Instrument development, data collection, and characteristics of practices, staff, and measures in the Improving Quality of Care in Diabetes (iQuaD) Study

Peer reviewedPublisher PD

Non-bonded interactions in cyclobutane-thiones

Using UVPES and electronic spectral data the presence of an interaction between thd 1,3-thiocarbonyl groups in Image has been identified. EHT calculations also predict such an interaction. Presence of weak interaction between 1,3-carbonyl and thiocarbonyl groups in Image has been inferred from electronic absorption and emission spectra

An Experimentally Based Description of the Ground-state Wavefunction for Two Weakly Coupled Electrons by Photoelectron Spectroscopy and Magnetic Susceptibility Measurements

It is possible to extract values for the transfer energy, t, and the Coulomb interaction, U, in hydrogen-like systems from a combination of photoelectron and magnetic data, as both the form of the photoelectron spectrum and the exchange splitting are determined by these quantities. This procedure is used to evaluate the ground-state wavefunction for the two weakly coupled Ti 3d electrons in (C10H8)(C5H5)2Ti2Cl2.

Time-resolved surface photovoltage measurements at n-type photovoltaic surfaces: Si(111) and ZnO(101¯0)

The time-resolved change in the surface potential upon photoexcitation has been measured in two n-type photovoltaics, Si (111) 7×7 and ZnO (101[over ¯]0), using two different laser pump-synchrotron x-ray probe methodologies. Taken together, these experiments allow the dynamics of the surface photovoltage (SPV) to be monitored over timescales of subnanoseconds to milliseconds. The timescales for the photoinduced change in the SPV are dramatically different in the two samples, with measured SPV decay time constants of 6.6 μs for Si and up to 1.2 ms (dependent on surface oxygen concentration) for ZnO. The carrier dynamics at the Si (111) 7×7 surface are well modeled by a self-decelerating relaxation model involving the recombination of carriers by thermionic emission across the surface depletion layer on nanosecond timescales. In the case of ZnO (101[over ¯]0), a persistent photoconductivity (PPC) is observed, which is influenced by oxygen annealing conditions during sample preparation. Persistent photoconductivity is also observed when the surface is illuminated with subband-gap (405 nm) radiation, revealing that defect states approximately 340 meV above the valence band edge are directly associated with the PPC. We demonstrate that, under the conditions of our experiment, PPC mediated by these defects dominates over the oxygen photodesorption mechanism. These observations are consistent with the hypothesis that ionized oxygen vacancy states are responsible for PPC in ZnO. Time-resolved surface photovoltage measurements at n-type photovoltaic surfaces: Si(111) and ZnO(101[over ¯]0) - ResearchGate. Available from: http://www.researchgate.net/publication/258782678_Time-resolved_surface_photovoltage_measurements_at_n-type_photovoltaic_surfaces_Si(111)_and_ZnO(101over_0)