7,289 research outputs found
Description of superdeformed bands in light N=Z nuclei using the cranked HFB method
Superdeformed states in light nuclei are studied by means of the
self-consistent cranking calculation (i.e., the P + QQ model based on the
cranked Hartree-Fock-Bogoliubov method). Analyses are given for two typical
cases of superdeformed bands in the mass region, that is, bands
where backbending is absent (Ca) and present (Ar). Investigations
are carried out, particularly for the following points: cross-shell excitations
in the sd and pf shells; the role of the g and d orbitals; the
effect of the nuclear pairing; and the interplay between triaxiality and band
termination.Comment: 17 pages, 18 figures, accepted in Phys. Rev.
Quasi-thermal Comptonization and gamma-ray bursts
Quasi-thermal Comptonization in internal shocks formed between relativistic
shells can account for the high energy emission of gamma-ray bursts. This is in
fact the dominant cooling mechanism if the typical energy of the emitting
particles is achieved either through the balance between heating and cooling or
as a result of electron-positron pair production. Both processes yield sub or
mildly relativistic energies. In this case the synchrotron spectrum is
self-absorbed, providing the seed soft photons for the Comptonization process,
whose spectrum is flat [F(v) ~ const], ending either in an exponential cutoff
or a Wien peak, depending on the scattering optical depth of the emitting
particles. Self-consistent particle energy and optical depth are estimated and
found in agreement with the observed spectra.Comment: 10 pages, ApJ Letters, accepted for publicatio
Kinetics of electron-positron pair plasmas using an adaptive Monte Carlo method
A new algorithm for implementing the adaptive Monte Carlo method is given. It
is used to solve the relativistic Boltzmann equations that describe the time
evolution of a nonequilibrium electron-positron pair plasma containing
high-energy photons and pairs. The collision kernels for the photons as well as
pairs are constructed for Compton scattering, pair annihilation and creation,
bremsstrahlung, and Bhabha & Moller scattering. For a homogeneous and isotropic
plasma, analytical equilibrium solutions are obtained in terms of the initial
conditions. For two non-equilibrium models, the time evolution of the photon
and pair spectra is determined using the new method. The asymptotic numerical
solutions are found to be in a good agreement with the analytical equilibrium
states. Astrophysical applications of this scheme are discussed.Comment: 43 pages, 7 postscript figures, to appear in the Astrophysical
Journa
Money in monetary policy design: monetary cross-checking in the New-Keynesian model
In the New-Keynesian model, optimal interest rate policy under uncertainty is formulated without reference to monetary aggregates as long as certain standard assumptions on the distributions of unobservables are satisfied. The model has been criticized for failing to explain common trends in money growth and inflation, and that therefore money should be used as a cross-check in policy formulation (see Lucas (2007)). We show that the New-Keynesian model can explain such trends if one allows for the possibility of persistent central bank misperceptions. Such misperceptions motivate the search for policies that include additional robustness checks. In earlier work, we proposed an interest rate rule that is near-optimal in normal times but includes a cross-check with monetary information. In case of unusual monetary trends, interest rates are adjusted. In this paper, we show in detail how to derive the appropriate magnitude of the interest rate adjustment following a significant cross-check with monetary information, when the New-Keynesian model is the central bankâs preferred model. The cross-check is shown to be effective in offsetting persistent deviations of inflation due to central bank misperceptions. Keywords: Monetary Policy, New-Keynesian Model, Money, Quantity Theory, European Central Bank, Policy Under Uncertaint
Comparison of near-interface traps in AlO/4H-SiC and AlO/SiO/4H-SiC structures
Aluminum oxide (Al2O3) has been grown by atomic layer deposition on n-type
4H-SiC with and without a thin silicon dioxide (SiO2) intermediate layer. By
means of Capacitance Voltage and Thermal Dielectric Relaxation Current
measurements, the interface properties have been investigated. Whereas for the
samples with an interfacial SiO2 layer the highest near-interface trap density
is found at 0.3 eV below the conduction band edge, Ec, the samples with only
the Al2O3 dielectric exhibit a nearly trap free region close to Ec. For the
Al2O3/SiC interface, the highest trap density appears between 0.4 to 0.6 eV
below Ec. The results indicate the possibility for SiC-based MOSFETs with Al2O3
as the gate dielectric layer in future high performance devices.Comment: 3 figures. Applied Physics Letters, accepted for publicatio
Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation
An experimental concept of studying shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion-implanted silicon is demonstrated. This concept is based on deep level transient spectroscopy measurements where the filling pulse width is varied. The vacancy profile, represented by the vacancy-oxygen center, and the interstitial profile, represented by the substitutional carbonâinterstitial carbon pair, are obtained at the same sample temperature and can be recorded with a high relative depth resolution. For 6 MeV ââB ions, the peak of the interstitial profile is displaced by âŒ0.5 ÎŒm towards larger depths compared to that of the vacancy profile, which is primarily attributed to the preferential forward momentum of recoiling Si atoms.Financial support was kindly provided by the Swedish
