A Transport Analysis of the BEEM Spectroscopy of Au/Si Schottky Barriers

A systematic transport study of the ballistic electron emission microscopy (BEEM) of Au/Si(100) and Au/Si(111) Schottky barriers for different thicknesses of the metal layer and different temperatures is presented. It is shown that the existing experimental data are compatible with a recently predicted bandstructure-induced non-forward electron propagation through the Au(111) layer.Comment: 5 pages, Latex-APS, 1 postscript figure, http://www.icmm.csic.es/Pandres/pedro.htm. Phys. Stat. Sol. (b) (to appear), HCIS-10 Conf, Berlin 199

Exciton formation and relaxation in GaAs epilayers

Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved photoluminescence techniques. It is found that the time evolution of the free exciton luminescence, nonresonantly excited at low temperature and low intensity, is extremely slow, with a rise time of the order of 1 ns and a decay time of several ns. Simulations based on Monte Carlo solution of the set of coupled Boltzmann-like equations for free carriers and excitons show a nice agreement with the experimental data, and suggest a dominant role played by acoustic phonons in the exciton relaxation

Ultrafast terahertz probes of transient conducting and insulating phases in an electron–hole gas

Many-body systems in nature exhibit complexity and self-organization arising from seemingly simple laws. The long-range Coulomb interaction between electrical charges generates a plethora of bound states in matter, ranging from the hydrogen atom to complex biochemical structures. Semiconductors form an ideal laboratory for studying many-body interactions of quasi-particles among themselves and with lattice vibrations and light. Oppositely charged electron and hole quasi-particles can coexist in an ionized but correlated plasma, or form bound hydrogen-like pairs called excitons which strongly affect physical properties. The pathways between such states however remain elusive in near-visible optical experiments that detect a subset of excitons with vanishing center-of-mass momenta. In contrast, transitions between internal exciton levels which occur in the far-infrared at terahertz (10 s) frequencies are in dependent of this restriction suggesting their use as a novel pro be of pair dynamics. Here, we employ an ultrafast terahertz probe to directly investigate the dynamical interplay of optically-generated excitons and unbound electron-hole pairs in GaAs quantum wells. Our observations witness an unexpected quasi-instantaneous excitonic enhancement, reveal formation of insulating excitons on a hundred picosecond timescale and manifest conditions under which excitonic populations prevail

Phonon-assisted exciton formation and relaxation in GaAs/AlxGa1-xAs quantum wells

A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presented. The theoretical approach is based on a Monte Carlo simulation of the coupled free-carrier and exciton dynamics, and includes various mechanisms contributing to exciton formation and relaxation. Our investigation clarifies the ori,ain of excitonic luminescence in time-resolved experiments. In particular, we address the problem of the relative efficiencies of exciton formation assisted by either LO phonons or acoustic phonons, respectively