Band-Bending at Buried SiO2/Si Interface as Probed by XPS

Cataloged from PDF version of article.X-ray photoelectron spectroscopy is used to probe the photoinduced shifts in the binding energies of Si2p, O1s, and C1s of the SiO2/Si interfaces of a number of samples having oxide and/or thin organic layers on top of p- and n-Si wafers. Whereas the photoinduced shifts, in each and every peak related, vary from 0.2 to 0.5 eV for the p-type samples, the corresponding shifts are substantially smaller (<0.1 eV) for the n-type, regardless of (i) oxidation route (thermal or anodic), (ii) thickness of oxide layer, (iii) nature of organic layer, or (iv) color of three illuminating sources we have used. This leads us to conclude that these particular photoshifts reflect the charge state of the SiO2/Si interface, even in the case of a 20 nm thick oxide, where the interface is buried and cannot be probed directly by XPS

Band-bending at buried SiO2/Si interface as probed by XPS

X-ray photoelectron spectroscopy is used to probe the photoinduced shifts in the binding energies of Si2p, O1s, and C1s of the SiO2/Si interfaces of a number of samples having oxide and/or thin organic layers on top of p- and n-Si wafers. Whereas the photoinduced shifts, in each and every peak related, vary from 0.2 to 0.5 eV for the p-type samples, the corresponding shifts are substantially smaller (&lt;0.1 eV) for the n-type, regardless of (i) oxidation route (thermal or anodic), (ii) thickness of oxide layer, (iii) nature of organic layer, or (iv) color of three illuminating sources we have used. This leads us to conclude that these particular photoshifts reflect the charge state of the SiO2/Si interface, even in the case of a 20 nm thick oxide, where the interface is buried and cannot be probed directly by XPS. © 2013 American Chemical Society

Location and Visualization of Working p-n and/or n-p Junctions by XPS

X-ray photoelectron spectroscopy (XPS) is used to follow some of the electrical properties of a segmented silicon photodetector, fabricated in a p-n-p configuration, during operation under various biasing configurations. Mapping of the binding energy position of Si2p reveals the shift in the position of the junctions with respect to the polarity of the DC bias applied. Use of squared and triangular shaped wave excitations, while recording XPS data, allows tapping different electrical properties of the device under normal operational conditions, as well as after exposing parts of it to harsh physical and chemical treatments. Unique and chemically specific electrical information can be gained with this noninvasive approach which can be useful especially for localized device characterization and failure analyses

Low temperature growth of fully covered single-layer graphene using a CoCu catalyst.

A bimetallic CoCu alloy thin-film catalyst is developed that enables the growth of uniform, high-quality graphene at 750 °C in 3 min by chemical vapour deposition. The growth outcome is found to vary significantly as the Cu concentration is varied, with ∼1 at% Cu added to Co yielding complete coverage single-layer graphene growth for the conditions used. The suppression of multilayer formation is attributable to Cu decoration of high reactivity sites on the Co surface which otherwise serve as preferential nucleation sites for multilayer graphene. X-ray photoemission spectroscopy shows that Co and Cu form an alloy at high temperatures, which has a drastically lower carbon solubility, as determined by using the calculated Co-Cu-C ternary phase diagram. Raman spectroscopy confirms the high quality (ID/IG < 0.05) and spatial uniformity of the single-layer graphene. The rational design of a bimetallic catalyst highlights the potential of catalyst alloying for producing two-dimensional materials with tailored properties

Phase coexistence of multiple copper oxides on AgCu catalysts during ethylene epoxidation

