Spectral Ellipsometry as a Method of Investigation of Influence of Rapid Thermal Processing of Silicon Wafers on their Optical Characteristics

One of the possible ways of improvement of the surface properties of silicon is the solid phase recrystallization of the surface silicon layer after the chemical-mechanical polishing with application of the rapid thermal treatment with the pulses of second duration. The purpose of the given paper is investigation of influence of the rapid thermal treatment of the initial silicon wafers of the various doping level and reticular density on their optical characteristics by means of the spectral ellipsometry method. The investigation results are presented by means of the spectral ellipsometry method of the rapid thermal processing influence on the initial silicon wafers (KDB12 orientation , KDB10 orientation and KDB0.005 orientation ) of the various level of doping and reticular density influence on their optical characteristics: refraction and absorption ratios. Influence was confirmed of the silicon reticular density on its optical characteristics before and after the rapid thermal processing. It was shown, that reduction of the refraction and absorption ratios in the center of the Brillouin zone for the silicon samples with the high Boron concentration after the rapid thermal processing as compared with the low doped silicon. In the area of the maximum absorption peak, corresponding to the energy of the electron exit from the silicon surface (4.34 eV) the refraction indicator of the high doped silicon becomes higher, than of the low doped silicon, which is determined by the high concentration of the vacant charge carriers on the silicon surface in this spectral range. It was established, that the spectral area 3.59–4.67 eV, corresponding to the work of the electrons, exiting the silicon surface, the most informative way shows the difference of the 3 optical parameters of silicon of the different orientation, and for evaluation of influence of the silicon doping level on its optical characteristics the most informative is the spectral range of 3.32–4.34 eV

Спектральная эллипсометрия как метод изучения влияния быстрой термообработки кремниевых пластин на их оптические характеристики

One of the possible ways of improvement of the surface properties of silicon is the solid phase recrystallization of the surface silicon layer after the chemical-mechanical polishing with application of the rapid thermal treatment with the pulses of second duration. The purpose of the given paper is investigation of influence of the rapid thermal treatment of the initial silicon wafers of the various doping level and reticular density on their optical characteristics by means of the spectral ellipsometry method.The investigation results are presented by means of the spectral ellipsometry method of the rapid thermal processing influence on the initial silicon wafers (KDB12 orientation <100>, KDB10 orientation <111> and KDB0.005 orientation <100>) of the various level of doping and reticular density influence on their optical characteristics: refraction and absorption ratios. Influence was confirmed of the silicon reticular density on its optical characteristics before and after the rapid thermal processing. It was shown, that reduction of the refraction and absorption ratios in the center of the Brillouin zone for the silicon samples with the high Boron concentration after the rapid thermal processing as compared with the low doped silicon. In the area of the maximum absorption peak, corresponding to the energy of the electron exit from the silicon surface (4.34 eV) the refraction indicator of the high doped silicon becomes higher, than of the low doped silicon, which is determined by the high concentration of the vacant charge carriers on the silicon surface in this spectral range.It was established, that the spectral area 3.59–4.67 eV, corresponding to the work of the electrons, exiting the silicon surface, the most informative way shows the difference of the 3 optical parameters of silicon of the different orientation, and for evaluation of influence of the silicon doping level on its optical characteristics the most informative is the spectral range of 3.32–4.34 eV. Одним из возможных путей улучшения поверхностных свойств кремния является твердофазная рекристаллизация поверхностного слоя кремния после химико-механической полировки с использованием быстрой термической обработки импульсами секундной длительности. Целью данной работы являлось исследование влияния быстрой термической обработки исходных кремниевых пластин различного уровня легирования и ретикулярной плотности на их оптические характеристики методом спектральной эллипсометрии.Приведены результаты исследования методом спектральной эллипсометрии влияния быстрой термообработки исходных кремниевых пластин (КДБ-12 ориентации <100>, КДБ-10 ориентации<111> и КДБ-0,005 ориентации <100>) различного уровня легирования и ретикулярной плотности на их оптические характеристики: коэффициенты преломления, поглощения. Подтверждено влияние ретикулярной плотности кремния на его оптические характеристики до и после быстрой термообработки. Установлено уменьшение коэффициентов преломления и поглощения в центре зоны Бриллюэна для образцов кремния с высокой концентрацией бора после быстрой термообработки по сравнению с низколегированным кремнием. В области пика максимума поглощения, соответствующего энергии выхода электрона с поверхности кремния (4.34 эВ) показатель преломления высоколегированного кремния становится выше, чем у низколегированного кремния, что обусловлено высокой концентрацией свободных носителей заряда на поверхности кремния в этом спектральном диапазоне.Установлено, что спектральная область 3.59–4.67 эВ, соответствующая работе выхода электронов с поверхности кремния, наиболее информативно показывает различие оптических параметров кремния различной ориентации, а для оценки влияния уровня легирования кремния на его оптические характеристики наиболее информативен спектральный диапазон 3.32–4.34 эВ

