Dark states of single NV centers in diamond unraveled by single shot NMR

The nitrogen-vacancy (NV) center in diamond is supposed to be a building block for quantum computing and nanometer scale metrology at ambient conditions. Therefore, precise knowledge of its quantum states is crucial. Here, we experimentally show that under usual operating conditions the NV exists in an equilibrium of two charge states (70% in the expected negative (NV-) and 30% in the neutral one (NV0)). Projective quantum non-demolition measurement of the nitrogen nuclear spin enables the detection even of the additional, optically inactive state. The nuclear spin can be coherently driven also in NV0 (T1 ~ 90 ms and T2 ~ 6 micro-s).Comment: 4 pages, 3 figure

Work function of few layer graphene covered nickel thin films measured with Kelvin probe force microscopy

Few layer graphene and graphite are simultaneously grown on a similar to 100 nm thick polycrystalline nickel film. The work function of few layer graphene/Ni is found to be 4.15 eV with a variation of 50 meV by local measurements with Kelvin probe force microscopy. This value is lower than the work function of free standing graphene due to peculiar electronic structure resulting from metal 3d-carbon 2p(pi) hybridization. (C) 2016 AIP Publishing LLC

Crystal structure of polymeric carbon nitride and the determination of its process-temperature-induced modifications

Based on the arrangement of two-dimensional 'melon', we construct a unit cell for polymeric carbon nitride (PCN) synthesized via thermal polycondensation, whose theoretical diffraction powder pattern includes all major features measured in x-ray diffraction. With the help of this unit cell, we describe the process-temperature-induced crystallographic changes in PCN that occur within a temperature interval between 510 and 610 °C. We also discuss further potential modifications of the unit cell for PCN. It is found that both triazine- and heptazine-based g-C3N4 can only account for minor phases within the investigated synthesis products

Charge Generation and Selective Separation at PbS Quantum Dot Metal Oxide Interfaces

Charge separation and transfer at the interface between layers of oleic acid capped PbS quantum dots QDs and Titanium and Indium Tin oxide TiO2 and ITO films were investigated by surface photovoltage SPV measurements. Photoluminescence PL measurements were performed in order to check for excitonic transitions and determine the QD band gaps. The QDs diameter of 4.2 nm and 5.0 nm were estimated by using the PL band gaps and the theoretical equation derived by Wang et al. [J. Chem. Phys. 87 1987 7315]. The SPV spectra of the PbS QDs TiO2 system reveal a positive charge on the PbS film surface and show three distinguished regions which demonstrate i the charge separation across QDs, ii the electron injection from QDs into TiO2 and iii the fundamental absorption in TiO2. The on set of the electron injection depends on the QD size QD band gap it shifts to lower photon energies for lower QD dimensions for higher QD band gaps . Thus, a better conduction band alignment is achieved in the latter case. In contrast to PbS QDs TiO2, the SPV spectra of the PbS QDs ITO structure reveal the negative charge on PbS surface. Moreover, the charge transfer at this interface is not observed. Instead, the SPV peculiarities in the photon energy range 1.4 3.0 eV point out to trapped holes on the ITO surface state

An optical quasimonomer

A comprehensive investigation of the luminescent properties of carbon nitride polymers, based on tri-s-triazine units, has been conducted. Steady-state temperature- and excitation-power-dependent as well as time-resolved measurements with near-UV excitation (λ=325 nm and 405 nm) yield strong photoluminescence, covering the visible spectrum. The spectral, thermal, and temporal features of the photoluminescence can be satisfactorily described by the excitation and radiative recombination of molecular excitons, localized at single tri-s-triazine units. The discussed model is in accordance with the recently reported absorption features of carbon nitride polymers. Thus, from the point of view of optical spectroscopy, the material effectively behaves as a monomer

Formation of the physical vapor deposited CdS Cu In,Ga Se2 interface in highly efficient thin film solar cells

We report on the buffer absorber interface formation in highly efficient 14.5 , AM1.5 ZnO CdS Cu In,Ga Se2 solar cells with a physical vapor deposited CdS buffer. For Se decapped Cu In,Ga Se2 CIGSe absorbers we observe sulfur passivation of the CIGSe grain boundaries during CdS growth and at the interface a thermally stimulated formation of a region with a higher band gap than that of the absorber bulk, determining the height of the potential barrier at the CdS CIGSe interface. For air exposed CIGSe samples the grain boundary passivation is impeded by a native oxide adsorbate layer at the CIGSe surface determining the thermal stability of the potential barrier heigh

On mesogranulation, network formation and supergranulation

We present arguments which show that in all likelihood mesogranulation is not a true scale of solar convection but the combination of the effects of both highly energetic granules, which give birth to strong positive divergences (SPDs) among which we find exploders, and averaging effects of data processing. The important role played by SPDs in horizontal velocity fields appears in the spectra of these fields where the scale $\sim$4 Mm is most energetic; we illustrate the effect of averaging with a one-dimensional toy model which shows how two independent non-moving (but evolving) structures can be transformed into a single moving structure when time and space resolution are degraded. The role of SPDs in the formation of the photospheric network is shown by computing the advection of floating corks by the granular flow. The coincidence of the network bright points distribution and that of the corks is remarkable. We conclude with the possibility that supergranulation is not a proper scale of convection but the result of a large-scale instability of the granular flow, which manifests itself through a correlation of the flows generated by SPDs.Comment: 10 pages, 11 figures, to appear in Astronomy and Astrophysic

Regularly arranged indium islands on glass/molybdenum substrates upon femtosecond laser and physical vapor deposition processing

A bottom-up approach is presented for the production of arrays of indium islands on a molybdenum layer on glass, which can serve as micro-sized precursors for indium compounds such as copper-indium-gallium-diselenide used in photovoltaics. Femtosecond laser ablation of glass and a subsequent deposition of a molybdenumfilm or direct laser processing of the molybdenumfilm both allow the preferential nucleation and growth of indium islands at the predefined locations in a following indium-based physical vapor deposition(PVD) process. A proper choice of laser and deposition parameters ensures the controlled growth of indium islands exclusively at the laser ablated spots. Based on a statistical analysis, these results are compared to the non-structured molybdenumsurface, leading to randomly grown indium islands after PVD

A complementary neutron and anomalous x-ray diffraction study

Distinguishing the scattering contributions of isoelectronic atomic species by means of conventional x-ray- and/or electron diffraction techniques is a difficult task. Such a problem occurs when determining the crystal structure of compounds containing different types of atoms with equal number of electrons. We propose a new structural model of Cu(InxGa1−x)3Se5 which is valid for the entire compositional range of the CuIn3Se5–CuGa3Se5 solid solution. Our model is based on neutron and anomalous x-ray diffraction experiments. These complementary techniques allow the separation of scattering contributions of the isoelectronic species Cu+ and Ga3+, contributing nearly identically in monoenergetic x-ray diffraction experiments. We have found that CuIII3Se5 (III=In,Ga) in its room temperature near-equilibrium modification exhibits a modified stannite structure (space group I4¯2m). Different occupation factors of the species involved, Cu+, In3+, Ga3+, and vacancies have been found at three different cationic positions of the structure (Wyckoff sites 2a, 2b, and 4d) depending on the composition of the compound. Significantly, Cu+ does not occupy the 2b site for the In-free compound, but does for the In-containing case. Structural parameters, including lattice constants, tetragonal distortions, and occupation factors are given for samples covering the entire range of the CuIn3Se5–CuGa3Se5 solid solution. At the light of the result, the denotation of Cu-poor 1:3:5 compounds as chalcopyrite-related materials is only valid in reference to their composition