1,810 research outputs found

    Proteomic analysis of the rat ovary following chronic low-dose exposure to 2,3,7,8-tetrachlorodibenzo-p-dioxin (TCDD)

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    2,3,7,8-Tetrachlorodibenzo-p-dioxin (TCDD) is a ubiquitously distributed endocrine-disrupting chemical and reproductive toxicant. In order to elucidate low-dose TCDD-mediated effects on reproductive or endocrine functions, female Sprague-Dawley rats were orally administered various concentrations (20, 50, or 125 ng/kg once weekly) TCDD for 29 wk. A proteomic analysis of the ovaries by two-dimensional gel electrophoresis and matrix-assisted laser desorption/ionization (MALDI) tandem mass spectrometry showed distinct changes in the levels of several proteins that are relevant markers of TCDD toxicity. Serum estradiol (E2) levels of TCDD-treated animals were markedly lower than control. There were no significant differences in bone mineral density (BMD) of femurs. The body weight of the 125-ng/kg TCDD group was significantly decreased relative to control and there was also a significant reduction in absolute and relative ovarian weights. Expressions of selenium binding protein 2, glutathione S-transferase mu type 3, Lrpap1 protein, NADPH, and peptidylprolyl isomerase D were upregulated, while prohibitin and N-ethylmaleimide-sensitive factor expression levels were downregulated. Data provide further insight into the mechanisms by which TCDD disrupts ovarian function by indicating which differential protein expressions following low-dose TCDD exposure

    Multi-nanolayered VO2/Sapphire Thin Film via Spinodal Decomposition

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    Abstract Coating of VO2-based thin film has been extensively studied for fabricating energy-saving smart windows. One of the most efficient ways for fabricating high performance films is to create multi-nanolayered structure. However, it has been highly challenge to make such layers in the VO2-based films using conventional methods. In this work, a facile two-step approach is established to fabricate multilayered VO2-TiO2 thin films. We first deposited the amorphous thin films upon sputtering, and then anneal them to transform the amorphous phase into alternating Ti- and V-rich multilayered nanostructure via a spinodal decomposition mechanism. In particular, we take advantage of different sapphire substrate planes (A-plane (11–20), R-plane (1–102), C-plane (0001), and M-plane (10-10)) to achieve different decomposition modes. The new approach has made it possible to tailoring the microstructure of the thin films for optimized performances by controlling the disorder-order transition in terms of both kinetic and thermodynamic aspects. The derived thin films exhibit superior optical modulation upon phase transition, significantly reduced transition temperature and hysteresis loop width, and high degradation resistance, these improvements indicate a high potential to be used for fabricating the next generation of energy saving smart windows

    Thermodynamic properties, multiphase gas, and AGN feedback in a large sample of giant ellipticals

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    We present a study of the thermal structure of the hot X-ray emitting atmospheres for a sample of 49 nearby X-ray and optically bright elliptical galaxies using {\it Chandra} X-ray data. We focus on the connection between the properties of the hot X-ray emitting gas and the cooler Hα\alpha+[NII] emitting phase, and the possible role of the latter in the AGN (Active Galactic Nuclei) feedback cycle. We do not find evident correlations between the Hα\alpha+[NII] emission and global properties such as X-ray luminosity, mass of hot gas, and gas mass fraction. We find that the presence of Hα\alpha+[NII] emission is more likely in systems with higher densities, lower entropies, shorter cooling times, shallower entropy profiles, lower values of min(tcool/tfft_{\rm cool}/t_{\rm ff}), and disturbed X-ray morphologies (linked to turbulent motions). However, we see no clear separations in the observables obtained for galaxies with and without optical emission line nebulae. The AGN jet powers of the galaxies with X-ray cavities show hint of a possible weak positive correlation with their Hα\alpha+[NII] luminosities. This correlation and the observed trends in the thermodynamic properties may result from chaotic cold accretion (CCA) powering AGN jets, as seen in some high-resolution hydrodynamic simulations.Comment: Published in MNRA

    Exceptionally Slow Rise in Differential Reflectivity Spectra of Excitons in GaN: Effect of Excitation-induced Dephasing

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    Femtosecond pump-probe (PP) differential reflectivity spectroscopy (DRS) and four-wave mixing (FWM) experiments were performed simultaneously to study the initial temporal dynamics of the exciton line-shapes in GaN epilayers. Beats between the A-B excitons were found \textit{only for positive time delay} in both PP and FWM experiments. The rise time at negative time delay for the differential reflection spectra was much slower than the FWM signal or PP differential transmission spectroscopy (DTS) at the exciton resonance. A numerical solution of a six band semiconductor Bloch equation model including nonlinearities at the Hartree-Fock level shows that this slow rise in the DRS results from excitation induced dephasing (EID), that is, the strong density dependence of the dephasing time which changes with the laser excitation energy.Comment: 8 figure

    Studies of the electric dipole transitions of deformed rare-earth nuclei

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    Spectrum and electric dipole transition rates and relative intensities in 152154^{152-154}Sm, 156160^{156-160}Gd, 160162^{160-162}Dy are studied in the framework of the interacting boson model with s,p,d,f bosons. It is found that E1 transition data among the low-lying levels are in good agreement with the SU(3) dynamical symmetry of the spdf interacting boson model proposed by Engel and Iachello to describe collective rotation with octupole vibration. These results show that these nuclei have SU(3) dynamic symmetry to a good approximation. Also in this work many algebraic expressions for electric dipole transitions in the SU(3) limit of the spdf-IBM have been obtained. These formulae together with the formulae given previously exhaust nearly all the E1 transitions for low-lying negative parity states. They are useful in analyzing experimental data.Comment: 26 pages, 1 figur

