Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to $0.3\,\mathrm{meV}$. The gate hysteresis for sweeps covering 5 Coulomb diamonds reveals an energy hysteresis of only $60\mathrm{\mu eV}$ between upwards and downwards sweeps. Charge noise is studied via long-term measurements at the slope of a Coulomb peak revealing potential fluctuations of $\sim 1\,\mu \mathrm{eV}/\mathrm{\sqrt{Hz}}$ at 1\,Hz. This makes h-BN the dielectric with the currently lowest gate hysteresis and lowest low-frequency potential fluctuations reported for low-gap III-V nanowires. The extracted values are similar to state-of-the art quantum dots within Si/SiGe and Si/SiO${_2}$ systems

Andreev reflection at high magnetic fields: Evidence for electron and hole transport in edge states

We have studied magnetotransport in arrays of niobium filled grooves in an InAs/AlGaSb heterostructure. The critical field of up to 2.6 T permits to enter the quantum Hall regime. In the superconducting state, we observe strong magnetoresistance oscillations, whose amplitude exceeds the Shubnikov-de Haas oscillations by a factor of about two, when normalized to the background. Additionally, we find that above a geometry-dependent magnetic field value the sample in the superconducting state has a higher longitudinal resistance than in the normal state. Both observations can be explained with edge channels populated with electrons and Andreev reflected holes.Comment: accepted for Phys Rev Lett, some changes to tex

Superconducting proximity effects in metals with a repulsive pairing interaction

Studies of the superconducting proximity effect in normal conductor/superconductor $(N/S)$ junctions almost universally assume no effective electron-electron coupling in the $N$ region. While such an approximation leads to a simple description of the proximity effect, it is unclear how it could be rigorously justified. We reveal a much more complex picture of the proximity effect in $N/S$ bilayers, where $S$ is a clean s-wave BCS superconductor and $N$ is a simple metal with a repulsive effective electron coupling. We elucidate the proximity effect behavior using a highly accurate method to self-consistently solve the Bogoliubov-deGennes equations. We present our results for a wide range of values of the interface scattering, the Fermi wave vector mismatch, the temperature, and the ratio $g$ of the effective interaction strengths in the $N$ and $S$ region. We find that the repulsive interaction, represented by a negative $g$, strongly alters the signatures of the proximity effect as can be seen in the spatial dependence of the Cooper pair amplitude and the pair potential, as well as in the local density of states near the interface.Comment: 12 pages, including 10 figures. To appear in Phys. Rev.

Electrical current noise of a beam splitter as a test of spin-entanglement

We investigate the spin entanglement in the superconductor-quantum dot system proposed by Recher, Sukhorukov and Loss, coupling it to an electronic beam-splitter. The superconductor-quantum dot entangler and the beam-splitter are treated within a unified framework and the entanglement is detected via current correlations. The state emitted by the entangler is found to be a linear superposition of non-local spin-singlets at different energies, a spin-entangled two-particle wavepacket. Colliding the two electrons in the beam-splitter, the singlet spin-state gives rise to a bunching behavior, detectable via the current correlators. The amount of bunching depends on the relative positions of the single particle levels in the quantum dots and the scattering amplitudes of the beam-splitter. The singlet spin entanglement, insensitive to orbital dephasing but suppressed by spin dephasing, is conveniently quantified via the Fano factors. It is found that the entanglement-dependent contribution to the Fano factor is of the same magnitude as the non-entangled, making an experimental detection feasible. A detailed comparison between the current correlations of the non-local spin-singlet state and other states, possibly emitted by the entangler, is performed. This provides conditions for an unambiguous identification of the non-local singlet spin entanglement.Comment: 13 pages, 8 figures, section on quantification of entanglement adde

Coherent current transport in wide ballistic Josephson junctions

We present an experimental and theoretical investigation of coherent current transport in wide ballistic superconductor-two dimensional electron gas-superconductor junctions. It is found experimentally that upon increasing the junction length, the subharmonic gap structure in the current-voltage characteristics is shifted to lower voltages, and the excess current at voltages much larger than the superconducting gap decreases. Applying a theory of coherent multiple Andreev reflection, we show that these observations can be explained in terms of transport through Andreev resonances.Comment: 4 pages, 4 figure

