Role of charge carriers for ferromagnetism in cobalt-doped rutile TiO2

Electric and magnetic properties of a high temperature ferromagnetic oxide semiconductor, cobalt-doped rutile TiO2, are summarized. The cobalt-doped rutile TiO2 epitaxial thin films with different electron densities and cobalt contents were grown on r-sapphire substrates with laser molecular beam epitaxy. Results of magnetization, magnetic circular dichroism, and anomalous Hall effect measurements were examined for samples with systematically varied electron densities and cobalt contents. The samples with high electron densities and cobalt contents show the high temperature ferromagnetism, suggesting that charge carriers induce the ferromagnetism.Comment: 14 pages, 12 figure

Electronic Transport in the Oxygen Deficient Ferromagnetic Semiconducting TiO2−δ_{2-\delta}

TiO$_{2-\delta}$ films were deposited on (100) Lanthanum aluminates LaAlO$_{3}$ substrates at a very low oxygen chamber pressure $P\approx 0.3$ mtorr employing a pulsed laser ablation deposition technique. In previous work, it was established that the oxygen deficiency in these films induced ferromagnetism. In this work it is demonstrated that this same oxygen deficiency also gives rise to semiconductor titanium ion impurity donor energy levels. Transport resistivity measurements in thin films of TiO$_{2-\delta}$ are presented as a function of temperature and magnetic field. Magneto- and Hall- resistivity is explained in terms of electronic excitations from the titanium ion donor levels into the conduction band.Comment: RevTeX4, Four pages, Four Figures in ^.eps forma

Magnetic oxide semiconductors

Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of researches on various magnetic oxide semiconductors. The magnetization, magneto-optical effect, and magneto-transport such as anomalous Hall effect are examined from viewpoint of feasibility to evaluate the ferromagnetism. The ferromagnetism of Co-doped TiO2 and transition metal-doped ZnO is discussed.Comment: 26 pages, 5 tables, 6 figure

Experimental studies on vacancy induced ferromagnetism in undoped TiO2

Room temperature ferromagnetism is observed in undoped TiO2 films deposited on Si substrates using pulsed laser deposition (PLD). The ferromagnetic properties of the samples depend on the oxygen partial pressure during the PLD synthesis. The appearance of higher binding energy component (HBEC) in the oxygen 1s core peak from x-ray photoelectron spectroscopy (XPS) suggests the presence of oxygen vacancies in these samples. The amount of oxygen during the synthesis determines the vacancy concentration in the samples which is directly related to the magnetic behavior of the samples. The magnetic moment decreases with oxygen vacancy concentration in the samples. Valence band measurements were performed to study the electronic structure of both stoichometric and reduced TiO2. The analyses show the presence of Ti 3d band near the Fermi level in reduced TiO2 samples. These bands are otherwise empty in stoichiometric TiO2 and reside in the conduction band which makes them unobservable by XPS. The existence of this Ti 3d band near the Fermi level can possibly lead to Stoner splitting of the band.Comment: 20 pages, 9 figur