Offset fields in perpendicularly magnetized tunnel junctions

We study the offset fields affecting the free layer of perpendicularly magnetized tunnel junctions. In extended films, the free layer offset field results from interlayer exchange coupling with the reference layer through the MgO tunnel oxide. The free layer offset field is thus accompanied with a shift of the free layer and reference layer ferromagnetic resonance frequencies. The shifts depend on the mutual orientation of the two magnetizations. The offset field decreases with the resistance area product of the tunnel oxide. Patterning the tunnel junction into an STT-MRAM disk-shaped cell changes substantially the offset field, as the reduction of the lateral dimension comes with the generation of stray fields by the reference and the hard layer. The experimental offset field compares best with the spatial average of the sum of these stray fields, thereby providing guidelines for the offset field engineering.Comment: Special issue of J. Phys. D: Appl. Phys (2019) on STT-MRA

Annealing stability of magnetic tunnel junctions based on dual MgO free layers and [Co/Ni] based thin synthetic antiferromagnet fixed system

We study the annealing stability of bottom-pinned perpendicularly magnetized magnetic tunnel junctions based on dual MgO free layers and thin fixed systems comprising a hard [Co/Ni] multilayer antiferromagnetically coupled to thin a Co reference layer and a FeCoB polarizing layer. Using conventional magnetometry and advanced broadband ferromagnetic resonance, we identify the properties of each sub-unit of the magnetic tunnel junction and demonstrate that this material option can ensure a satisfactory resilience to the 400$^\circ$C thermal annealing needed in solid-state magnetic memory applications. The dual MgO free layer possesses an anneal-robust 0.4 T effective anisotropy and suffers only a minor increase of its Gilbert damping from 0.007 to 0.010 for the toughest annealing conditions. Within the fixed system, the ferro-coupler and texture-breaking TaFeCoB layer keeps an interlayer exchange above 0.8 mJ/m$^2$, while the Ru antiferrocoupler layer within the synthetic antiferromagnet maintains a coupling above -0.5 mJ/m$^2$. These two strong couplings maintain the overall functionality of the tunnel junction upon the toughest annealing despite the gradual degradation of the thin Co layer anisotropy that may reduce the operation margin in spin torque memory applications. Based on these findings, we propose further optimization routes for the next generation magnetic tunnel junctions

Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions

We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the presence of domain walls in junctions of various sizes. In the antiparallel (AP) to parallel (P) switching, a nucleation phase is followed by an irreversible flow of a wall through the sample at an average velocity of 40 m/s with back and forth oscillation movements indicating a Walker propagation regime. A model with a single-wall locally responding to the spin-torque reproduces the essential dynamical signatures of the reversal. The P to AP transition has a complex dynamics with dynamical back-hopping whose probability increases with voltage. We attribute this back-hopping to the instability of the nominally fixed layers

SOT-MRAM 300mm integration for low power and ultrafast embedded memories

We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.Comment: presented at VLSI2018 session C8-

Effect of microstructural evolution on magnetic properties of Ni thin films

Copyright © Indian Academy of Sciences.The magnetic properties of Ni thin films, in the range 20–500 nm, at the crystalline-nanocrystalline interface are reported. The effect of thickness, substrate and substrate temperature has been studied. For the films deposited at ambient temperatures on borosilicate glass substrates, the crystallite size, coercive field and magnetization energy density first increase and achieve a maximum at a critical value of thickness and decrease thereafter. At a thickness of 50 nm, the films deposited at ambient temperature onto borosilicate glass, MgO and silicon do not exhibit long-range order but are magnetic as is evident from the non-zero coercive field and magnetization energy. Phase contrast microscopy revealed that the grain sizes increase from a value of 30–50 nm at ambient temperature to 120–150 nm at 503 K and remain approximately constant in this range up to 593 K. The existence of grain boundary walls of width 30–50 nm is demonstrated using phase contrast images. The grain boundary area also stagnates at higher substrate temperature. There is pronounced shape anisotropy as evidenced by the increased aspect ratio of the grains as a function of substrate temperature. Nickel thin films of 50 nm show the absence of long-range crystalline order at ambient temperature growth conditions and a preferred [111] orientation at higher substrate temperatures. Thin films are found to be thermally relaxed at elevated deposition temperature and having large compressive strain at ambient temperature. This transition from nanocrystalline to crystalline order causes a peak in the coercive field in the region of transition as a function of thickness and substrate temperature. The saturation magnetization on the other hand increases with increase in substrate temperature.University Grants Commission for Centre of Advanced Studies in Physic

