Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays

Selective area thermal etching (SATE) of gallium nitride is a simple subtractive process for creating novel device architectures and improving the structural and optical quality of III-nitride-based devices. In contrast to plasma etching, it allows, for example, the creation of enclosed features with extremely high aspect ratios without introducing ion-related etch damage. We report how SATE can create uniform and organized GaN nanohole arrays from c-plane and (11–22) semi-polar GaN in a conventional MOVPE reactor. The morphology, etching anisotropy and etch depth of the nanoholes were investigated by scanning electron microscopy for a broad range of etching parameters, including the temperature, the pressure, the NH3 flow rate and the carrier gas mixture. The supply of NH3 during SATE plays a crucial role in obtaining a highly anisotropic thermal etching process with the formation of hexagonal non-polar-faceted nanoholes. Changing other parameters affects the formation, or not, of non-polar sidewalls, the uniformity of the nanohole diameter, and the etch rate, which reaches 6 µm per hour. Finally, the paper discusses the SATE mechanism within a MOVPE environment, which can be applied to other mask configurations, such as dots, rings or lines, along with other crystallographic orientations

Impact of inductively coupled plasma etching conditions on the formation of semi-polar ( 11 2 ¯ 2 ) and non-polar ( 11 2 ¯ 0 ) GaN nanorods

The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have been performed, in comparison to wet etching. In this paper, we investigate the formation and morphology of semi-polar (112¯2) and non-polar (112¯0) GaN nanorods using inductively coupled plasma (ICP) etching. The impact of gas chemistry, pressure, temperature, radio-frequency (RF) and ICP power and time are explored. A dominant chemical component is found to have a significant impact on the morphology, being impacted by the polarity of the planes. In contrast, increasing the physical component enables the impact of crystal orientation to be minimized to achieve a circular nanorod profile with inclined sidewalls. These conditions were obtained for a small percentage of chlorine (Cl2) within the Cl2 + argon (Ar) plasma combined with a low pressure. Damage to the crystal was reduced by lowering the direct current (DC) bias through a reduction of the RF power and an increase of the ICP power

Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE

Coalescence of GaN over arrays of GaN nanopyramids has important device applications and has been achieved on nano-imprint lithographically patterned GaN/sapphire substrates using metal organic vapour phase epitaxy. Spatially and spectrally resolved cathdoluminescence (CL) from such coalesced layers are studied in detail. The observed redshift of the GaN band edge emission with increasing electron beam depth of maximum CL into the coalesced layer is discussed in relation to a carrier-induced peak shift, likely due to Si out-diffusion from the mask material into the GaN. Depth-resolved CL measurements are used to quantify the redshift in terms of bandgap renormalization and strain effects. CL maps showing the GaN near band edge peak energy distribution reveal micron-scale domain-like variations in peak energy and are attributed to the effects of local strain

Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes

Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite difference time domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process

Tidal resource extraction in the Pentland Firth, UK : Potential impacts on flow regime and sediment transport in the Inner Sound of Stroma

Large-scale extraction of power from tidal streams within the Pentland Firth is expected to be underway in the near future. The Inner Sound of Stroma in particular has attracted significant commercial interest. To understand potential environmental impacts of the installation of a tidal turbine array a case study based upon the Inner Sound is considered. A numerical computational fluid dynamics model, Fluidity, is used to conduct a series of depth-averaged simulations to investigate velocity and bed shear stress changes due to the presence of idealised tidal turbine arrays. The number of turbines is increased from zero to 400. It is found that arrays in excess of 85 turbines have the potential to affect bed shear stress distributions in such a way that the most favourable sites for sediment accumulation migrate from the edges of the Inner Sound towards its centre. Deposits of fine gravel and coarse sand are indicated to occur within arrays of greater than 240 turbines with removal of existing deposits in the shallower channel margins also possible. The effects of the turbine array may be seen several kilometres from the site which has implications not only on sediment accumulation, but also on the benthic fauna

AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

We present overgrowth of nano-patterned sapphire with different offcut angles by metalorganic vapor phase epitaxy. Hexagonal arrays of nano-pillars were prepared via Displacement Talbot Lithography and dry-etching. 6.6 µm crack-free and fully coalesced AlN was grown on such substrates. Extended defect analysis comparing X-ray diffraction, electron channeling contrast imaging and selective defect etching revealed a threading dislocation density of about 109 cm−2. However, for c-plane sapphire offcut of 0.2° towards m direction the AlN surface shows step bunches with a height of 10 nm. The detrimental impact of these step bunches on subsequently grown AlGaN multi-quantum-wells is investigated by cathodoluminescence and transmission electron microscopy. By reducing the sapphire offcut to 0.1° the formation of step bunches is successfully suppressed. On top of such a sample an AlGaN-based UVC LED heterostructure is realized emitting at 265 nm and showing an emission power of 0.81 mW at 20 mA (corresponds to an external quantum efficiency of 0.86%)

AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

We present overgrowth of nano-patterned sapphire with different offcut angles by metalorganic vapor phase epitaxy. Hexagonal arrays of nano-pillars were prepared via Displacement Talbot Lithography and dry-etching. 6.6 µm crack-free and fully coalesced AlN was grown on such substrates. Extended defect analysis comparing X-ray diffraction, electron channeling contrast imaging and selective defect etching revealed a threading dislocation density of about 109 cm-2. However, for c-plane sapphire offcut of 0.2° towards m direction the AlN surface shows step bunches with a height of 10 nm. The detrimental impact of these step bunches on subsequently grown AlGaN multi-quantum-wells is investigated by cathodoluminescence and transmission electron microscopy. By reducing the sapphire offcut to 0.1° the formation of step bunches is successfully suppressed. On top of such a sample an AlGaN-based UVC LED heterostructure is realized emitting at 265 nm and showing an emission power of 0.81 mW at 20 mA (corresponds to an external quantum efficiency of 0.86 %)

Search for the Rare Decay KL --> pi0 ee

The KTeV/E799 experiment at Fermilab has searched for the rare kaon decay KL--> pi0ee. This mode is expected to have a significant CP violating component. The measurement of its branching ratio could support the Standard Model or could indicate the existence of new physics. This letter reports new results from the 1999-2000 data set. One event is observed with an expected background at 0.99 +/- 0.35 events. We set a limit on the branching ratio of 3.5 x 10^(-10) at the 90% confidence level. Combining the results with the dataset taken in 1997 yields the final KTeV result: BR(KL --> pi0 ee) < 2.8 x 10^(-10) at 90% CL.Comment: 4 pages, three figure

Measurements Of The Decay Kl → E+e-μ+μ-

Several 132 KL → e+e- μ+ μ- events were observed from the 1997 and 1999 runs of the KTeV experiments, with an estimated background of 0.8 events. In the first measurement of the parameter α using this decay mode, it was found that α=-1.59±0.37. No evidence was found for CP-violating contributions to the KLγ*γ* interaction.9014141801/1141801/5Wolfenstein, L., (1983) Phys. Rev. Lett., 51, p. 1945Belanger, G., Geng, C.Q., (1991) Phys. Rev. D, 43, p. 140Buras, A.J., Fleischer, R., (1998) Advanced Ser. Direct. High Energy Phys., 15, p. 65Uy, Z.E.S., (1991) Phys. Rev. D, 43, p. 802D'Ambrosio, G., Isidori, G., Portolès, J., (1998) Phys. Lett. B, 423, p. 385Alavi-Harati, A., (2001) Phys. Rev. Lett., 87, p. 71801. , KTeV CollaborationAlavi-Harati, A., (2001) Phys. Rev. Lett., 86, p. 5425. , KTeV CollaborationUy, Z.E.S., (2002) Eur. Phys. J. C, 23, p. 113Alavi-Harati, A., (2001) Phys. Rev. Lett., 87, p. 111802. , KTeV CollaborationHamm, J.C., (2002), Ph.D. thesis, The University of Arizona(Fermilab Report No. fERMILAB-THESIS-2002-09)Alavi-Harati, A., (1999) Phys. Rev. Lett., 83, p. 922. , KTeV CollaborationAlavi-Harati, A., (2000) Phys. Rev. D, 61, p. 072006. , KTeV CollaborationBrown, C., (1996) Nucl. Instrum. Methods Phys. Res., Sect. A, 369, p. 248Quinn, G.B., (2000), Ph.D. thesis, The University of ChicagoBarker, A.R., Huang, H., Toale, P.A., Engle, J., hep-ph/0210174Bergström, L., Massó, E., Singer, P., (1983) Phys. Lett., 131 B, p. 229Fanti, V., (1999) Phys. Lett. B, 458, p. 553. , NA48 Collaboratio