Half-life Limit of 19Mg

A search for 19Mg was performed using projectile fragmentation of a 150 MeV/nucleon 36Ar beam. No events of 19Mg were observed. From the time-of-flight through the fragment separator an upper limit of 22 ns for the half-life of 19Mg was established

Influence of GaInP ordering on the electronic quality of concentrator solar cells

The ordering phenomenon produces a reduction in the band gap of the GaInP material. Though a drawback for many optoelectronic applications, ordering can be used as an additional degree of material and device engineering freedom. The performance of the record efficiency GaInP/GaAs/Ge multijunction solar cells depends on the quality and design of the GaInP top cell, which can be affected also by ordering. The tradeoff existing between band gap and minority carrier properties, and the possibility of creating a back surface field (BSF) structure based on an order–disorder GaInP heterostructure makes the study of the ordering appealing for solar cell applications. In this work, the ordering dependency with the growth conditions and substrate orientation is studied. The results obtained are presented to enrich and extend the data available in the literature. Then the properties of order–disorder GaInP heterostructures are assessed by using them as BSF in GaInP concentrator solar cells. The external quantum efficiency (EQE) shows a good behavior of these BSF layers, but unexpectedly poor electronic quality in the active layers. Although the exact origin of this problem remains to be known, it is attributed to traps introduced by the ordered/disordered domains matrix or growth native defects. EQE measurements with bias light show a recovery of the minority carrier properties, presumably due to the saturation of the traps

Simplicity of eigenvalues in Anderson-type models

We show almost sure simplicity of eigenvalues for several models of Anderson-type random Schr\"odinger operators, extending methods introduced by Simon for the discrete Anderson model. These methods work throughout the spectrum and are not restricted to the localization regime. We establish general criteria for the simplicity of eigenvalues which can be interpreted as separately excluding the absence of local and global symmetries, respectively. The criteria are applied to Anderson models with matrix-valued potential as well as with single-site potentials supported on a finite box.Comment: 20 page

Global Bounds for the Lyapunov Exponent and the Integrated Density of States of Random Schr\"odinger Operators in One Dimension

In this article we prove an upper bound for the Lyapunov exponent $\gamma(E)$ and a two-sided bound for the integrated density of states $N(E)$ at an arbitrary energy $E>0$ of random Schr\"odinger operators in one dimension. These Schr\"odinger operators are given by potentials of identical shape centered at every lattice site but with non-overlapping supports and with randomly varying coupling constants. Both types of bounds only involve scattering data for the single-site potential. They show in particular that both $\gamma(E)$ and $N(E)-\sqrt{E}/\pi$ decay at infinity at least like $1/\sqrt{E}$. As an example we consider the random Kronig-Penney model.Comment: 9 page

Photometry of VS0329+1250: A New, Short-Period SU Ursae Majoris Star

Time-resolved CCD photometry is presented of the recently-discovered (V~15 at maximum light) eruptive variable star in Taurus, which we dub VS0329+1250. A total of ~20 hr of data obtained over six nights reveals superhumps in the light curves, confirming the star as a member of the SU UMa class of dwarf novae. The superhumps recur with a mean period of 0.053394(7) days (76.89 min), which represents the shortest superhump period known in a classical SU UMa star. A quadratic fit to the timings of superhump maxima reveals that the superhump period was increasing at a rate given by dP/dt ~ (2.1 +/- 0.8) x 10^{-5} over the course of our observations. An empirical relation between orbital period and the absolute visual magnitude of dwarf novae at maximum light, suggests that VS0329+1250 lies at a distance of ~1.2 +/- 0.2 kpc.Comment: V2 - The paper has been modified to incorporate the referee's comments, and has now been accepted for publication in the PASP. The most significant change is that we are now able to confirm that the superhump period was increasing during the course of our observation

Detection of orbital and superhump periods in Nova V2574 Ophiuchi (2004)