Research Council for Engineering Sciences (TFR), the
Swedish Foundation for International Cooperation in Research
and Higher Education (STINT), and the EU Commission,
Contract No. ERBFMRXCT980208 (ENDEASDâTMR network)
Hydrogen induced optically-active defects in silicon photonic nanocavities
This work was supported by Era-NET NanoSci LECSIN project coordinated by F. Priolo, by the Italian Ministry of University and Research, FIRB contract No. RBAP06L4S5 and by the EPSRC UKSp project. Partial financial support by the Norwegian Research Council is also acknowledged.We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- related defects incorporated into crystalline silicon. Hydrogen was incorporated into the device layer of a silicon on insulator (SOI) wafer by two methods: hydrogen plasma treatment and ion implantation. The room temperature PL spectra show two broad PL bands centered at 1300 and 1500 nm wavelengths: the first one relates to implanted defects while the other band mainly relates to the plasma treatment. Structural characterization reveals the presence of nanometric platelets and bubbles and we attribute different features of the emission spectrum to the presence of these different kind of defects. The emission is further enhanced by introducing defects into photonic crystal (PhC) nanocavities. Transmission electron microscopy analyses revealed that the isotropicity of plasma treatment causes the formation of a higher defects density around the whole cavity compared to the ion implantation technique, while ion implantation creates a lower density of defects embedded in the Si layer, resulting in a higher PL enhancement. These results further increase the understanding of the nature of optically active hydrogen defects and their relation with the observed photoluminescence, which will ultimately lead to the development of intense and tunable crystalline silicon light sources at room temperature.Publisher PDFPeer reviewe
InAs nanowire transistors with multiple, independent wrap-gate segments
We report a method for making horizontal wrap-gate nanowire transistors with
up to four independently controllable wrap-gated segments. While the step up to
two independent wrap-gates requires a major change in fabrication methodology,
a key advantage to this new approach, and the horizontal orientation more
generally, is that achieving more than two wrap-gate segments then requires no
extra fabrication steps. This is in contrast to the vertical orientation, where
a significant subset of the fabrication steps needs to be repeated for each
additional gate. We show that cross-talk between adjacent wrap-gate segments is
negligible despite separations less than 200 nm. We also demonstrate the
ability to make multiple wrap-gate transistors on a single nanowire using the
exact same process. The excellent scalability potential of horizontal wrap-gate
nanowire transistors makes them highly favourable for the development of
advanced nanowire devices and possible integration with vertical wrap-gate
nanowire transistors in 3D nanowire network architectures.Comment: 18 pages, 5 figures, In press for Nano Letters (DOI below
A comparative study of super- and highly-deformed bands in the A ~ 60 mass region
Super- and highly-deformed rotational bands in the A ~ 60 mass region are
studied within cranked relativistic mean field theory and the
configuration-dependent shell-correction approach based on the cranked Nilsson
potential. Both approaches describe the experimental data well. Low values of
the dynamic moments of inertia J^(2) compared with the kinematic moments of
inertia J^(1) seen both in experiment and in calculations at high rotational
frequencies indicate the high energy cost to build the states at high spin and
reflect the limited angular momentum content in these configurations.Comment: 11 pages, 4 PostScript figures, Latex, uses 'epsf', submitted to
Phys. Lett.
High Energy Break and Reflection Features in the Seyfert Galaxy MCG+8-11-11
We present the results from ASCA and OSSE simultaneous observations of the
Seyfert 1.5 galaxy MCG+8-11-11 performed in August-September 1995. The ASCA
observations indicate a modest flux increase (20%) in 3 days, possibly
correlated to a softening of the 0.6-9 keV spectrum. The spectrum is well
described by a hard power law (Gamma=1.64) absorbed by a column density
slightly larger than the Galactic value, with an iron line at 6.4 keV of EW=400
eV. The simultaneous OSSE data are characterized by a much softer power law
with photon index Gamma=3.0, strongly suggesting the presence of a spectral
break in the hard X/soft gamma-ray band. A joint fit to OSSE and ASCA data
clearly shows an exponential cut-off at about 300 keV, and strong reflection
component. MCG+8-11-11 features a spectral break in the underlying continuum
unambiguously. This, together with the inferred low compactness of this source,
favours thermal or quasi-thermal electron Comptonization in a structured Corona
as the leading process of high energy radiation production.Comment: 13 pages, + 4 figure.ps AAS LateX [11pt,aasms4]{article} To be
published in ApJ, Main Journa
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