Optimally robust shortcuts to population inversion in two-level quantum systems

We examine the stability versus different types of perturbations of recently proposed shortcuts-to-adiabaticity to speed up the population inversion of a two-level quantum system. We find optimally robust processes using invariant based engineering of the Hamiltonian. Amplitude noise and systematic errors require different optimal protocols.Comment: 17 pages, 7 figure

Ceramic matrix composite turbine engine vane

A vane has an airfoil shell and a spar within the shell. The vane has an outboard shroud at an outboard end of the shell and an inboard platform at an inboard end of the shell. The shell includes a region having a depth-wise coefficient of thermal expansion and a second coefficient of thermal expansion transverse thereto, the depth-wise coefficient of thermal expansion being greater than the second coefficient of thermal expansion

Surface electronic properties of undoped InAlN alloys

The variation in surface electronic properties of undoped c-plane InxAl1−xN alloys has been investigated across the composition range using a combination of high-resolution x-ray photoemission spectroscopy and single-field Hall effect measurements. For the In-rich alloys, electron accumulation layers, accompanied by a downward band bending, are present at the surface, with a decrease to approximately flatband conditions with increasing Al composition. However, for the Al-rich alloys, the undoped samples were found to be insulating with approximate midgap pinning of the surface Fermi level observed

Fast transport of Bose-Einstein condensates

We propose an inverse method to accelerate without final excitation the adiabatic transport of a Bose Einstein condensate. The method, applicable to arbitrary potential traps, is based on a partial extension of the Lewis-Riesenfeld invariants, and provides transport protocols that satisfy exactly the no-excitation conditions without constraints or approximations. This inverse method is complemented by optimizing the trap trajectory with respect to different physical criteria and by studying the effect of noise

Compensating point defects in 4He+ -irradiated InN

We use positron annihilation spectroscopy to study 2 MeV 4He+ -irradiated InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapor deposition. In GaN, the Ga vacancies act as important compensating centers in the irradiated material, introduced at a rate of 3600 cm exp −1. The In vacancies are introduced at a significantly lower rate of 100cm−1, making them negligible in the compensation of the irradiation-induced additional n-type conductivity in InN. On the other hand, negative non-open volume defects are introduced at a rate higher than 2000cm exp −1. These defects are tentatively attributed to interstitial nitrogen and may ultimately limit the free-electron concentration at high irradiation fluences.Peer reviewe

Structure of adsorbed Fe on Ni{111}

Using photoelectron diffraction in the scanned energy mode we have established that Fe atoms adsorb in the fcc hollow sites of the Ni{111} surface even at low temperatures. Total-energy calculations had suggested that the hcp hollow sites were more stable

Photoelectron diffraction study of ultrathin Fe films on Cu{111}

Using photoelectron diffraction in the scanned-energy mode we show that at 300 K iron grows pseudomorphically on Cu{111} up to a thickness of about two equivalent monolayers. The Fe-Cu layer separation is 1.99 Å. Above this thickness the film becomes bcc with {110} orientation and is aligned such that the 〈111〉 rows are parallel to the 〈110〉 rows of the fcc{111} surface (Kurdjumov-Sachs orientation). The Fe-Fe first-layer separation is 1.95 Å