Anomalous dip observed in intensity autocorrelation function as an inherent nature of single-photon emitters

We report the observation of an anomalous antibunching dip in intensity autocorrelation function with photon correlation measurements on a single-photon emitter (SPE). We show that the anomalous dip observed is a manifestation of quantum nature of SPEs. Taking population dynamics in a quantum two-level system into account correctly, we redefine intensity autocorrelation function. This is of primary importance for precisely evaluating the lowest-level probability of multiphoton generation in SPEs toward realizing versatile pure SPEs for quantum information and communication.Comment: 10 pages including 3 figire

A Cooper pair light emitting diode

We demonstrate Cooper-pair's drastic enhancement effect on band-to-band radiative recombination in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode and dramatically accelerate the photon generation rates of a light emitting diode in the optical-fiber communication band. Cooper pairs are the condensation of electrons at a spin-singlet quantum state and this condensation leads to the observed enhancement of the electric-dipole transitions. Our results indicate the possibility to open up new interdisciplinary fields between superconductivity and optoelectronics.Comment: 5 pages (4 figures

Two-photon interference and coherent control of single InAs quantum dot emissions in an Ag-embedded structure

We have recently reported the successful fabrication of bright single-photon sources based on Ag-embedded nanocone structures that incorporate InAs quantum dots. The source had a photon collection efficiency as high as 24.6%. Here we show the results of various types of photonic characterizations of the Ag-embedded nanocone structures that confirm their versatility as regards a broad range of quantum optical applications. We measure the first-order autocorrelation function to evaluate the coherence time of emitted photons, and the second-order correlation function, which reveals the strong suppression of multiple photon generation. The high indistinguishability of emitted photons is shown by the Hong-Ou-Mandel-type two-photon interference. With quasi-resonant excitation, coherent population flopping is demonstrated through Rabi oscillations. Extremely high single-photon purity with a $g^{(2)}$(0) value of 0.008 is achieved with $\pi$-pulse quasi-resonant excitation.Comment: 15 pages, 6 figure

Electron effective mass and mobility in heavily doped n-GaAsN probed by Raman scattering

We investigate inelastic light scattering by longitudinal optic phonon-plasmon coupled modes LOPCMs in a series of heavily Se-doped, n-type GaAs1−xNx epilayers with x 0.4%. We perform a line shape analysis of the LOPCM spectra to estimate the optical effective mass, mopt , and the scattering time of the conduction electrons in GaAsN. We use these results to evaluate an effective carrier mobility for our samples. The values thus obtained, which we compare with measured electron Hall mobilities, indicate that the x-dependence of the mobility in GaAs1−xNx is dominated by the scattering time, rather than by the variation of the electron effective mass. The Raman analysis yields mopt values that are lower than those obtained from the band anticrossing model. © 2008 American Institute of Physics.This work is supported by the Spanish Government Projects MAT 2004-0664 and MAT2007-63617, and Ramon y Cajal Program and the EPSRC, United Kingdom. 1M. Henini, Dilute Nitride Semiconductors Elsevier Science, AmsterdamPeer reviewe

Instrucció 17/2020 del gerent de la UAB per la qual es fixen el criteris d'aplicació de les mesures recollides a la Resolució SLT/2875/2020, de 12 de novembre, per la qual es prorroguen i es modifiquen les mesures en matèria de salut pública per a la contenció del brot epidèmic de la pandèmia de COVID-19 al territori de Catalunya

Per tal de facilitar el compliment del contingut de la Resolució SLT/2875/2020, de 12 de novembre i per raons de seguretat jurídica i, per tal també de garantir el funcionament dels serveis als campus UAB, resulta necessari determinar els criteris l'aplicació i l'abast de les mesures establertes, en la referida resolució

Transport properties of nitrogen doped p‐gallium selenide single crystals

Nitrogen doped gallium selenide single crystals are studied through Hall effect and photoluminescence measurements in the temperature ranges from 150 to 700 K and from 30 to 45 K, respectively. The doping effect of nitrogen is established and room temperature resistivities as low as 20 Ω cm are measured. The temperature dependence of the hole concentration can be explained through a single acceptor‐single donor model, the acceptor ionization energy being 210 meV, with a very low compensation rate. The high quality of nitrogen doped GaSe single crystals is confirmed by photoluminescence spectra exhibiting only exciton related peaks. Two phonon scattering mechanisms must be considered in order to give quantitative account of the temperature dependence of the hole mobility: scattering by 16.7 meV A′1 homopolar optical phonons with a hole‐phonon coupling constant g2=0.115 and scattering by 31.5 meV LO polar phonon with a hole Fröhlich constant αh⊥[email protected]

Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system

Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites, n-type and p-type diluted magnetic semiconductors (DMS) as well as in quantum wells of n-type DMS. Here, we report on magnetostransport studies of Mn modulation-doped InAs quantum wells, which reveal a magnetic field driven and bias voltage dependent insulator-to-metal transition with abrupt and hysteretic changes of resistance over several orders of magnitude. These phenomena coexist with the quantised Hall effect in high magnetic fields. We show that the exchange coupling between a hole and the parent Mn acceptor produces a magnetic anisotropy barrier that shifts the spin relaxation time of the bound hole to a 100 s range in compressively strained quantum wells. This bistability of the individual Mn acceptors explains the hysteretic behaviour while opening prospects for information storing and processing. At high bias voltage another bistability, caused by the overheating of electrons10, gives rise to abrupt resistance jumps