Localization of non-interacting electrons in thin layered disordered systems

Localization of electronic states in disordered thin layered systems with b layers is studied within the Anderson model of localization using the transfer-matrix method and finite-size scaling of the inverse of the smallest Lyapunov exponent. The results support the one-parameter scaling hypothesis for disorder strengths W studied and b=1,...,6. The obtained results for the localization length are in good agreement with both the analytical results of the self-consistent theory of localization and the numerical scaling studies of the two-dimensional Anderson model. The localization length near the band center grows exponentially with b for fixed W but no localization-delocalization transition takes place.Comment: 6 pages, 5 figure

A Physically Based Compact Model of Partially Depleted MOSFETs for Analog Circuit Stimulation

In this paper, the Southampton Thermal Analogue (STAG) compact model for partially depleted (PD) silicon-on-insulator (SOI) MOSFETs is presented. The model uses a single expression to model the channel current, thereby ensuring continuous transition between all operating regions. Furthermore, care has been taken to ensure that this expression is also infinitely differentiable, resulting in smooth and continuous conductances and capacitances as well as higher order derivatives. Floating-body effects, which are particular to PD SOI and which are of concern to analog circuit designers in this technology, are well modeled. Small geometry effects such as channel length modulation (CLM), drain-induced barrier lowering (DIBL), charge sharing, and high field mobility effects have also been included. Self-heating (SH) effects are much more apparent in SOI devices than in equivalent bulk devices. These have been modeled in a consistent manner, and the implementation in SPICE3f5 gives the user an additional thermal node which allows internal device temperature rises to be monitored and also accommodates the modeling of coupled heating between separate devices. The model has been successfully used to simulate a variety of circuits which commonly cause problems with convergence. Due to its inherent robustness, the model can normally achieve convergence without recourse to the setting of initial nodal voltage estimates

Back gating of a two-dimensional hole gas in a SiGe quantum well

A device comprising a low-resistivity, n-type, Si substrate as a back gate to a p-type (boron), remote-doped, SiGe quantum well has been fabricated and characterized. Reverse and forward voltage biasing of the gate with respect to the two-dimensional hole gas in the quantum well allows the density of holes to be varied from 8 × 1011 cm–2 down to a measurement-limited value of 4 × 1011 cm–2. This device is used to demonstrate the evolution with decreasing carrier density of a re-entrant insulator state between the integer quantum Hall effect states with filling factors 1 and 3

Weak localisation, hole-hole interactions and the "metal"-insulator transition in two dimensions

A detailed investigation of the metallic behaviour in high quality GaAs-AlGaAs two dimensional hole systems reveals the presence of quantum corrections to the resistivity at low temperatures. Despite the low density ($r_{s}>10$) and high quality of these systems, both weak localisation (observed via negative magnetoresistance) and weak hole-hole interactions (giving a correction to the Hall constant) are present in the so-called metallic phase where the resistivity decreases with decreasing temperature. The results suggest that even at high $r_{s}$ there is no metallic phase at T=0 in two dimensions.Comment: 5 pages, 4 figure

Possible Metal/Insulator Transition at B=0 in Two Dimensions

We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$), CONVENTIONAL WEAK LOCALIZATION IS OVERPOWERED BY A SHARP DROP OF RESISTIVITY BY AN ORDER OF MAGNITUDE with decreasing temperature below 1--2 K. No further evidence for electron localization is seen down to at least 20 mK. For $n_s<N_{cr}$, the sample is insulating. The resistivity is empirically found to SCALE WITH TEMPERATURE BOTH BELOW AND ABOVE $n_{cr}$ WITH A SINGLE PARAMETER which approaches zero at $n_s=n_{cr}$ suggesting a metal/ insulator phase transition.Comment: 10 pages; REVTeX v3.0; 3 POSTSCRIPT figures available upon request; to be published in PRB, Rapid Commu

Pathways to economic well-being among teenage mothers in Great Britain

The present study examines pathways to independence from social welfare among 738 teenage mothers, participants of the 1970 British Cohort Study, who were followed up at age 30 years. Using a longitudinal design, a pathway model is tested, examining linkages between family social background, cognitive ability, school motivation, and individual investments in education, as well as work- and family-related roles. The most important factors associated with financial independence by age 30 are continued attachment to the labor market as well as a stable relationship with a partner (not necessarily the father of the child). Pathways to financial independence, in turn, are predicted through own cognitive resources, school motivation, and family cohesion. Implications of findings for policy making are discussed.© 2010 Hogrefe Publishing