    An efficient non-Lambertian organic light-emitting diode using imprinted submicron-size zinc oxide pillar arrays

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    We report phosphorescent organic light-emitting diodes with a substantially improved light outcoupling efficiency and a wider angular distribution through applying a layer of zinc oxide periodic nanopillar arrays by pattern replication in non-wetting templates technique. The devices exhibited the peak emission intensity at an emission angle of 40° compared to 0° for reference device using bare ITO-glass. The best device showed a peak luminance efficiency of 95.5 ± 1.5 cd/A at 0° emission (external quantum efficiency - EQE of 38.5 ± 0.1%, power efficiency of 127 ± 1 lm/W), compared to that of the reference device, which has a peak luminance efficiency of 68.0 ± 1.4 cd/A (EQE of 22.0 ± 0.1%, power efficiency of 72 ± 1 lm/W). © 2013 American Institute of Physics

    c-Axis Transport and Resistivity Anisotropy of Lightly- to Moderately-Doped La_{2-x}Sr_{x}CuO_{4} Single Crystals: Implications on the Charge Transport Mechanism

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    Both the in-plane and the out-of-plane resistivities (\rho_{ab} and \rho_{c}) are measured in high-quality La_{2-x}Sr_{x}CuO_{4} (LSCO) single crystals in the lightly- to moderately-doped region, x = 0.01 to 0.10, and the resistivity anisotropy is determined. In all the samples studied, the anisotropy ratio \rho _{c}/\rho_{ab} quickly increases with decreasing temperature, although in non-superconducting samples the strong localization effect causes \rho _{c}/\rho_{ab} to decrease at low temperatures. Most notably, it is found that \rho_{c}/\rho_{ab} at moderate temperatures (100 - 300 K) is almost completely independent of doping in the non-superconducting regime (x = 0.01 to 0.05); this indicates that the same charge confinement mechanism that renormalizes the c-axis hopping rate is at work down to x = 0.01. It is discussed that this striking x-independence of \rho_{c}/\rho_{ab} is consistent with the idea that holes form a self-organized network of hole-rich regions, which also explains the unusually metallic in-plane transport of the holes in the lightly-doped region. Furthermore, the data for x > 0.05 suggest that the emergence of the superconductivity is related to an increase in the c-axis coupling.Comment: 7 pages, 5 figures, submitted to Phys. Rev.

    Partial Wave Analysis of J/ψγ(K+Kπ+π)J/\psi \to \gamma (K^+K^-\pi^+\pi^-)

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    BES data on J/ψγ(K+Kπ+π)J/\psi \to \gamma (K^+K^-\pi^+\pi^-) are presented. The KKˉK^*\bar K^* contribution peaks strongly near threshold. It is fitted with a broad 0+0^{-+} resonance with mass M=1800±100M = 1800 \pm 100 MeV, width Γ=500±200\Gamma = 500 \pm 200 MeV. A broad 2++2^{++} resonance peaking at 2020 MeV is also required with width 500\sim 500 MeV. There is further evidence for a 2+2^{-+} component peaking at 2.55 GeV. The non-KKˉK^*\bar K^* contribution is close to phase space; it peaks at 2.6 GeV and is very different from KKˉK^{*}\bar{K^{*}}.Comment: 15 pages, 6 figures, 1 table, Submitted to PL

    A Measurement of Psi(2S) Resonance Parameters

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    Cross sections for e+e- to hadons, pi+pi- J/Psi, and mu+mu- have been measured in the vicinity of the Psi(2S) resonance using the BESII detector operated at the BEPC. The Psi(2S) total width; partial widths to hadrons, pi+pi- J/Psi, muons; and corresponding branching fractions have been determined to be Gamma(total)= (264+-27) keV; Gamma(hadron)= (258+-26) keV, Gamma(mu)= (2.44+-0.21) keV, and Gamma(pi+pi- J/Psi)= (85+-8.7) keV; and Br(hadron)= (97.79+-0.15)%, Br(pi+pi- J/Psi)= (32+-1.4)%, Br(mu)= (0.93+-0.08)%, respectively.Comment: 8 pages, 6 figure

    Measurements of the Mass and Full-Width of the ηc\eta_c Meson

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    In a sample of 58 million J/ψJ/\psi events collected with the BES II detector, the process J/ψγηc\psi\to\gamma\eta_c is observed in five different decay channels: γK+Kπ+π\gamma K^+K^-\pi^+\pi^-, γπ+ππ+π\gamma\pi^+\pi^-\pi^+\pi^-, γK±KS0π\gamma K^\pm K^0_S \pi^\mp (with KS0π+πK^0_S\to\pi^+\pi^-), γϕϕ\gamma \phi\phi (with ϕK+K\phi\to K^+K^-) and γppˉ\gamma p\bar{p}. From a combined fit of all five channels, we determine the mass and full-width of ηc\eta_c to be mηc=2977.5±1.0(stat.)±1.2(syst.)m_{\eta_c}=2977.5\pm1.0 ({stat.})\pm1.2 ({syst.}) MeV/c2c^2 and Γηc=17.0±3.7(stat.)±7.4(syst.)\Gamma_{\eta_c} = 17.0\pm3.7 ({stat.})\pm7.4 ({syst.}) MeV/c2c^2.Comment: 9 pages, 2 figures and 4 table. Submitted to Phys. Lett.
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