We present the results of 37 nights of CCD unfiltered photometry of nova V2574 Oph (2004) from 2004 and 2005. We find two periods of 0.14164 d (~3.40 h) and 0.14773 d (~3.55 h) in the 2005 data. The 2004 data show variability on a similar timescale, but no coherent periodicity was found. We suggest that the longer periodicity is the orbital period of the underlying binary system and that the shorter period represents a negative superhump. The 3.40 h period is about 4% shorter than the orbital period and obeys the relation between superhump period deficit and binary period. The detection of superhumps in the light curve is evidence of the presence of a precessing accretion disk in this binary system shortly after the nova outburst. From the maximum magnitude - rate of decline relation, we estimate the decay rate t_2 = 17+/-4 d and a maximum absolute visual magnitude of M_Vmax = -7.7+/-1.7 mag.Comment: 6 pages, 6 figures, 2 .sty files, AJ accepted, minor change to one of reference

Low lying spectrum of weak-disorder quantum waveguides

We study the low-lying spectrum of the Dirichlet Laplace operator on a randomly wiggled strip. More precisely, our results are formulated in terms of the eigenvalues of finite segment approximations of the infinite waveguide. Under appropriate weak-disorder assumptions we obtain deterministic and probabilistic bounds on the position of the lowest eigenvalue. A Combes-Thomas argument allows us to obtain so-called 'initial length scale decay estimates' at they are used in the proof of spectral localization using the multiscale analysis.Comment: Accepted for publication in Journal of Statistical Physics http://www.springerlink.com/content/0022-471

Structural investigation of MOVPE-Grown GaAs on Ge by X-ray techniques

The selection of appropriate characterisation methodologies is vital for analysing and comprehending the sources of defects and their influence on the properties of heteroepitaxially grown III-V layers. In this work we investigate the structural properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates – (100) with 6⁰ offset towards – under various growth conditions. Synchrotron X-ray topography (SXRT) is employed to investigate the nature of extended linear defects formed in GaAs epilayers. Other X-ray techniques, such as reciprocal space mapping (RSM) and triple axis ω-scans of (00l)-reflections (l = 2, 4, 6) are used to quantify the degree of relaxation and presence of antiphase domains (APDs) in the GaAs crystals. The surface roughness is found to be closely related to the size of APDs formed at the GaAs/Ge heterointerface, as confirmed by X-ray diffraction (XRD), as well as atomic force microscopy (AFM), and transmission electron microscopy (TEM)

Structural investigation of MOVPE-Grown GaAs on Ge by X-ray techniques

The selection of appropriate characterisation methodologies is vital for analysing and comprehending the sources of defects and their influence on the properties of heteroepitaxially grown III-V layers. In this work we investigate the structural properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates – (100) with 6⁰ offset towards – under various growth conditions. Synchrotron X-ray topography (SXRT) is employed to investigate the nature of extended linear defects formed in GaAs epilayers. Other X-ray techniques, such as reciprocal space mapping (RSM) and triple axis ω-scans of (00l)-reflections (l = 2, 4, 6) are used to quantify the degree of relaxation and presence of antiphase domains (APDs) in the GaAs crystals. The surface roughness is found to be closely related to the size of APDs formed at the GaAs/Ge heterointerface, as confirmed by X-ray diffraction (XRD), as well as atomic force microscopy (AFM), and transmission electron microscopy (TEM)

Condensation of Excitons in Cu2O at Ultracold Temperatures: Experiment and Theory

We present experiments on the luminescence of excitons confined in a potential trap at milli-Kelvin bath temperatures under cw-excitation. They reveal several distinct features like a kink in the dependence of the total integrated luminescence intensity on excitation laser power and a bimodal distribution of the spatially resolved luminescence. Furthermore, we discuss the present state of the theoretical description of Bose-Einstein condensation of excitons with respect to signatures of a condensate in the luminescence. The comparison of the experimental data with theoretical results with respect to the spatially resolved as well as the integrated luminescence intensity shows the necessity of taking into account a Bose-Einstein condensed excitonic phase in order to understand the behaviour of the trapped excitons.Comment: 41 pages, 23 figure