Gilbert damping of high anisotropy Co/Pt multilayers

Using broadband ferromagnetic resonance, we measure the damping parameter of [Co(5 \r{A})/Pt(3 \r{A})]${\times 6}$ multilayers whose growth was optimized to maximize the perpendicular anisotropy. Structural characterizations indicate abrupt interfaces essentially free of intermixing despite the miscible character of Co and Pt. Gilbert damping parameters as low as 0.021 can be obtained despite a magneto-crystalline anisotropy as large as $10^6~\textrm{J/m}^3$. The inhomogeneous broadening accounts for part of the ferromagnetic resonance linewidth, indicating some structural disorder leading to a equivalent 20 mT of inhomogenity of the effective field. The unexpectedly relatively low damping factor indicates that the presence of the Pt heavy metal within the multilayer may not be detrimental to the damping provided that intermixing is avoided at the Co/Pt interfaces

Automatic recognition of schwa variants in spontaneous Hungarian speech

This paper analyzes the nature of the process involved in optional vowel reduction in Hungarian, and the acoustic structure of schwa variants in spontaneous speech. The study focuses on the acoustic patterns of both the basic realizations of Hungarian vowels and their realizations as neutral vowels (schwas), as well as on the design, implementation, and evaluation of a set of algorithms for the recognition of both types of realizations from the speech waveform. The authors address the question whether schwas form a unified group of vowels or they show some dependence on the originally intended articulation of the vowel they stand for. The acoustic study uses a database consisting of over 4,000 utterances extracted from continuous speech, and recorded from 19 speakers. The authors propose methods for the recognition of neutral vowels depending on the various vowels they replace in spontaneous speech. Mel-Frequency Cepstral Coefficients are calculated and used for the training of Hidden Markov Models. The recognition system was trained on 2,500 utterances and then tested on 1,500 utterances. The results show that a neutral vowel can be detected in 72% of all occurrences. Stressed and unstressed syllables can be distinguished in 92% of all cases. Neutralized vowels do not form a unified group of phoneme realizations. The pronunciation of schwa heavily depends on the original articulation configuration of the intended vowel

Investigation of microwave loss induced by oxide regrowth in high-Q Nb resonators

The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microwave loss from these interfaces by proper surface treatments is key to push the device performance forward. Here, we study niobium resonators after removing the native oxides with a hydrofluoric acid etch. We investigate the reappearance of microwave losses introduced by surface oxides that grow after exposure to the ambient environment. We find that losses in quantum devices are reduced by an order of magnitude, with internal Q-factors reaching up to 7 $\cdot$ 10$^6$ in the single photon regime, when devices are exposed to ambient conditions for 16 min. Furthermore, we observe that Nb2O5 is the only surface oxide that grows significantly within the first 200 hours, following the extended Cabrera-Mott growth model. In this time, microwave losses scale linearly with the Nb$_2$O$_5$ thickness, with an extracted loss tangent tan$\delta$ = 9.9 $\cdot$ 10$^{-3}$. Our findings are of particular interest for devices spanning from superconducting qubits, quantum-limited amplifiers, microwave kinetic inductance detectors to single photon detectors.Comment: 5+11 pages, 5+7 figures, 0+7 table

Evidence of Magnetostrictive Effects on STT-MRAM Performance by Atomistic and Spin Modeling

For the first time, we demonstrate, using an atomistic description of a 30nm diameter spin-transfer-torque magnetic random access memories (STT-MRAM), that the difference in mechanical properties of its sub-nanometer layers induces a high compressive strain in the magnetic tunnel junction (MTJ) and leads to a detrimental magnetostrictive effect. Our model explains the issues met in engineering the electrical and magnetic performances in scaled STT-MRAM devices. The resulting high compressive strain built in the stack, particularly in the MgO tunnel barrier (t-MgO), and its associated non-uniform atomic displacements, impacts on the quality of the MTJ interface and leads to strain relieve mechanisms such as surface roughness and adhesion issues. We illustrate that the strain gradient induced by the different materials and their thicknesses in the stacks has a negative impact on the tunnel magneto-resistance (TMR), on the magnetic nucleation process and on the STT-MRAM performance

Consensus criteria for sensitive detection of minimal neuroblastoma cells in bone marrow, blood and stem cell preparations by immunocytology and QRT-PCR: recommendations by the International Neuroblastoma Risk Group Task Force

Disseminating disease is a predictive and prognostic indicator of poor outcome in children with neuroblastoma. Its accurate and sensitive assessment can facilitate optimal treatment decisions. The International Neuroblastoma Risk Group (INRG) Task Force has defined standardised methods for the determination of minimal disease (MD) by immunocytology (IC) and quantitative reverse transcriptase-polymerase chain reaction (QRT-PCR) using disialoganglioside GD2 and tyrosine hydroxylase mRNA respectively. The INRG standard operating procedures (SOPs) define methods for collecting, processing and evaluating bone marrow (BM), peripheral blood (PB) and peripheral blood stem cell harvest by IC and QRT-PCR. Sampling PB and BM is recommended at diagnosis, before and after myeloablative therapy and at the end of treatment. Peripheral blood stem cell products should be analysed at the time of harvest. Performing MD detection according to INRG SOPs will enable laboratories throughout the world to compare their results and thus facilitate quality-controlled multi-centre prospective trials to assess the clinical significance of MD and minimal residual disease in heterogeneous patient groups