Silicon-based thin-film transistors with a high stability

Thin-Film Transistors (TFTs) are widely applied as pixel-addressing devices in large-area electronics, such as active-matrix liquid-crystal displays (AMLCDs) or sensor arrays. Hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiNx:H) are generally used as the semiconductor and the insulator layers, respectively. Commonly, Plasma-Enhanced Chemical Vapor Deposition (PECVD) is used to deposit such films on large glass or plastic substrates at rather low substrate temperatures of 200 - 300oC. Even though TFTs are nowadays used in commercial applications, they need further improvement with respect to a number of issues: Firstly, the stability upon prolonged application of a gate voltage results in a shift of the TFT transfer characteristics. This is explained with the metastability of a-Si:H, namely the defect creation in the amorphous channel. This effect hampers the application of TFTs e.g. in the peripheral driver circuitry of AMLCDs and in the addressing matrix of Organic Light-Emitting Diode (OLED) displays. Secondly, the low deposition rate of the silicon limits the throughput in display fabrication. For a further reduction of the production costs higher deposition rates are crucial. This thesis addresses the development and the study of silicon-based TFTs with a high stability. Therefore, a-Si:H and a-SiNx:H films have been deposited with new techniques, alternative to the commonly used PECVD at a discharge frequency of 13.56 MHz. For Very High Frequency (VHF) PECVD we used frequencies in the range of 13.56 - 70 MHz. Furthermore, we deposited layers by Hot-Wire Chemical Vapor Deposition (HWCVD), utilizing heated tantalum or tungsten filaments to decompose the source-gas molecules catalytically. Hot-wire deposited a-SiNx:H layers were developed to be applied as gate insulator. Furthermore, they are promising for passivation purposes, since no surface damaging ion bombardment is present during the deposition. A proof-of-concept for an All-Hot-Wire TFT with both the a-Si:H and the a-SiNx:H deposited by HWCVD is presented, yielding a considerable field-effect mobility of 0.3 cm2/Vs. The stability of various a-Si:H TFTs with either plasma a-SiNx:H or thermally grown SiO2 as the gate insulator was investigated by applying constant gate-bias stress of 25 V at temperatures of 20 - 110oC and durations of 10 - 105s. We determined the kinetics of defect-creation in the amorphous silicon by measuring the threshold-voltage shift and merging the data obtained at different stressing temperatures and times to one data set as a function of the thermalization energy. This scheme was described by Deane et al.. The kinetics follow a stretched hyperbola, which results from dispersive defect creation with an exponential distribution of activation energies. A least-squares fit yields two parameters: kBT0 is the slope of the barrier distribution, with values of (65 ? 3) meV for all TFTs in this stability study. The second parameter, Ea, is interpreted as the mean activation energy for defect creation. We used it for a comparison of the stability of various TFTs. For VHF-PECVD a-Si:H TFTs, values for Ea were around 0.92 eV and are found to be correlated with the mechanical stress in silicon films: A high value for Ea, thus a high stability, is related to a low compressive stress. For HWCVD a-Si:H the stability clearly increases with increasing deposition temperatures. The highest value being around 1.03 eV is obtained for het-Si:H, deposited at 510?C. From these results we concluded that the stability of a-Si:H is determined by the grade of network relaxation. Higher deposition temperatures result in a more efficient relaxation of the amorphous network. This can be associated with a higher medium-range order. In the case of the plasma-deposited a-Si:H films deposited at one temperature, the relation between Ea and mechanical stress may be a secondary effect, with the mechanical stress being related to the network ordering. In conclusion, HWCVD appears to be an ideal method to deposit highly stable a-Si:H TFTs, since a rather high temperature is combined with an effective hydrogenation, resulting in a-Si:H film with a low and stable defect density

Dynamics of Threshold Voltage Shifts in Organic and Amorphous Silicon Field-Effect Transistors

No abstrac

Zinc oxide films grown by galvanic deposition from 99% metals basis zinc nitrate electrolyte

