Effects of Sr addition on crystallinity and optical absorption edges in ternary semiconducting silicide Ba1-xSrxSi2

Polycrystalline Ba1-xSrxSi2 films with the Sr composition x varying from 0 to 0.77 were grown on transparent fused silica substrates by molecular beam epitaxy, and the effects of Sr addition on the indirect optical absorption edge Eedge were investigated. It was found that the Eedge value increases almost linearly with increasing x and reached approximately 1.40 eV when x was 0.52. When x>0.6, the Eedge value almost saturates, and the formation of homogeneous Ba1-xSrxSi2 films became difficult. Phase separation was observed for x=0.77

Magnetoresistance characteristics of Fe3Si/CaF2/Fe3Si heterostructures grown on Si(111) by molecular beam epitaxy

AbstractFe3Si/CaF2/Fe3Si magnetic tunnel junctions (MTJs) have been investigated to demonstrate the tunnel magnetoresistance effects. We fabricated Fe3Si(20 nm)/CaF2(2 nm)/Fe3Si(15 nm) heterostructures epitaxially on a Si(111) substrate by molecular beam epitaxy. The current-voltage characteristics for the MTJs measured at room temperature (RT) were well fitted to Simmons’ equation. The fitting yields the barrier height φ=2.5 eV and the barrier thickness d=1.26 nm. The magnetoresistance ratio for the MTJs were approximately 0.28% under a bias voltage of 20 mV at RT

Multilayer graphene on insulator formed by Co-induced layer exchange

The direct synthesis of multilayer graphene (MLG) on arbitrary substrates is essential for incorporating carbon wirings and heat spreaders into electronic devices. Here, we applied the metal-induced layer exchange (MILE) technique, developed for group-IV semiconductors, to a sputtered amorphous carbon (a-C) thin film using Co as a catalyst. MLG was formed on a SiO2 substrate at 800 °C for 10 min; however, it disappeared during wet etching for removing Co. This behavior was attributed to the small contact area between MLG and SiO2 caused by the deformation of the Co layer during annealing. By preparing the Co layer at 200 °C, its thermal stability was improved, resulting in the synthesis of MLG on the substrate through MILE. Raman measurements indicated good crystal quality of the MLG compared with that obtained by conventional metal-induced solid-phase crystallization. MILE was thus proven to be useful not only for group-IV semiconductors but also for carbon materials on insulators

Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0–1) on an insulator by Al-induced layer exchange

A composition tunable Si1-xGex alloy has a wide range of applications, including in electronic and photonic devices. We investigate the Al-induced layer exchange (ALILE) growth of amorphous Si1-xGex on an insulator. The ALILE allowed Si1-xGex to be large grained (> 50 μm) and highly (111)-oriented (> 95%) over the whole composition range by controlling the growth temperature (≤ 400 °C). From a comparison with conventional solid-phase crystallization, we determined that such characteristics of the ALILE arose from the low activation energy of nucleation and the high frequency factor of lateral growth. The Si1-xGex layers were highly p-type doped, whereas the process temperatures were low, thanks to the electrically activated Al atoms with the amount of solid solubility limit. The electrical conductivities approached those of bulk single crystals within one order of magnitude. The resulting Si1-xGex layer on an insulator is useful not only for advanced SiGe-based devices but also for virtual substrates, allowing other materials to be integrated on three-dimensional integrated circuits, glass, and even a plastic substrate