Analysis of thin-film structures with nuclear backscattering and x-ray diffraction

Backscattering of MeV ^(4)He ions and Seemann-Bohlin x-ray diffraction techniques have been used to study silicide formation on Si and SiO_2 covered with evaporated metal films. Backscattering techniques provide information on the composition of thin-film structures as a function of depth. The glancing-angle x-ray technique provides identification of phases and structural information. Examples are given of V on Si and on SiO_2 to illustrate the major features of these analysis techniques. We also give a general review of recent studies of silicide formation

Influence of bandwidth restriction on the signal-to-noise performance of a modulated PCM/NRZ signal, part 2

Analyzing effects of bandlimiting on performance of digital transmission corrupted by additive white Gaussian noise by averaging and series expansio

Surface morphological evolutions on single crystal films by strong anisotropic drift-diffusion under the capillary and electromigration forces

The morphological evolution of voids at the unpassivated surfaces and the sidewalls of the single crystal metallic films are investigated via computer simulations by using the novel mathematical model developed by Ogurtani relying on the fundamental postulates of irreversible thermodynamics. The effects of the drift-diffusion anisotropy on the development of the surface morphological scenarios are fully explored under the action of the electromigration (EM) and capillary forces (CF), utilizing numerous combination of the surface textures and the directions of the applied electric field. The interconnect failure time due to the EM induced wedge shape internal voids and the incubation time of the oscillatory surface waves, under the severe instability regimes, are deduced by the novel renormalization procedures applied on the outputs of the computer simulation experiments.Comment: 41 pages, 18 figures. related simulation movies utilizing numerous combination of the surface texture, see http://www.csl.mete.metu.edu.tr/aytac/thesis/movies/index.ht

Identification of the dominant diffusing species in silicide formation

Implanted noble gas atoms of Xe have been used as diffusion markers in the growth study of three silicides: Ni2Si, VSi2, and TiSi2. Backscattering of MeV He has been used to determine the displacement of the markers. We found that while Si atoms predominate the diffusion in VSi2 and TiSi2, Ni atoms are the faster moving species in Ni2Si

Comprehensive HIV care and Anti-Retroviral Therapy in a conflict setting-outcomes, experiences, and lessons learned from Bukavu, Democratic Republic of Congo

2006 AIDS Conference in Toront

The role of Joule heating in the formation of nanogaps by electromigration

We investigate the formation of nanogaps in gold wires due to electromigration. We show that the breaking process will not start until a local temperature of typically 400 K is reached by Joule heating. This value is rather independent of the temperature of the sample environment (4.2-295 K). Furthermore, we demonstrate that the breaking dynamics can be controlled by minimizing the total series resistance of the system. In this way, the local temperature rise just before break down is limited and melting effects are prevented. Hence, electrodes with gaps < 2 nm are easily made, without the need of active feedback. For optimized samples, we observe quantized conductance steps prior the gap formation.Comment: including 7 figure