The use of relatively low purity zinc nitrate for electrochemical deposition of compact ZnO films is attractive for large scale production because of the cost saving potential. ZnO films were grown on SnO2:F and magnetron sputtered ZnO:Al templates using a three electrode potentiostatic system in galvanic mode. The electrolyte consisted of a 0.1 M zinc nitrate solution (either 99.998% or 99% purity) and 1 mM aluminium nitrate for extrinsic doping, when required. Moderate deposition rates of up to 0.9 nm s−1 were achieved on ZnO:Al templates with lower rates of up to 0.5 nm s−1 on SnO2:F templates. Observation of SEM images of the films revealed a wall-like morphology whose lateral thickness (parallel to the substrate) reduced as aluminium was added to the system either in the electrolyte or from the substrate. However, pre- deposition activation of the template by applying a negative voltage (approximately −2 V) allowed the growth of compact films even for the low purity electrolyte. The optical band gap energy of intrinsically doped films was lower than that of the Al doped films. The composite electrical conductivity of all the films studied, as inferred from sheet resistance and Hall effect measurements of the ZnO/template stacks was much less than that of the uncoated templates. A strong E2 (high) mode at around 437 cm−1 was visible in the Raman spectra for most films confirming the formation of ZnO. However, both the Raman modes and XRD reflections associated with wurtzite ZnO diminished for the Al doped films indicating a high level of mainly oxygen related defects. Based on these data, further studies are underway to improve the doping efficiency of aluminium, the crystalline structure and thus the conductivity of such films

Nanocrystalline n Type Silicon Front Surface Field Layers From Research to Industry Applications in Silicon Heterojunction Solar Cells

Nanocrystalline silicon and silicon oxide nc Si Ox H layers grown by plasma enhanced chemical vapor deposition PECVD have shown low parasitic absorption and excellent contact properties when implemented as n type front surface field FSF contact in rear junction silicon heterojunction SHJ solar cells [1 3]. In this contribution we present results from the successful process transfer from the lab at PVcomB at the Helmholtz Zentrum Berlin HZB , to the industrial pilot line at Meyer Burger Germany GmbH MBG . Conversion efficiencies gt; 22.5 were demonstrated on SHJ cell 4 cm2 [2, 3]. The excellent cell performance in the lab and the potential to reduce parasitic absorption in the front stack by using nc SiOx H motivated the process transfer from HZB to MBG. Initial cross processing experiments on 244 cm2 wafers showed the benefit of using nc Si H as FSF layer. We here also emphasize the role of the Si texture on a fast nc Si H nucleation. After cross processing experiments a successful transfer of the nc Si H process and fine tuning resulted in a median cell efficiency of 23.4 . This is in the same range as the MGB reference on 244 cm2 cells, noteworthy, at the same throughput. Currently work is ongoing to further improve the optical performance of the cells by adding oxygen CO

Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate

Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO 2. Amorphous silicon devices exhibited mobility values of 1.3 cm 2 V - 1 s - 1, which are very high taking into account the amorphous nature of the material. Nanocrystalline transistors presented mobility values as high as 11.5 cm 2 V - 1 s - 1 and resulted in low threshold voltage shift (∼ 0.5 V)

Interdigitated back contact silicon heterojunction solar cells Towards an industrially applicable structuring method

We report on the investigation and comparison of two different processing approaches for interdigitated back contacted silicon heterojunction solar cells our photolithography based reference procedure and our newly developed shadow mask process. To this end, we analyse fill factor losses in different stages of the fabrication process. We find that although comparably high minority carrier lifetimes of about 4 ms can be observed for both concepts, the shadow masked solar cells suffer yet from poorly passivated emitter regions and significantly higher series resistance. Approaches for addressing the observed issues are outlined and first solar cell results with efficiencies of about 17 and 23 for shadow masked and photolithographically structured solar cells, respectively, are presente

