomena of macroscopic samples is pointed out in terms of a binary mixture model. An alternative trial form for the double Schottky barrier height is introduced to reproduce the breakdown voltage as well as the high non-linear coefficient alpha, where I propto V^{alpha}. ------------- Copies upon request to: [email protected]: CM-ICTP/92/1

Production efficiency of Feshbach molecules in fermion systems

We present a consistent nonequilibrium theory for the production of molecular dimers from a two-component quantum-degenerate fermion atomic gas, via a linear downward sweep of the magnetic field across a Feshbach resonance. This problem raises interest because it is presently unclear as to why deviations from the universal Landau-Zener formula for the transition probability at two-level crossing are observed in the experimentally measured production efficiencies. We show that the molecular conversion efficiency is represented by a power series in terms of a dimensionless parameter which, in the zero-temperature limit, depends solely on the initial gas density and the Landau-Zener parameter. Our result reveals a hindrance of the canonical Landau-Zener transition probability due to many-body effects, and presents an explanation for the experimentally observed deviations [K.E. Strecker \textit{et al.}, Phys. Rev. Lett. {\bf 91}, 080406 (2003)].Comment: 4 pages, 1 figur