146 research outputs found

    Signatures for Black Hole production from hadronic observables at the Large Hadron Collider

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    The concept of Large Extra Dimensions (LED) provides a way of solving the Hierarchy Problem which concerns the weakness of gravity compared with the strong and electro-weak forces. A consequence of LED is that miniature Black Holes (mini-BHs) may be produced at the Large Hadron Collider in p+p collisions. The present work uses the CHARYBDIS mini-BH generator code to simulate the hadronic signal which might be expected in a mid-rapidity particle tracking detector from the decay of these exotic objects if indeed they are produced. An estimate is also given for Pb+Pb collisions.Comment: 11 pages, 9 figures, ISHIP 2006 conference proceedin

    Mini black holes at the LHC : discovery through di-jet suppression, mono-jet emission and a supersonic boom in the quark-gluon plasma in ALICE, ATLAS and CMS

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    We examine experimental signatures of TeV-mass black hole formation in heavy ion collisions at the LHC. We find that the black hole production results in a complete disappearance of all very high p_T (> 500 GeV) back-to-back correlated di-jets of total mass M > M_f ~ 1 TeV. We show that the subsequent Hawking-decay produces multiple hard mono-jets and discuss their detection. We study the possibility of cold black hole remnant (BHR) formation of mass ~ M_f and the experimental distinguishability of scenarios with BHRs and those with complete black hole decay. Finally we point out that a Heckler-Kapusta-Hawking plasma may form from the emitted mono-jets. In this context we present new simulation data of Mach shocks and of the evolution of initial conditions until the freeze-out

    Antibaryons bound in nuclei

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    We study the possibility of producing a new kind of nuclear systems which in addition to ordinary nucleons contain a few antibaryons (B = p, , etc.). The properties of such systems are described within the relativistic mean field model by employing G parity transformed interactions for antibaryons. Calculations are first done for infinite systems and then for finite nuclei from 4He to 208Pb. It is demonstrated that the presence of a real antibaryon leads to a strong rearrangement of a target nucleus resulting in a significant increase of its binding energy and local compression. Noticeable e ects remain even after the antibaryon coupling constants are reduced by factor 3 4 compared to G parity motivated values. We have performed detailed calculations of the antibaryon annihilation rates in the nuclear environment by applying a kinetic approach. It is shown that due to significant reduction of the reaction Q values, the in medium annihilation rates should be strongly suppressed leading to relatively long lived antibaryon nucleus systems. Multi nucleon annihilation channels are analyzed too. We have also estimated formation probabilities of bound B + A systems in pA reactions and have found that their observation will be feasible at the future GSI antiproton facility. Several observable signatures are proposed. The possibility of producing multi quark antiquark clusters is discussed. PACS numbers: 25.43.+t, 21.10.-k, 21.30.Fe, 21.80.+

    Suppression of dilepton production at finite baryon density

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    We study dilepton production from a quark-gluon plasma of given energy density at finite quark chemical potential μ and find that the dilepton production rate is a strongly decreasing function of μ. Therefore, the signal to background ratio of dileptons from a plasma created in a heavy-ion collision may decrease significantly

    Enhanced binding and cold compression of nuclei due to admixture of antibaryons

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    We discuss the possibility of producing a new kind of nuclear system by putting a few antibaryons inside ordinary nuclei. The structure of such systems is calculated within the relativistic mean field model assuming that the nucleon and antinucleon potentials are related by the G parity transformation. The presence of antinucleons leads to decreasing vector potential and increasing scalar potential for the nucleons. As a result, a strongly bound system of high density is formed. Due to the significant reduction of the available phase space the annihilation probability might be strongly suppressed in such systems