Nonequilibrium Josephson current in ballistic multiterminal SNS-junctions

We study the nonequilibrium Josephson current in a long two-dimensional ballistic SNS-junction with a normal reservoir coupled to the normal part of the junction. The current for a given superconducting phase difference $\phi$ oscillates as a function of voltage applied between the normal reservoir and the SNS-junction. The period of the oscillations is $\pi \hbar v_F/L$, with $L$ the length of the junction, and the amplitude of the oscillations decays as $V^{-3/2}$ for $eV \gg \hbar v_{F}/L$ and zero temperature. The critical current $I_c$ shows a similar oscillating, decaying behavior as a function of voltage, changing sign every oscillation. Normal specular or diffusive scattering at the NS-interfaces does not qualitatively change the picture.Comment: Proceeding of MS2000, to appear in Physica

Control of Josephson current by Aharonov-Casher Phase in a Rashba Ring

We study the interference effect induced by the Aharonov-Casher phase on the Josephson current through a semiconducting ring attached to superconducting leads. Using a 1D model that incorporates spin-orbit coupling in the semiconducting ring, we calculate the Andreev levels analytically and numerically, and predict oscillations of the Josephson current due to the AC phase. This result is valid from the point contact limit to the long channel length limit, as defined by the ratio of the junction length and the BCS healing length. We show in the long channel length limit that the impurity scattering has no effect on the oscillation of the Josephson current, in contrast to the case of conductivity oscillations in a spin-orbit coupled ring system attached to normal leads where impurity scattering reduces the amplitude of oscillations. Our results suggest a new scheme to measure the AC phase with, in principle, higher sensitivity. In addition, this effect allows for control of the Josephson current through the gate voltage tuned AC phase.Comment: 12pages, 8 figure

Spin relaxation: From 2D to 1D

In inversion asymmetric semiconductors, spin-orbit interactions give rise to very effective relaxation mechanisms of the electron spin. Recent work, based on the dimensionally constrained D'yakonov Perel' mechanism, describes increasing electron-spin relaxation times for two-dimensional conducting layers with decreasing channel width. The slow-down of the spin relaxation can be understood as a precursor of the one-dimensional limit

Ballistic spin-polarized transport and Rashba spin precession in semiconductor nanowires

We present numerical calculations of the ballistic spin-transport properties of quasi-one-dimensional wires in the presence of the spin-orbit (Rashba) interaction. A tight-binding analog of the Rashba Hamiltonian which models the Rashba effect is used. By varying the robustness of the Rashba coupling and the width of the wire, weak and strong coupling regimes are identified. Perfect electron spin-modulation is found for the former regime, regardless of the incident Fermi energy and mode number. In the latter however, the spin-conductance has a strong energy dependence due to a nontrivial subband intermixing induced by the strong Rashba coupling. This would imply a strong suppression of the spin-modulation at higher temperatures and source-drain voltages. The results may be of relevance for the implementation of quasi-one-dimensional spin transistor devices.Comment: 19 pages (incl. 9 figures). To be published in PR

Microscopic nonequilibrium theory of double-barrier Josephson junctions

We study nonequilibrium charge transport in a double-barrier Josephson junction, including nonstationary phenomena, using the time-dependent quasiclassical Keldysh Green's function formalism. We supplement the kinetic equations by appropriate time-dependent boundary conditions and solve the time-dependent problem in a number of regimes. From the solutions, current-voltage characteristics are derived. It is understood why the quasiparticle current can show excess current as well as deficit current and how the subgap conductance behaves as function of junction parameters. A time-dependent nonequilibrium contribution to the distribution function is found to cause a non-zero averaged supercurrent even in the presence of an applied voltage. Energy relaxation due to inelastic scattering in the interlayer has a prominent role in determining the transport properties of double-barrier junctions. Actual inelastic scattering parameters are derived from experiments. It is shown as an application of the microscopic model, how the nature of the intrinsic shunt in double-barrier junctions can be explained in terms of energy relaxation and the opening of Andreev channels.Comment: Accepted for Phys. Rev.