Atomic layer deposition: Low temperature process well adapted to ULSI and TFT technologies

The high k dielectrics is an important materials to be integrate in future Ultra Large Scale Integration (ULSI) and future TFT technology. Indeed, to keep on the Moore\u27s Law curve, the reduction of silicon oxide (SiO2) thickness still required, but this reduction is hindered by tunneling current leakage limit. Consequently, it is important to replace SiO2 by another materials with high dielectric constant. The use of this material in manufacturing of gate dielectric in Thin-film transistor (TFT) and in Complementary Metal Oxide Semiconductor (CMOS) will increase gate capacitance with maintaining a low leakage current. Titanium dioxide is a good candidate due to its high dielectric constant in its rutile crystalline phase (180).This rutile structure is obtained at low temperature (250°C) by ALD deposition when TiO2 is deposited on ruthenium dioxide (RuO2) layer thanks to the small lattice mismatch between these two materials

The content change of total protein and crude fibre depending on the dose of fertilization and phenological phase of grasses

The experiment was conducted in 2008–2010 in the mountain area. Cumulation of protein and crude fiber were assesed in four grasses: Festuca pratensis, Dactylis glomerata, Phleum pratense, Arrhenatherum elatius. The experience was two-factor. The first factor was varied nitrogen (50, 100, 150 kg ha–1) with constant phosphorus-potassium fertilization. The second factor was the phonological stage – first was at the earing, second – during flowering. Results of assesment shows that Festuca pratensis and Arrhenatherum elatius increased the protein content in plants and reduced the aging process with increasing nitrogen fertilization. In mountain conditions the optimal dose of nitrogen Phleum pratense seems to be 100 kg ha–1 while for Dactylis glomerata best dose was 150 kg

Qualification of a sublimation tool applied to the case of metalorganic chemical vapor deposition of In2O3 from In(tmhd)3 as a solid precursor

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Real-time studies of Ge growth on nanostructured Si substrates

Nanostructured substrates are an interesting path towards the production of quantum dots devoted to microelectronic applications. In this work we report results on the effects of different nanopatterning methods to obtain lateral ordering of Ge islands grown on Si. By using Scanning Tunneling Microscopy we have studied in real-time the wetting layer growth and islands formation on nanopatterned Si substrates at 500 °C. We compare results obtained on Si substrates nanopatterned by using two different techniques: STM lithography and natural patterning induced by surface instabilities such as step bunching. Different issues on both cases have been addressed: substrate preparation, Ge dots placement and growth mode. We have observed that, on Si(001), the Ge islands nucleate near the holes and on Si(111) step bunching can guide the growth of aligned rows of islands.</p

High capacitance 3D MIM structures achieved by ALD deposited TiO2 for advanced DRAM applications

International audienc

Self-ordering of Ge islands on step-bunched Si(111) surfaces

The controlled positioning of germanium (Ge) islands on silicon(111) without lithographic patterning was studied. The step-bunched (SB) silicon(111) surfaces were used as templates. Scanning tunneling microscope images showed that the Ge islands were regularly spaced. The results show an ordered distribution of equally spaced rows of islands on the wide terraces of SB substrates

Understanding the Interface Reaction During ALD Deposition of Thin TiO2 Films on RuO2 Layer—Impact on Physical and Electrical Properties of TiO2

International audienc

Understanding the mechanisms of interfacial reactions during TiO 2 layer growth on RuO 2 by atomic layer deposition with O 2 plasma or H 2 O as oxygen source

International audienc