    Thermopower and conductivity of aerosol deposited BaFe1-xTaxO3-ÎŽ films

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    The thermopower, also known as Seebeck coefficient, is an important parameter to determine constants for defect chemical models of semiconductor materials since it is a measure for the charge carrier concentration. The Seebeck coefficient does not depend on the geometry of the material, like the often investigated conductivity. BaFe0.7Ta0.3O3-Ύ is known as a temperature independent conductometric oxygen sensor material with perovskite crystal structure. The present work considers the thermopower as well as the electrical conductivity of BaFe1-xTaxO3-Ύ for x in the range of 0.1 to 0.45 (BFTx). Seebeck coefficient and conductivity were measured simultaneously between 400 and 850°C under varying oxygen partial pressures from 10-2 to 1 bar. BFTx fine powders have been prepared by conventional mixed-oxide route and were calcined at 1350°C. Crystal structure and phase purity were investigated by X-ray diffraction. BFTx thick-films have been successfully deposited by the novel Aerosol Deposition Method (ADM) at room temperature on a special transducer. This well designed transducer includes four platinum electrodes and two gold-platinum thermocouples. Both, thermopower and electrical conductivity, of samples with tantalum contents between x=0.2-0.3 show almost no temperature dependency but depend strongly on the oxygen partial pressure in the temperature range from 700 to 850°C. Results are shown for sample BFT20 in figure 1 and figure 2. All samples have a positive Seebeck coefficient and no n-p-type transition was observed in the investigated oxygen partial pressure range. In contrast to the electrical conductivity, the Seebeck coefficient of all samples decreases with increasing oxygen partial pressure. An initial defect chemical model of BFTx will be presented in this study as well. Please click Additional Files below to see the full abstract

    Influence of Oxygen Partial Pressure during Processing on the Thermoelectric Properties of Aerosol-Deposited CuFeO2

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    In the field of thermoelectric energy conversion, oxide materials show promising potential due to their good stability in oxidizing environments. Hence, the influence of oxygen partial pressure during synthesis on the thermoelectric properties of Cu-Delafossites at high temperatures was investigated in this study. For these purposes, CuFeO2 powders were synthetized using a conventional mixed-oxide technique. X-ray diffraction (XRD) studies were conducted to determine the crystal structures of the delafossites associated with the oxygen content during the synthesis. Out of these powders, films with a thickness of about 25 ”m were prepared by the relatively new aerosol-deposition (AD) coating technique. It is based on a room temperature impact consolidation process (RTIC) to deposit dense solid films of ceramic materials on various substrates without using a high-temperature step during the coating process. On these dense CuFeO2 films deposited on alumina substrates with electrode structures, the Seebeck coefficient and the electrical conductivity were measured as a function of temperature and oxygen partial pressure. We compared the thermoelectric properties of both standard processed and aerosol deposited CuFeO2 up to 900 °C and investigated the influence of oxygen partial pressure on the electrical conductivity, on the Seebeck coefficient and on the high temperature stability of CuFeO2. These studies may not only help to improve the thermoelectric material in the high-temperature case, but may also serve as an initial basis to establish a defect chemical model

    Effect of Oxygen Partial Pressure on the Phase Stability of Copper-Iron Delafossites at Elevated Temperatures

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    Oxide-based materials are promising candidates for use in high temperature thermoelectric generators. While their thermoelectric performance is inferior to commonly used thermoelectrics, oxides are environmentally friendly and cost-effective. In this study, Cu-based delafossites (CuFeO2), a material class with promising thermoelectric properties at high temperatures, were investigated. This work focuses on the phase stability of CuFeO2 with respect to the temperature and the oxygen partial pressure. For this reason, classical material characterization methods, such as scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction, were combined in order to elucidate the phase composition of delafossites at 900 °C at various oxygen partial pressures. The experimentally obtained results are supported by the theoretical calculation of the Ellingham diagram of the copper–oxygen system. In addition, hot-stage X-ray diffraction and long-term annealing tests of CuFeO2 were performed in order to obtain a holistic review of the phase stability of delafossites at high temperatures and varying oxygen partial pressure. The results support the thermoelectric measurements in previous publications and provide a process window for the use of CuFeO2 in thermoelectric generators

    Pyroelectricity of silicon-doped hafnium oxide thin films

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    Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found. This work investigates the impact of Si doping on the phase composition and ferro- as well as pyroelectric properties of thin film capacitors. Dynamic hysteresis measurements and the field-free Sharp-Garn method were used to correlate the reported orthorhombic phase fractions with the remanent polarization and pyroelectric coefficient. Maximum values of 8.21 ”C cm−2 and −46.2 ”C K−1 m−2 for remanent polarization and pyroelectric coefficient were found for a Si content of 2.0 at%, respectively. Moreover, temperature-dependent measurements reveal nearly constant values for the pyroelectric coefficient and remanent polarization over the temperature range of 0 °C to 170 °C, which make the material a promising candidate for IR sensor and energy conversion applications beyond the commonly discussed use in memory applications
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