The Psychological Importance of Forensic Identification to Families of Victims of Human Rights Violations

No one knows how many people are missing in the world. Among cases involving kidnapping, human trafficking, and armed conflicts, even the most scrutinous efforts can never verify the sheer number of missing persons. This mystery is especially true for armed conflicts and human rights abuses as “the reluctance of most states to deal honestly and effectively with this issue” keeps the number unknown (“Missing”). Sadly, a great deal of missing persons are not only missing, but dead and unidentified, often as a result of armed conflicts like genocide, which uses mass graves. Once the mass graves are unearthed, specially trained experts called forensic anthropologists work tirelessly to examine the skeletonized remains to identify and return them to families and hopefully achieve justice for the victims. The forensic identification of victims of human rights violations, while challenging, is important for the psychological healing of victims’ broken families and is ultimately worth the intense effort

Dynamical mechanism of antifreeze proteins to prevent ice growth

The fascinating ability of algae, insects and fishes to survive at temperatures below normal freezing is realized by antifreeze proteins (AFPs). These are surface-active molecules and interact with the diffusive water/ice interface thus preventing complete solidification. We propose a new dynamical mechanism on how these proteins inhibit the freezing of water. We apply a Ginzburg-Landau type approach to describe the phase separation in the two-component system (ice, AFP). The free energy density involves two fields: one for the ice phase with a low AFP concentration, and one for liquid water with a high AFP concentration. The time evolution of the ice reveals microstructures resulting from phase separation in the presence of AFPs. We observed a faster clustering of pre-ice structure connected to a locking of grain size by the action of AFP, which is an essentially dynamical process. The adsorption of additional water molecules is inhibited and the further growth of ice grains stopped. The interfacial energy between ice and water is lowered allowing the AFPs to form smaller critical ice nuclei. Similar to a hysteresis in magnetic materials we observe a thermodynamic hysteresis leading to a nonlinear density dependence of the freezing point depression in agreement with the experiments

Fabrication of submicron planar Gunn diode

We present, for the first time, the fabrication process for a submicron planar Gunn diode in In<sub>0.53</sub>Ga<sub>0.47</sub>As on an InP substrate operating at 265 GHz. A novel two stage lift off method has been developed to achieve a submicron gaps between contacts down to 135 nm with widths up to 120 μm

50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications

We report well-scaled 50 nm GaAs metamorphic HEMTs (mHEMTs) with DC power consumption in the range 1-150 ΜW/Μ demonstrating f<sub>T</sub> of 30-400 GHz. These metrics enable the realisation of ultra-low power (<500 ΜW) radio transceivers for autonomous distributed sensor network applications

Alignment verification for electron beam lithography

Alignment between lithography layers is essential for device fabrication. A minor defect in a single marker can lead to incorrect alignment and this can be the source of wafer reworks. In this paper we show that this can be prevented by using extra alignment markers to check the alignment during patterning, rather than inspecting vernier patterns after the exposure is completed. Accurate vernier patterns can often only be read after pattern transfer has been carried out. We also show that by using a Penrose tile as a marker it is possible to locate the marker to about 1 nm without fully exposing the resist. This means that the marker can be reused with full accuracy, thus improving the layer to layer alignment accuracy. Lithography tool noise limits the process

180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm

Abstract: Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron metrics are the best values reported to date for III-V MOSFETs, and indicate their potential for scaling to deca-nanometre dimensions

Very high performance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologies

In this paper, we review a range of nanofabrication techniques which enable the realization of uniform, high yield, high performance 50 nm T-gate III-V high electron mobility transistors (HEMTs). These technologies have been applied in the fabrication of a range of lattice matched and pseudomorphic InP HEMTs and GaAs metamorphic HEMTs with functional yields in excess of 95%, threshold voltage uniformity of 5 mV, DC transconductance of up to 1600 mS/mm and f/sub T/ of up to 480 GHz. These technologies and device demonstrators are key to enabling a wide range of millimeter-wave imaging and sensing applications beyond 100 GHz, particularly where array-based multi-channel solutions are required

John Locke, the Protestant ethic and the spirit of capitalism

Abstract Not Provided