Electrical characteristics of amorphous iron-tungsten contacts on silicon

The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities, pc=1×10^−7 and pc=2.8×10^−6, were measured on n+ and p+ silicon, respectively. These values remain constant after thermal treatment up to at least 500°C. A barrier height, φBn=0.61 V, was measured on n-type silicon

Compensating impurity effect on epitaxial regrowth rate of amorphized Si

The epitaxial regrowth of ion-implanted amorphous layers on Si with partly compensated doping profiles of 11B, 75As, and 31P was studied. Single implants of these impurities are found to increase the regrowth rate at 475 and 500°C. The compensated layers with equal concentrations of 11B and 31P or 11B and 75As show a strong decrease of the regrowth whereas for the layers with overlapping 75As and 31P profiles no compensation has been found

Perancangan Kendali Kecepatan Motor Arus Searah Menggunakan Metode Root Locus

Motor arus searah (DC) menjadi populer karena fleksibilitas dan kemudahan dalam pengoperasiannya. Namun motor DC perlu diatur agar mempunyai kecepatan serta respon transien yang diinginkan terlebih ketika diberi beban. Penelitian ini bertujuan untuk merancang dan mensimulasikan alternatif pengendalian motor DC. Pengendalian yang digunakan adalah dengan metode Proporsional Integral Derivatif (PID) melalui root locus. Pada artikel ini akan dipaparkan pemodelan motor DC yang akan diperoleh fungsi alih antara kecepatan sudut dan input tegangan jangkar. Kemudian akan dilihat dan dirancang skema pengendalian dengan respon transien dan steady state yang diinginkan melalui root locus dengan menambahkan pole dan zero. Setelah disimulasikan, hasil perancangan kendali PID yang diperoleh telah sesuai spesifikasi yang diinginkan serta stabil dengan uji kestabilan Routh Hurwitz

Klasifikasi Shadow Algorithm

Dalam bidang Grafika Komputer Shadow Algorithm merupakan salah satu kajian yang menarik. Shadow Algorithm, suatu algoritma yang digunakan untuk menghasilkan sebuah bayangan objek pada suatu scene. Pengembangan berbagai shadow algorithm sudah banyak dilakukan. Klasifikasi algoritma menurut tipe interaktifitasnya dan hasil render dengan cepat (immediate render), algoritma terbagi menjadi dua yaitu real-time dan non-real-time. Sedangkan melihat dari bayangan yang dihasilkan terdapat dua jenis yaitu hard shadow dan soft shadow

Substrate orientation dependence of enhanced epitaxial regrowth of silicon

This work extends the study of dopant-enhanced epitaxial regrowth rate of amorphized Si from the to the and orientations of Si. Boron and phosphorus dopants are considered. The annealing temperatures are 500 and 550 °C. Phosphorus enhances the growth rates in all three orientations by a constant factor of 8.1±0.9. Boron produces a higher enhancement factor of 12.2±1.2, except in the case of . Implications of the results on various growth models are considered. The crystalline quality of regrown layers is improved in the doped samples

Influence of F and Cl on the recrystallization of ion-implanted amorphous Si

The effect of fluorine and chlorine implantation on the solid-phase epitaxial regrowth of amorphized Si was studied in intrinsic and heavily boron doped material. Annealings were performed at 500 and 600°C. Both F and Cl retard the regrowth rate at 500°C. The growth rates are much faster in B-doped than in undoped Si. Complete regrowth in B-doped Si is obtained for all investigated doses of fluorine up to 5×10^15 F/cm^2 at 600°C for 30 min. The highest dose of chlorine (5×10^15 Cl/cm^2) stops the regrowth at this temperature

Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon

Amorphous films of Ni-W and Ni-N-W were deposited on single-crystal silicon with discharge gases of Ar or Ar+N2 by rf cosputtering of Ni and W. The reaction of these Ni-W and Ni-N-W films with the Si substrate were studied in the temperature range of 450–750 °C by a combination of backscattering spectrometry, x-ray diffraction, cross-sectional transmission electron microscopy, and resistivity measurements. Films with composition Ni36W64 are stable below 500 °C. NiSi and NiSi2 form at 500 °C, and WSi2 forms rapidly in the temperature range of 625–650 °C. The nickel silicide forms adjacent to and within the silicon, while the outer layer becomes a mixture of WSi2 and NiSi2. The morphologies of the reacted layers are revealed by cross-sectional transmission electron microscopy. The crystallization temperature of amorphous Ni36W64 films on SiO2 is near 650 °C also. Adding nitrogen to form amorphous Ni30N21W49 films lowers the crystallization temperature, but raises the reaction temperature with Si to 750 °C

"Earth observation for land-atmosphere interaction science", Preface

Non peer reviewe

Superconducting Nb-film LC resonator

Sputtered Nb thin-film LC resonators for low frequencies at 0.5 MHz have been fabricated and tested in the temperature range 0.05--1 K in magnetic fields up to 30 mT. Their Q value increases towards decreasing temperature as sqrt(T) and reaches 10^3 at 0.05 K. As a function of magnetic field Q is unstable and displays variations up to 50%, which are reproducible from one field sweep to the next. These instabilities are attributed to dielectric losses in the plasma deposited SiO_2 insulation layer, since the thin-film coil alone reaches a Q > 10^5 at 0.05 K.Comment: 6 pages, 7 figures, submitted to Review of Scientific Instrument