Material properties of high mobility TCOs and application to solar cells

The benefit of achieving high electron mobilities in transparent conducting oxides TCOs is twofold they first exhibit superior optical properties, especially in the NIR spectral range, and secondly their low resistivity enables the usage of thinner films. Remarkably high mobilities can be obtained in Al doped zinc oxide by post deposition annealing under a protective layer. The procedure has not only shown to increase mobility, but also strongly reduces sub bandgap absorption. Extensive optical, electrical and structural characterization is carried out in the films in order to clarify the microscopic origins of the changes in material properties. While the annealing of defect states, most likely deep acceptors, seems clear, earlier results also suggest some influence of grain boundaries. Tailing, on the contrary, seems to be linked to extended defects. In application to a Si H c Si H thin film solar cells the films have already shown to increase spectral response. When reducing the film thickness, the main challenge is to provide a suitable light trapping scheme. Normally this is achieved by a wet chemical etching step in diluted HCl, which provides a surface structure with suitable light scattering properties. Therefore a TCO independent light scattering approach using textures glass was applied in conjunction with the high mobility zinc oxide. The substrate enables the use of very thin TCO layers with a strongly reduced parasitic absorptio

Optimization of PECVD process for ultra thin tunnel SiOx film as passivation layer for silicon heterojunction solar cells

Ultra thin silicon oxide a SiOx H films have been grown by means of plasma enhanced chemical vapor deposition PECVD to replace the standard hydrogenated amorphous silicon a Si H passivation layer for silicon heterojunction solar cells to reduce parasitic absorption. Additionally, silicon oxide surfaces are well known as superior substrates for the nucleation enhancement for nanocrystalline silicon doped films. Symmetrical passivation samples were fabricated with variable a SiOx H layers with a thickness of 10 1.5 nm and characterized after several annealing steps 25 650 C . The best value reached so far on lt;100 gt; oriented Si wafers is implied open circuit voltage of 686 mV and minority carrier lifetime of 1.6 ms after annealing at 300 C. Such values were found to be reproducible even for ultra thin a SiOx H layers 1.5 n

Optimized immobilization of ZnO:Co electrocatalysts realizes 5% efficiency in photoassisted splitting of water

Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.Correction: There is an error in Fig. 8 of the manuscript. The correct Fig. 8 is shown in the additional file. To cite the Correction refer to DOI:10.1039/c6ta90030e.Organic solvents with varied electrophoretic mobility have been employed for deposition of nanocrystalline ZnO: Co particles onto fluorinated tin oxide supports. Evaluation of the electrochemical activity for the oxygen evolution reaction proves a clear solvent-dependence with highest activity upon deposition from acetonitrile and lowest activity upon deposition from ethanol. Analysis of the resulting layer thickness and density attributes the improved electrochemical activity of acetonitrile-prepared samples to larger film thicknesses with lower film densities, i.e. to films with higher porosity. The findings suggest that the ZnO: Co films represent an initially nanocrystalline system where the catalytic activity is predominantly confined to a thin surface region rather than to comprise the entire volume. Closer inspection of this surface region proves successive in operando transformation of the nanocrystalline to an amorphous phase during evolution of oxygen. Furthermore, less active but highly transparent ZnO: Co phases, prepared from ethanol-containing suspensions, can be successfully employed in a stacking configuration with a low-cost triple-junction solar cell. Thereby, a solar-to-hydrogen efficiency of 5.0% in splitting of water at pH 14 could be realized. In contrast, highly light-absorbing acetonitrile/acetone-prepared samples limit the efficiency to about 1%, demonstrating thus the decisive influence of the used organic solvent upon electrophoretic deposition. Stability investigations over several days finally prove that the modular architecture, applied here, represents an attractive approach for coupling of highly active electrocatalysts with efficient photovoltaic devices.BMBF, 03IS2071F, Light2Hydrogen - Energien für die ZukunftDFG, SPP 1613, Regenerativ erzeugte Brennstoffe durch lichtgetriebene Wasserspaltung: Aufklärung der Elementarprozesse und Umsetzungsperspektiven auf technologische Konzept