A first-principles approach to closing the "10-100 eV gap" for charge-carrier thermalization in semiconductors

The present work is concerned with studying accurately the energy-loss processes that control the thermalization of hot electrons and holes that are generated by high-energy radiation in wurtzite GaN, using an ab initio approach. Current physical models of the nuclear/particle physics community cover thermalization in the high-energy range (kinetic energies exceeding ~100 eV), and the electronic-device community has studied extensively carrier transport in the low-energy range (below ~10 eV). However, the processes that control the energy losses and thermalization of electrons and holes in the intermediate energy range of about 10-100 eV (the "10-100 eV gap") are poorly known. The aim of this research is to close this gap, by utilizing density functional theory (DFT) to obtain the band structure and dielectric function of GaN for energies up to about 100 eV. We also calculate charge-carrier scattering rates for the major charge-carrier interactions (phonon scattering, impact ionization, and plasmon emission), using the DFT results and first-order perturbation theory. With this information, we study the thermalization of electrons starting at 100 eV using the Monte Carlo method to solve the semiclassical Boltzmann transport equation. Full thermalization of electrons and holes is complete within ~1 and 0.5 ps, respectively. Hot electrons dissipate about 90% of their initial kinetic energy to the electron-hole gas (90 eV) during the first ~0.1 fs, due to rapid plasmon emission and impact ionization at high energies. The remaining energy is lost more slowly as phonon emission dominates at lower energies (below ~10 eV). During the thermalization, hot electrons generate pairs with an average energy of ~8.9 eV/pair (11-12 pairs per hot electron). Additionally, during the thermalization, the maximum electron displacement from its original position is found to be on the order of 100 nm.Comment: 23 pages, 20 figures. This LaTex file uses RevTex4.2 from AP

SYSTEMS ENGINEERING AND ASSURANCE MODELING (SEAM): A WEB-BASED SOLUTION FOR INTEGRATED MISSION ASSURANCE

We present an overview of the Systems Engineering and Assurance Modeling (SEAM) platform, a web-browser-based tool which is designed to help engineers evaluate the radiation vulnerabilities and develop an assurance approach for electronic parts in space systems. The SEAM framework consists of three interconnected modeling tools, a SysML compatible system description tool, a Goal Structuring Notation (GSN) visual argument tool, and Bayesian Net and Fault Tree extraction and export tools. The SysML and GSN sections also have a coverage check application that ensures that every radiation fault identified on the SysML side is also addressed in the assurance case in GSN. The SEAM platform works on space systems of any degree of radiation hardness but is especially helpful for assessing radiation performance in systems with commercial-off-the-shelf (COTS) electronic components

Connecting Mission Profiles and Radiation Vulnerability Assessment

Radiation vulnerability assessment early in spacecraft development is cheaper and faster than in late development phases. RGENTIC and SEAM are two software platforms that can be coupled to provide this type of early assessment. Specifically, RGENTIC is a tool that outputs descriptions of radiation risks based on a selected mission environment and the system’s electronic part portfolio, while SEAM models how radiation-induced faults in electronic parts propagate through a system. In this work, we propose a spacecraft evaluation flow where RGENTIC’s outputs, which are radiation vulnerabilities of electronic parts for a given mission, become inputs to SEAM, resulting in an automatic part-type template palette presented to users so that they can easily begin modeling the occurrence and propagation of radiation-induced faults in their spacecraft. In this context, fault propagation modeling shows how radiation effects impact the spacecraft’s electronics. The interface between these platforms can be streamlined through the creation of a SEAM global part-type library with templates based on radiation effects in part-type families such as sensors, processors, voltage regulators, and so forth. Several of the part-types defined in RGENTIC have been integrated into SEAM templates. Ultimately, all 66+ part-types from the RGENTIC look-up table will be included in the SEAM global part library. Once accomplished, the part templates can be used to populate each project-specific part library in SEAM, ensuring all RGENTIC’s part-types are represented, and the radiation effects are consistent between the two. The harmonization process between RGENTIC and SEAM begins as follows: designers input a detailed knowledge of their system and mission into RGENTIC, which then outputs a generic part-type list that associates each part-type with potential radiation concerns. The list is then downloaded in a SEAM-readable file, which SEAM uses to populate the initially blank project with the part templates that correspond to RGENTIC’s output. The final product is a system fault model using a project-specific radiation effect part library. The radiation effects considered in the part library are associated with three categories of radiation-environment issues: single event effects (SEE), total ionizing dose (TID), and displacement damage dose (DDD). An example part-type is the discrete LED, which has been functionally decomposed into input power and output light. It has a single possible radiation-induced fault that is associated with DDD, which causes degraded brightness and is observed on the output. Overall, designers will benefit from a coordination of these two tools because it simplifies the initial definition of the project in SEAM. This is especially the case for new users, since the necessary radiation models for their parts are available before modeling commences. Furthermore, starting from a duplicate of an existing project decreases the amount of time and effort required to develop project-specific models. Incorporating RGENTIC’s table of part-types resolves these issues and provides a streamlined process for creating system radiation fault models. Consequently, spacecraft designers can identify radiation problems early in the design cycle and fix them with lower cost and less effort than in later design stages

Molecular Dynamics Simulations of Heavy Ion Induced Defects in SiC Schottky Diodes

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation.Peer reviewe

Methodology for Correlating Historical Degradation Data to Radiation-Induced Degradation System Effects in Small Satellites

When constructing a system-level fault tree to demonstrate device-to-system level radiation degradation, reliability engineers need relevant, device-level failure probabilities to incorporate into reliability models. Deriving probabilities from testing can be expensive and time-consuming, especially if the system is complex. This methodology offers an alternative means of deriving device-level failure probabilities. It uses Bayesian analysis to establish links between historical radiation datasets and failure probabilities. A demonstration system for this methodology is provided, which is a TID response of a linear voltage regulator at 100 krad(SiO2). Data fed into the Bayesian model is derived from literature on the components found within a linear voltage regulator. An example is presented with data pertaining to the device’s bipolar junction transistor (BJT)’s gain degradation factor (GDF). Kernel density estimation is used to provide insight into the dataset’s general distribution shape. This guides the engineer into picking the appropriate distribution for device-level Bayesian analysis. Failure probabilities generated from the Bayesian analysis are incorporated into a LTspice model to derive a system failure probability (using Monte Carlo) of the regulator’s output. In our demonstration system, a 96.5% likelihood of system degradation was found in the assumed environment

Application of RADSAFE to Model Single Event Upset Response of a 0.25 micron CMOS SRAM

The RADSAFE simulation framework is described and applied to model Single Event Upsets (SEU) in a 0.25 micron CMOS 4Mbit Static Random Access Memory (SRAM). For this circuit, the RADSAFE approach produces trends similar to those expected from classical models, but more closely represents the physical mechanisms responsible for SEU in the SRAM circuit

Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak

A 1 GeV/u Fe-56 ion beam allows for true 90deg tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the GCR flux energy peak

Heavy Ion Current Transients in SiGe HBTs

Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates