Quantum dots in microcavities: from single spins to engineered states of light

A single self-assembled semiconductor quantum dot in a high-finesse optical microcavity - the subject of this thesis - is an interesting quantum-mechanical system for future quantum applications. For instance, this system allows trapping of an extra electron and thus can serve as a spin quantum memory, or enables high-fidelity and high-rate single-photon production. We investigate several aspects in this thesis:First, the operation and manipulation of the system is achieved using resonant laser spectroscopy. This requires filtering out of the relatively strong excitation laser, which is often done using the cross-polarization technique. This approach, however, is complicated in optical setups by spin-orbit coupling of light at the beamsplitter. We experimentally firstly explore this effect in a cryogenic optical microscope and demonstrate its importance for quantum dot based single photon sources. Next, we develop a unique setup with a cold permanent magnet and firstly realise trapping of a single electron in our particular quantum dot - cavity devices and show spin control. Then we show how true single photons from our device can be used to create novel quantum states of light. First, we investigate theoretically single photon addition to coherent laser light including several experimental imperfections - we find an universal behaviour of the photon correlation function. Finally, we demonstrate entanglement of several consecutive photons by repeatedly using Hong-Ou-Mandel quantum interference of single photons with a photon quantum memory in the form of an optical delay loop. We show that this results in quantum states of light that have Poissonian photon statistics like laser light - therefore we call them artificial coherent states - but also that they are more complicated than ordinary coherent states and contain multi-photon quantum entanglement in the form of linear cluster states, a potential resource for universal quantum computing.Quantum Matter and Optic

Dimension-dependent phenomenological model of excitonic electric dipole in InGaAs quantum dots

Quantum Matter and Optic

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and time-resolved photoluminescence depending on temperature. Studying this material system is fundamental in view of the ongoing implementation of such QDs for nano memory devices. The structures studied in this work include a single QD layer, QDs overgrown by a GaSb capping layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow to discern the common spectral features around the emission energy of 1.8 eV related to the GaAs quantum well and the GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. Moreover, based on the considerable tunability of the QDs depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor platforms, due to the feasibility of a nearly defect-free growth of GaP on Si. Finally, our analysis confirms the nature of the pumping power blue-shift of emission originating from the charged-background induced changes of the wavefunction spatial distribution

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of Γ and L quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of k ⋅ p theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50-meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method

Artificial coherent states of light by multi-photon interference in a single-photon stream

Coherent optical states consist of a quantum superposition of different photon number (Fock) states, but because they do not form an orthogonal basis, no photon number states can be obtained from it by linear optics. Here we demonstrate the reverse, by manipulating a random continuous single-photon stream using quantum interference in an optical Sagnac loop, we create engineered quantum states of light with tunable photon statistics, including approximate weak coherent states. We demonstrate this experimentally using a true single-photon stream produced by a semiconductor quantum dot in an optical microcavity, and show that we can obtain light with $g^{(2)}(0)\rightarrow1$ in agreement with our theory, which can only be explained by quantum interference of at least 3 photons. The produced artificial light states are, however, much more complex than coherent states, containing quantum entanglement of photons, making them a resource for multi-photon entanglement.Comment: 6 pages + supplemental materia

Light emission from direct band gap germanium containing split-interstitial defects

The lack of useful and cost-efficient group-IV direct band gap light emitters still presents the main bottleneck for complementary metal-oxide semiconductor-compatible short-distance data transmission, single-photon emission, and sensing based on silicon photonics. Germanium, a group-IV element like Si, is already widely used in silicon fabs. While the energy band gap of Ge is intrinsically indirect, we predict that the insertion of Ge-Ge split-[110] interstitials into crystalline Ge can open up a direct band gap transmission path. Here, we calculate from first principles the band structure and optical emission properties of Ge, Sb, and Sn split-[110] interstitials in bulk and low-dimensional Ge at different doping concentrations. Two types of electronic states provide the light-emission enhancement below the direct band gap of Ge: a hybridized L-Γ state at the Brillouin zone center and a conduction band of Δ band character that couples to a raised valence band along the Γ-X direction. Majority carrier introduced to the system through doping can enhance light emission by saturation of nonradiative paths. Ge-Sn split interstitials in Ge shift the top of the valence band towards the Γ-X direction and increase the Γ character of the L-Γ state, which results in a shift to longer emission wavelengths. Key spectral regions for datacom and sensing applications can be covered by applying quantum confinement in defect-enhanced Ge quantum dots for an emission wavelength shift from the midinfrared to the telecom regime.FWN – Publicaties zonder aanstelling Universiteit Leide

YY1 haploinsufficiency causes an intellectual disability syndrome featuring transcriptional and chromatin dysfunction

Yin and yang 1 (YY1) is a well-known zinc-finger transcription factor with crucial roles in normal development and malignancy. YY1 acts both as a repressor and as an activator of gene expression. We have identified 23 individuals with de novo mutations or deletions of YY1 and phenotypic features that define a syndrome of cognitive impairment, behavioral alterations, intrauterine growth restriction, feeding problems, and various congenital malformations. Our combined clinical and molecular data define "YY1 syndrome" as a haploinsufficiency syndrome. Through immunoprecipitation of YY1-bound chromatin from affected individuals' cells with antibodies recognizing both ends of the protein, we show that YY1 deletions and missense mutations lead to a global loss of YY1 binding with a preferential retention at high-occupancy sites. Finally, we uncover a widespread loss of H3K27 acetylation in particular on the YY1-bound enhancers, underscoring a crucial role for YY1 in enhancer regulation. Collectively, these results define a clinical syndrome caused by haploinsufficiency of YY1 through dysregulation of key transcriptional regulators.Michele Gabriele, Anneke T. Vulto-van Silfhout, Pierre-Luc Germain, Alessandro Vitriolo, Raman Kumar, Evelyn Douglas, Eric Haan, Kenjiro Kosaki, Toshiki Takenouchi, Anita Rauch, Katharina Steindl, Eirik Frengen, Doriana Misceo, Christeen Ramane J. Pedurupillay, Petter Stromme, Jill A. Rosenfeld, Yunru Shao, William J. Craigen, Christian P. Schaaf, David Rodriguez-Buritica, Laura Farach, Jennifer Friedman, Perla Thulin, Scott D. McLean, Kimberly M. Nugent, Jenny Morton, Jillian Nicholl, Joris Andrieux, Asbjørg Stray-Pedersen, Pascal Chambon, Sophie Patrier, Sally A. Lynch, Susanne Kjaergaard, Pernille M. Tørring, Charlotte Brasch-Andersen, Anne Ronan, Arie van Haeringen, Peter J. Anderson, Zöe Powis, Han G. Brunner, Rolph Pfundt, Janneke H.M. Schuurs-Hoeijmakers, Bregje W.M. van Bon, Stefan Lelieveld, Christian Gilissen, Willy M. Nillesen, Lisenka E.L.M. Vissers, Jozef Gecz, David A. Koolen, Giuseppe Testa, Bert B.A. de Vrie

Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots

We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography (APT). The combination of X-STM and APT is a very powerful approach to study semiconductor heterostructures with atomic resolution, which provides detailed structural and compositional information on the system. The rather small QDs are found to be of truncated pyramid shape with a very small top facet and occur in our sample with a very high density of ∼4 × 1011 cm−2. APT experiments revealed that the QDs are GaAs rich with smaller amounts of In and Sb. Finite element (FE) simulations are performed using structural data from X-STM to calculate the lattice constant and the outward relaxation of the cleaved surface. The composition of the QDs is estimated by combining the results from X-STM and the FE simulations, yielding ∼InxGa1 − xAs1 − ySby, where x = 0.25–0.30 and y = 0.10–0.15. Noticeably, the reported composition is in good agreement with the experimental results obtained by APT, previous optical, electrical, and theoretical analysis carried out on this material system. This confirms that the InGaSb and GaAs layers involved in the QD formation have strongly intermixed. A detailed analysis of the QD capping layer shows the segregation of Sb and In from the QD layer, where both APT and X-STM show that the Sb mainly resides outside the QDs proving that Sb has mainly acted as a surfactant during the dot formation. Our structural and compositional analysis provides a valuable insight into this novel QD system and a path for further growth optimization to improve the storage time of the QD-Flash memory devices