A Dynamic CGE Model: An Application of R&D- Based Endogenous Growth Model Theory

An R&D based endogenous growth - applied general equilibrium model is developed from an underlying analytical model which combines Romer's capital variety with Grossman and Helpman's multi-sector open economy model. The transitional dynamics of the analytical model are derived. For numerical implementation, a time discrete empirical model, with an Armington structure, is fit to East Asian data of the social accounting matrix variety. Simulations of trade reform are performed and their static and dynamic effects compared. The transition paths of the state variables are found to have a half-life of five to six periods. A solution of the Social Planner's problem, and interventions which seek to obtain this outcome from the decentralized model are also obtained'.Applied General Equilibrium, Trade, Growth, International Relations/Trade, F11, 031, 041,

Entanglement and the Thermodynamic Arrow of Time

We discuss quantum entanglement in the context of the thermodynamic arrow of time. We review the role of correlations in entropy-decreasing events and prove that the occurrence of a transformation between two thermodynamic states constitutes a new type of entanglement witness, one not defined as a separating plane in state space between separable and entangled states, but as a physical process dependent on the local initial properties of the states. Extending work by Partovi, we consider a general entangled multipartite system that allows large reversals of the thermodynamic arrow of time. We describe a hierarchy of arrows that arises from the different correlations allowed in a quantum state and examine these features in the context of Maxwell's Demon. We examine in detail the case of three qubits, and also propose some simple experimental demonstrations possible with small numbers of qubits.Comment: 10 pages with 9 figure

Are methodological quality and completeness of reporting associated with citation-based measures of publication impact? A secondary analysis of a systematic review of dementia biomarker studies

Objective: To determine whether methodological and reporting quality are associated with surrogate measures of publication impact in the field of dementia biomarker studies. Methods: We assessed dementia biomarker studies included in a previous systematic review in terms of methodological and reporting quality using the Quality Assessment of Diagnostic Accuracy Studies (QUADAS) and Standards for Reporting of Diagnostic Accuracy (STARD), respectively. We extracted additional study and journal-related data from each publication to account for factors shown to be associated with impact in previous research. We explored associations between potential determinants and measures of publication impact in univariable and stepwise multivariable linear regression analyses. Outcome measures: We aimed to collect data on four measures of publication impact: two traditional measures—average number of citations per year and 5-year impact factor of the publishing journal and two alternative measures—the Altmetric Attention Score and counts of electronic downloads. Results: The systematic review included 142 studies. Due to limited data, Altmetric Attention Scores and electronic downloads were excluded from the analysis, leaving traditional metrics as the only analysed outcome measures. We found no relationship between QUADAS and traditional metrics. Citation rates were independently associated with 5-year journal impact factor (β=0.42; p<0.001), journal subject area (β=0.39; p<0.001), number of years since publication (β=-0.29; p<0.001) and STARD (β=0.13; p<0.05). Independent determinants of 5-year journal impact factor were citation rates (β=0.45; p<0.001), statement on conflict of interest (β=0.22; p<0.01) and baseline sample size (β=0.15; p<0.05). Conclusions: Citation rates and 5-year journal impact factor appear to measure different dimensions of impact. Citation rates were weakly associated with completeness of reporting, while neither traditional metric was related to methodological rigour. Our results suggest that high publication usage and journal outlet is not a guarantee of quality and readers should critically appraise all papers regardless of presumed impact

Cavity optoelectromechanical regenerative amplification

Cavity optoelectromechanical regenerative amplification is demonstrated. An optical cavity enhances mechanical transduction, allowing sensitive measurement even for heavy oscillators. A 27.3 MHz mechanical mode of a microtoroid was linewidth narrowed to 6.6\pm1.4 mHz, 30 times smaller than previously achieved with radiation pressure driving in such a system. These results may have applications in areas such as ultrasensitive optomechanical mass spectroscopy

The elimination of surface cross-hatch from relaxed, limited-area Si1 – xGex buffer layers

The influence of lateral dimensions on the relaxation and surface topography of linearly graded Si1 – xGex buffer layers has been investigated. A dramatic change in the relaxation mechanism has been observed for depositions on Si mesa pillars of lateral dimensions 10 µm and below. Misfit dislocations are able to extend unhindered and terminate at the edges of the growth zone, yielding a surface free of cross-hatch. For lateral dimensions in excess of 10 µm orthogonal misfit interactions occur and relaxation is dominated by the modified Frank–Read (MFR) mechanism. The stress fields associated with the MFR dislocation pile-ups result in a pronounced cross-hatch topography

Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure

The 4 K Hall mobility has been measured in a top-gated, inverted, modulation-doped Si/Si0.8Ge0.2 structure having a Si:B doping layer beneath the alloy. From comparisons with theoretical calculations, we argue that, unlike an ordinary enhancement-mode SiGe p-channel metal–oxide–semiconductor structure, this configuration leads to a decrease of interface roughness scattering with increasing sheet carrier density. We also speculate on the nature of the interface charge observed in these structures at low temperature

Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures

We have investigated the energy loss rate of hot holes as a function of carrier temperature TC in p-type inverted modulation-doped (MD) Si/SiGe heterostructures over the carrier sheet density range (3.5–13)×1011 cm–2, at lattice temperatures of 0.34 and 1.8 K. It is found that the energy loss rate (ELR) depends significantly upon the carrier sheet density, n2D. Such an n2D dependence of ELR has not been observed previously in p-type SiGe MD structures. The extracted effective mass decreases as n2D increases, which is in agreement with recent measurements on a gated inverted sample. It is shown that the energy relaxation of the two-dimensional hole gases is dominated by unscreened acoustic phonon scattering and a deformation potential of 3.0±0.4 eV is deduced

Evidence for quantum confinement in the photoluminescence of porous Si and SiGe

We have used anodization techniques to process porous surface regions in p-type Czochralski Si and in p-type Si0.85Ge0.15 epitaxial layers grown by molecular beam epitaxy. The SiGe layers were unrelaxed before processing. We have observed strong near-infrared and visible light emission from both systems. Analysis of the radiative and nonradiative recombination processes indicate that the emission is consistent with the decay of excitons localized in structures of one or zero dimensions

Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor

We have demonstrated reduced 1/f low-frequency noise in sub-µm metamorphic high Ge content p-Si0.3Ge0.7 metal–oxide–semiconductor field-effect transistors (MOSFETs) at 293 K. Three times lower normalized power spectral density (NPSD) SID/ID2 of drain current fluctuations over the 1–100 Hz range at VDS = –50 mV and VG–Vth = –1.5 V was measured for a 0.55 µm effective gate length p-Si0.3Ge0.7 MOSFET compared with a p-Si MOSFET. Performed quantitative analysis clearly demonstrates the importance of carrier number fluctuations and correlated mobility fluctuations (CMFs) components of 1/f noise for p-Si surface channel MOSFETs, and the absence of CMFs for p-Si0.3Ge0.7 buried channel MOSFETs. This explains the reduced NPSD for p-Si0.3Ge0.7 MOSFETs in strong inversion