ВЛИЯНИЕ БЫСТРОЙ ТЕРМИЧЕСКОЙ ОБРАБОТКИ ПОДЗАТВОРНОГО ДИЭЛЕКТРИКА НА ПАРАМЕТРЫ МОЩНЫХ ПОЛЕВЫХ МОSFЕТ ТРАНЗИСТОРОВ

Приведены результаты исследований влияния быстрой термической обработки подзатворного диэлектрика на параметры мощных p - и n -канальных MOSFET транзисторов. Установлено, что данная обработка позволяет за счет улучшения зарядовых и структурных свойств диэлектрика уменьшить токи утечки затвора и повысить надежность приборов

Common conformational changes induced in type 2 picornavirus IRESs by cognate trans-acting factors

Type 2 internal ribosomal entry sites (IRESs) of encephalomyocarditis virus (EMCV), foot-and-mouth disease virus (FMDV) and other picornaviruses comprise five major domains H-L. Initiation of translation on these IRESs begins with specific binding of the central domain of initiation factor, eIF4G to the J-K domains, which is stimulated by eIF4A. eIF4G/eIF4A then restructure the region of ribosomal attachment on the IRES and promote recruitment of ribosomal 43S pre-initiation complexes. In addition to canonical translation factors, type 2 IRESs also require IRES trans-acting factors (ITAFs) that are hypothesized to stabilize the optimal IRES conformation that supports efficient ribosomal recruitment: the EMCV IRES is stimulated by pyrimidine tract binding protein (PTB), whereas the FMDV IRES requires PTB and ITAF45. To test this hypothesis, we assessed the effect of ITAFs on the conformations of EMCV and FMDV IRESs by comparing their influence on hydroxyl radical cleavage of these IRESs from the central domain of eIF4G. The observed changes in cleavage patterns suggest that cognate ITAFs promote similar conformational changes that are consistent with adoption by the IRESs of comparable, more compact structures, in which domain J undergoes local conformational changes and is brought into closer proximity to the base of domain I

The detection of neutrino interactions in the emulsion/lead target of the OPERA experiment

The OPERA neutrino detector in the underground Gran Sasso Laboratory (LNGS) was designed to perform the first detection of neutrino oscillations in appearance mode through the study of $\nu_\mu\to\nu_\tau$ oscillations. The apparatus consists of an emulsion/lead target complemented by electronic detectors and it is placed in the high energy long-baseline CERN to LNGS beam (CNGS) 730 km away from the neutrino source. Runs with CNGS neutrinos were successfully carried out in 2007 and 2008 with the detector fully operational with its related facilities for the emulsion handling and analysis. After a brief description of the beam and of the experimental setup we report on the collection, reconstruction and analysis procedures of first samples of neutrino interaction events

First events from the CNGS neutrino beam detected in the OPERA experiment

The OPERA neutrino detector at the underground Gran Sasso Laboratory (LNGS) was designed to perform the first detection of neutrino oscillations in appearance mode, through the study of nu_mu to nu_tau oscillations. The apparatus consists of a lead/emulsion-film target complemented by electronic detectors. It is placed in the high-energy, long-baseline CERN to LNGS beam (CNGS) 730 km away from the neutrino source. In August 2006 a first run with CNGS neutrinos was successfully conducted. A first sample of neutrino events was collected, statistically consistent with the integrated beam intensity. After a brief description of the beam and of the various sub-detectors, we report on the achievement of this milestone, presenting the first data and some analysis results.Comment: Submitted to the New Journal of Physic

Emulsion sheet doublets as interface trackers for the OPERA experiment

New methods for efficient and unambiguous interconnection between electronic counters and target units based on nuclear photographic emulsion films have been developed. The application to the OPERA experiment, that aims at detecting oscillations between mu neutrino and tau neutrino in the CNGS neutrino beam, is reported in this paper. In order to reduce background due to latent tracks collected before installation in the detector, on-site large-scale treatments of the emulsions ("refreshing") have been applied. Changeable Sheet (CSd) packages, each made of a doublet of emulsion films, have been designed, assembled and coupled to the OPERA target units ("ECC bricks"). A device has been built to print X-ray spots for accurate interconnection both within the CSd and between the CSd and the related ECC brick. Sample emulsion films have been extensively scanned with state-of-the-art automated optical microscopes. Efficient track-matching and powerful background rejection have been achieved in tests with electronically tagged penetrating muons. Further improvement of in-doublet film alignment was obtained by matching the pattern of low-energy electron tracks. The commissioning of the overall OPERA alignment procedure is in progress.Comment: 19 pages, 19 figure

Measurement of the atmospheric muon charge ratio with the OPERA detector

The OPERA detector at the Gran Sasso underground laboratory (LNGS) was used to measure the atmospheric muon charge ratio in the TeV energy region. We analyzed 403069 atmospheric muons corresponding to 113.4 days of livetime during the 2008 CNGS run. We computed separately the muon charge ratio for single and for multiple muon events in order to select different energy regions of the primary cosmic ray spectrum and to test the charge ratio dependence on the primary composition. The measured charge ratio values were corrected taking into account the charge-misidentification errors. Data have also been grouped in five bins of the "vertical surface energy". A fit to a simplified model of muon production in the atmosphere allowed the determination of the pion and kaon charge ratios weighted by the cosmic ray energy spectrum.Comment: 14 pages, 10 figure

PENGUIn multi‐instrument observations of dayside high‐latitude injections during the 23 March 2007 substorm

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/94875/1/jgra19563.pd