A Unified Measure of Audio System Fidelity

A new technique to qualitatively measure distortion in dynamically controlled audio systems using non-stationary noise sequences is explored and compared to traditional methods based upon stationary test signals. This technique can easily be adapted to give a qualitative measure of distortion as a function of the perceived Sound Pressure Level (SPL)

A Unified Measure of Audio System Fidelity

A new technique to qualitatively measure distortion in dynamically controlled audio systems using non-stationary noise sequences is explored and compared to traditional methods based upon stationary test signals. This technique can easily be adapted to give a qualitative measure of distortion as a function of the perceived Sound Pressure Level (SPL)

Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect

We report on polarization selection rules of inter-Landau level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on epitaxial graphene grown by thermal decomposition of silicon carbide. We observe symmetric and anti-symmetric signatures in our data due to polarization preserving and polarization mixing inter-Landau level transitions, respectively. From field-dependent measurements we identify that transitions in decoupled graphene mono-layers are governed by polarization mixing selection rules, whereas transitions in coupled graphene mono-layers are governed by polarization preserving selection rules. The selection rules may find explanation by different coupling mechanisms of inter-Landau level transitions with free charge carrier magneto-optic plasma oscillations

Graphene formation on SiC substrates

Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A process was developed to form graphene on the substrates immediately after H2 etching and Raman spectroscopy of these samples confirmed the formation of graphene. The morphology of the graphene is described. For both faces, the underlying substrate morphology was significantly modified during graphene formation; sur-face steps were up to 15 nm high and the uniform step morphology was sometimes lost. Mo-bilities and sheet carrier concentrations derived from Hall Effect measurements on large area (16 mm square) and small area (2 and 10 um square) samples are presented and shown to compare favorably to recent reports.Comment: European Conference on Silicon Carbide and Related Materials 2008 (ECSCRM '08), 4 pages, 4 figure

Evolving Spatially Aggregated Features from Satellite Imagery for Regional Modeling

Satellite imagery and remote sensing provide explanatory variables at relatively high resolutions for modeling geospatial phenomena, yet regional summaries are often desirable for analysis and actionable insight. In this paper, we propose a novel method of inducing spatial aggregations as a component of the machine learning process, yielding regional model features whose construction is driven by model prediction performance rather than prior assumptions. Our results demonstrate that Genetic Programming is particularly well suited to this type of feature construction because it can automatically synthesize appropriate aggregations, as well as better incorporate them into predictive models compared to other regression methods we tested. In our experiments we consider a specific problem instance and real-world dataset relevant to predicting snow properties in high-mountain Asia

Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide

Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free carrier transport studies were conducted through Hall effect measurements, and carrier mobilities were found to increase and sheet carrier densities were found to decrease for those films grown under argon as compared to high vacuum conditions. The improved mobilities and concurrent decreases in sheet carrier densities suggest a decrease in scattering in the films grown under argon.Comment: 215th Meeting of the Electrochemical Society (ECS 215), 14 pages, 6 figure

Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide

Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carrier density, independent of carrier type and substrate polytype. The contributions of scattering mechanisms to the conductivities of the films are discussed. The results suggest that for near-intrinsic carrier densities at 300 K epitaxial graphene mobilities will be ~150,000 cm2V-1s-1 on the (000-1) face and ~5,800 cm2V-1s-1 on the (0001) face.Comment: Accepted for publication in Applied Physics Letters, 10 pages, 2 figure

Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC

Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene.Comment: 12 pages, 4 figure

"Plantar pro gasto": a importância do autoconsumo entre famílias de agricultores do Rio Grande do Sul.

O artigo discute a valoração e importância da produção para o autoconsumo na reprodução social das unidades familiares e caracteriza os alimentos autoconsumidos. Vale-se da pesquisa "Agricultura Familiar, Desenvolvimento Local e Pluriatividade" (UFRGS/UFPel/ CNPq-2003) que propiciou a formação de um banco de dados com informações sobre a dinâmica da agricultura familiar em quatro regiões distintas da geografia gaúcha, suas fontes e tipos de renda, entre estas o autoconsumo. Trazer este debate significa retomar um tema pouco discutido até então, e que, embora marginalizado ou considerado sem importância, desenvolve importante papel como renda não monetária, fortalece a segurança alimentar e adentra esferas da sociabilidade e identidade social. Além da introdução, apresenta-se o papel do autoconsumo na agricultura familiar, o cálculo da produção para o autoconsumo, discussão dos objetivos e resultados, e considerações finais. Os resultados demonstram que a produção para o autoconsumo é uma estratégia recorrente pelas unidades familiares e se diferencia de acordo com a dinâmica da agricultura familiar. Diferença esta expressa em valores relativos (%) e no número de estabelecimentos pertencentes a estratos diferenciados de autoconsumo, e pouco nos tipos de alimentos produzidos para este fim, observando-se uma homogeneidade dos hábitos alimentares