MEG sensor and source measures of visually induced gamma-band oscillations are highly reliable

High frequency brain oscillations are associated with numerous cognitive and behavioral processes. Non-invasive measurements using electro-/magnetoencephalography (EEG/MEG) have revealed that high frequency neural signals are heritable and manifest changes with age as well as in neuropsychiatric illnesses. Despite the extensive use of EEG/MEG-measured neural oscillations in basic and clinical research, studies demonstrating test–retest reliability of power and frequency measures of neural signals remain scarce. Here, we evaluated the test–retest reliability of visually induced gamma (30–100 Hz) oscillations derived from sensor and source signals acquired over two MEG sessions. The study required participants (N = 13) to detect the randomly occurring stimulus acceleration while viewing a moving concentric grating. Sensor and source MEG measures of gamma-band activity yielded comparably strong reliability (average intraclass correlation, ICC = 0.861). Peak stimulus-induced gamma frequency (53–72 Hz) yielded the highest measures of stability (ICCsensor = 0.940; ICCsource = 0.966) followed by spectral signal change (ICCsensor = 0.890; ICCsource = 0.893) and peak frequency bandwidth (ICCsensor = 0.856; ICCsource = 0.622). Furthermore, source-reconstruction significantly improved signal-to-noise for spectral amplitude of gamma activity compared to sensor estimates. Our assessments highlight that both sensor and source derived estimates of visually induced gamma-band oscillations from MEG signals are characterized by high test–retest reliability, with source derived oscillatory measures conferring an improvement in the stability of peak-frequency estimates. Importantly, our finding of high test–retest reliability supports the feasibility of pharma-MEG studies and longitudinal aging or clinical studies

A second-order class-D audio amplifier

Class-D audio amplifiers are particularly efficient, and this efficiency has led to their ubiquity in a wide range of modern electronic appliances. Their output takes the form of a high-frequency square wave whose duty cycle (ratio of on-time to off-time) is modulated at low frequency according to the audio signal. A mathematical model is developed here for a second-order class-D amplifier design (i.e., containing one second-order integrator) with negative feedback. We derive exact expressions for the dominant distortion terms, corresponding to a general audio input signal, and confirm these predictions with simulations. We also show how the observed phenomenon of “pulse skipping” arises from an instability of the analytical solution upon which the distortion calculations are based, and we provide predictions of the circumstances under which pulse skipping will take place, based on a stability analysis. These predictions are confirmed by simulations

The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N$_2$ and O$_2$, and N$_2$ bubbled through liquid H$_2$O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2-3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires.Comment: Accepted for publication in Nanotechnolog

Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors

In this work, rapid thermal annealing was performed on InGaAs/GaAs quantum dot infrared photodetectors (QDIPs) at different temperatures. The photoluminescence showed a blueshifted spectrum in comparison with the as-grown sample when the annealing temperature was higher than 700 °C, as a result of thermal interdiffusion of the quantum dots (QDs). Correspondingly, the spectral response from the annealed QDIP exhibited a redshift. At the higher annealing temperature of 800 °C, in addition to the largely redshifted photoresponse peak of 7.4 µm (compared with the 6.1 µm of the as-grown QDIP), a high energy peak at 5.6 µm (220 meV) was also observed, leading to a broad spectrum linewidth of 40%. This is due to the large interdiffusion effect which could greatly vary the composition of the QDs and thus increase the relative optical absorption intensity at higher energy. The other important detector characteristics such as dark current, peak responsivity, and detectivity were also measured. It was found that the overall device performance was not affected by low annealing temperature, however, for high annealing temperature, some degradation in device detectivity (but not responsivity) was observed. This is a consequence of increased dark current due to defect formation and increased ground state energy. © 2006 American Institute of Physic

Mechanistic and pathological study of the genesis, growth, and rupture of abdominal aortic aneurysms

Postprint (published version

The Fermi level effect in III-V intermixing: The final nail in the coffin?

Copyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 81, 2179 (1997) and may be found at

On the symbolic manipulation and code generation for elasto-plastic material matrices

A computerized procedure for symbolic manipulations and FORTRAN code generation of an elasto-plastic material matrix for finite element applications is presented. Special emphasis is placed on expression simplifications during intermediate derivations, optimal code generation, and interface with the main program. A systematic procedure is outlined to avoid redundant algebraic manipulations. Symbolic expressions of the derived material stiffness matrix are automatically converted to RATFOR code which is then translated into FORTRAN statements through a preprocessor. To minimize the interface problem with the main program, a template file is prepared so that the translated FORTRAN statements can be merged into the file to form a subroutine (or a submodule). Three constitutive models; namely, von Mises plasticity, Drucker-Prager model, and a concrete plasticity model, are used as illustrative examples