Alloy catalysts under reaction conditions are complex entities. In oxidizing atmospheres, multiple phases can coexist on a catalyst s surface as a result of phase segregation and preferential oxidation. Such a scenario can result in unusual substoichiometric and metastable phases that could play important roles in catalytic processes. For instance, AgCu alloys known to exhibit enhanced epoxide selectivity in partial oxidation of ethylene form an oxide like surface structure under reaction conditions. Under these conditions, copper oxides are stable, while silver oxides are not. Consequently, copper segregates to the alloy s surface and forms an oxide overlayer. Little is known about the structure or function of such overlayers, and it is unknown whether they play an active role in the catalyst s enhanced selectivity. In order to develop a clearer picture of such catalysts, the current work utilizes several in situ spectroscopic and microscopic techniques to examine the copper oxide phases that form when AgCu is exposed to epoxidation conditions. It is found that several forms of oxidic Cu coexist simultaneously on the active catalyst s surface, namely, CuO, Cu2O, and some previously unreported form of oxidized Cu, referred to here as CuxOy. Online product analysis, performed during the in situ spectroscopic measurements, shows that increased epoxide selectivity is correlated with the presence of mixed copper oxidation states and the presence of the CuxOy species. These results support previous theoretical predictions that oxidic copper overlayers on silver play an active role in epoxidation. These results furthermore emphasize the need for in situ spectromicroscopic methods to understand the complexity of alloy catalyst

Chemical exfoliation of MoS2 leads to semiconducting 1T' phase and not the metallic 1T phase

A trigonal phase existing only as small patches on chemically exfoliated few layer, thermodynamically stable 1H phase of MoS2 is believed to influence critically properties of MoS2 based devices. This phase has been most often attributed to the metallic 1T phase. We investigate the electronic structure of chemically exfoliated MoS2 few layered systems using spatially resolved (lesser than 120 nm resolution) photoemission spectroscopy and Raman spectroscopy in conjunction with state-of-the-art electronic structure calculations. On the basis of these results, we establish that the ground state of this phase is a small gap (~90 meV) semiconductor in contrast to most claims in the literature; we also identify the specific trigonal (1T') structure it has among many suggested ones

Dark matter allowed scenarios for Yukawa-unified SO(10) SUSY GUTs

Simple supersymmetric grand unified models based on the gauge group SO(10) require --in addition to gauge and matter unification-- the unification of t-b-\tau Yukawa couplings. Yukawa unification, however, only occurs for very special values of the soft SUSY breaking parameters. We perform a search using a Markov Chain Monte Carlo (MCMC) technique to investigate model parameters and sparticle mass spectra which occur in Yukawa-unified SUSY models, where we also require the relic density of neutralino dark matter to saturate the WMAP-measured abundance. We find the spectrum is characterizd by three mass scales: first/second generation scalars in the multi-TeV range, third generation scalars in the TeV range, and gauginos in the \sim 100 GeV range. Most solutions give far too high a relic abundance of neutralino dark matter. The dark matter discrepancy can be rectified by 1. allowing for neutralino decay to axino plus photon, 2. imposing gaugino mass non-universality or 3. imposing generational non-universality. In addition, the MCMC approach finds 4. a compromise solution where scalar masses are not too heavy, and where neutralino annihilation occurs via the light Higgs h resonance. By imposing weak scale Higgs soft term boundary conditions, we are also able to generate 5. low \mu, m_A solutions with neutralino annihilation via a light A resonance, though these solutions seem to be excluded by CDF/D0 measurements of the B_s\to \mu^+\mu^- branching fraction. Based on the dual requirements of Yukawa coupling unification and dark matter relic density, we predict new physics signals at the LHC from pair production of 350--450 GeV gluinos. The events are characterized by very high b-jet multiplicity and a dilepton mass edge around mz2-mz1 \sim 50-75 GeV.Comment: 35 pages with 21 eps figure

Space weather activities of IONOLAB group using TNPGN GPS Network

Characterization and constant monitoring of variability of the ionosphere is of utmost importance for the performance improvement of HF communication, Satellite communication, navigation and guidance systems, Low Earth Orbit (LEO) satellite systems, Space Craft exit and entry into the atmosphere and space weather. Turkish National Permanent GPS Network (TNPGN) is the Reference Station Network of 146 continuously-operating GNSS stations of which are distributed uniformly across Turkey and North Cyprus Turkish Republic since May 2009. IONOLAB group is currently investigating new techniques for space-time interpolation, and automatic mapping of TEC through a TUBITAK research grant. It is utmost importance to develop regional stochastic models for correction of ionospheric delay in geodetic systems and also form a scientific basis for communication link characterization. This study is a brief summary of the efforts of IONOLAB group in monitoring of space weather, and correction of geodetic positioning errors due to ionosphere using TNPGN. © 2011 IEEE