Structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin film

The structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin films are investigated for potential application in microthermoelectric devices. Nanocrystalline Si0.8Ge0.2 thin films are grown by low-pressure chemical vapor deposition on a sandwich of Si3N4/SiO2/Si3N4 films deposited on a Si (100) substrate. The Si0.8Ge0.2 film is doped with boron by ion implantation. The structure of the thin film is studied by means of atomic force microscopy, x-ray diffraction, and transmission electron microscopy. It is found that the film has column-shaped crystal grains ~100 nm in diameter oriented along the thickness of the film. The electrical conductivity and Seebeck coefficient are measured in the temperature range between 80–300 and 130–300 K, respectively. The thermal conductivity is measured at room temperature by a 3 method. As compared with bulk silicon-germanium and microcrystalline film alloys of nearly the same Si/Ge ratio and doping concentrations, the Si0.8Ge0.2 nanocrystalline film exhibits a twofold reduction in the thermal conductivitity, an enhancement in the Seebeck coefficient, and a reduction in the electrical conductivity. Enhanced heat carrier scattering due to the nanocrystalline structure of the films and a combined effect of boron segregation and carrier trapping at grain boundaries are believed to be responsible for the measured reductions in the thermal and electrical conductivities, respectively

Lorenz function of Bi2_{2}Te3_{3}/Sb2_{2}Te3_{3} superlattices

Combining first principles density functional theory and semi-classical Boltzmann transport, the anisotropic Lorenz function was studied for thermoelectric Bi$_{2}$Te$_{3}$/Sb$_{2}$Te$_{3}$ superlattices and their bulk constituents. It was found that already for the bulk materials Bi$_{2}$Te$_{3}$ and Sb$_{2}$Te$_{3}$, the Lorenz function is not a pellucid function on charge carrier concentration and temperature. For electron-doped Bi$_{2}$Te$_{3}$/Sb$_{2}$Te$_{3}$ superlattices large oscillatory deviations for the Lorenz function from the metallic limit were found even at high charge carrier concentrations. The latter can be referred to quantum well effects, which occur at distinct superlattice periods

A Micro-Thermal Sensor for Focal Therapy Applications

There is an urgent need for sensors deployed during focal therapies to inform treatment planning and in vivo monitoring in thin tissues. Specifically, the measurement of thermal properties, cooling surface contact, tissue thickness, blood flow and phase change with mm to sub mm accuracy are needed. As a proof of principle, we demonstrate that a micro-thermal sensor based on the supported “3ω� technique can achieve this in vitro under idealized conditions in 0.5 to 2 mm thick tissues relevant to cryoablation of the pulmonary vein (PV). To begin with “3ω� sensors were microfabricated onto flat glass as an idealization of a focal probe surface. The sensor was then used to make new measurements of ‘k’ (W/m.K) of porcine PV, esophagus, and phrenic nerve, all needed for PV cryoabalation treatment planning. Further, by modifying the sensor use from traditional to dynamic mode new measurements related to tissue vs. fluid (i.e. water) contact, fluid flow conditions, tissue thickness, and phase change were made. In summary, the in vitro idealized system data presented is promising and warrants future work to integrate and test supported “3ω� sensors on in vivo deployed focal therapy probe surfaces (i.e. balloons or catheters)

Applications of multi-walled carbon nanotube in electronic packaging

Thermal management of integrated circuit chip is an increasing important challenge faced today. Heat dissipation of the chip is generally achieved through the die attach material and solders. With the temperature gradients in these materials, high thermo-mechanical stress will be developed in them, and thus they must also be mechanically strong so as to provide a good mechanical support to the chip. The use of multi-walled carbon nanotube to enhance the thermal conductivity, and the mechanical strength of die attach epoxy and Pb-free solder is demonstrated in this work

Thermal Properties of Graphene, Carbon Nanotubes and Nanostructured Carbon Materials

Recent years witnessed a rapid growth of interest of scientific and engineering communities to thermal properties of materials. Carbon allotropes and derivatives occupy a unique place in terms of their ability to conduct heat. The room-temperature thermal conductivity of carbon materials span an extraordinary large range - of over five orders of magnitude - from the lowest in amorphous carbons to the highest in graphene and carbon nanotubes. I review thermal and thermoelectric properties of carbon materials focusing on recent results for graphene, carbon nanotubes and nanostructured carbon materials with different degrees of disorder. A special attention is given to the unusual size dependence of heat conduction in two-dimensional crystals and, specifically, in graphene. I also describe prospects of applications of graphene and carbon materials for thermal management of electronics.Comment: Review Paper; 37 manuscript pages; 4 figures and 2 boxe

Annealing study and thermal investigation on bismuth sulfide thin films prepared by chemical bath deposition in basic medium

This is a post-peer-review, pre-copyedit version of an article published in Applied Physics A 124.2 (2018): 166. The final authenticated version is available online at: http://doi.org/10.1007/s00339-018-1584-7Bismuth sulfide thin films were prepared by chemical bath deposition using thiourea as sulfide ion source in basic medium. First, the effects of both the deposition parameters on films growth as well as the annealing effect under argon and sulfur atmosphere on as-deposited thin films were studied. The parameters were found to be influential using the Doehlert matrix experimental design methodology. Ranges for a maximum surface mass of films (3 mg cm-2) were determined. A well crystallized major phase of bismuth sulfide with stoichiometric composition was achieved at 190°C for 3 hours. The prepared thin films were characterized using Grazing Incidence X-ray diffraction (GIXRD), Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray analysis (EDX). Second, the band gap energy value was found to be 1.5 eV. Finally, the thermal properties have been studied for the first time by means of the electropyroelectric (EPE) technique. Indeed, the thermal conductivity varied in the range of 1.20 - 0.60 W m-1 K-1 while the thermal diffusivity values increased in terms of the annealing effect ranging from 1.8 to 3.5 10-7 m2s-1This work was financially supported by the Tunisian Ministry of Higher Education and Scientific Research and by the WINCOST (ENE2016-80788-C5-2-R) project funded by the Spanish Ministry of Economy and Competitivenes

Investigation of nanofluid bubble characteristics under non-equilibrium conditions

We report experimental and theoretical investigations of the bubble characteristics during the oscillatory growth period for several nanofluids. The nanoparticles were found to affect liquid–gas and solid surface tensions, which modulated the bubble contact angle, radius of triple line, bubble volume and the dynamics of bubble growth. To increase the accuracy of the Young–Laplace equation predictions during the bubble growth in the oscillatory period, a new method multi-section bubble (MSB) approach was developed. In this method, the bubble was divided into n sections (i.e., n = 1:N) and the Young–Laplace equation was solved for each section individually. As N increases, within each section the effects of inertia force and viscosity become reduced comparing to that of the liquid-gas surface tension. Unlike the conventional Young–Laplace approach (i.e., N = 1), the new approach is able to predict the bubble characteristics reliably in the following cases: (a) the oscillatory period when bubble is fluctuating; (b) the departure period when bubble is stretched upward, right before departure; and (c) the high shear stress condition when gas velocity is relatively high