4,434 research outputs found

    Common learning

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    Consider two agents who learn the value of an unknown parameter by observing a sequence of private signals. The signals are independent and identically distributed across time but not necessarily across agents. We show that when each agent's signal space is finite, the agents will commonly learn the value of the parameter, that is, that the true value of the parameter will become approximate common knowledge. The essential step in this argument is to express the expectation of one agent's signals, conditional on those of the other agent, in terms of a Markov chain. This allows us to invoke a contraction mapping principle ensuring that if one agent's signals are close to those expected under a particular value of the parameter, then that agent expects the other agent's signals to be even closer to those expected under the parameter value. In contrast, if the agents' observations come from a countably infinite signal space, then this contraction mapping property fails. We show by example that common learning can fail in this case

    Low Head Power Generation With Bulb Turbines

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    Because of uncertainties, delays, and high costs associated with alternative electric energy sources, many agencies responsible for generation of electrical power are investigating means of replacing or supplementing their existing hydroelectric facilities. In the head range between 10 and 60 feet, the bulb-type generating unit, in which the generator is enclosed in a metal capsule within the water passage, has many advantages, including higher efficiency and lower cost, over other types of turbines. Two of the municipalities in the United States which have recently conducted feasibility studies for installing bulb turbines in their systems are the City of Idaho Falls, Idaho, and the City of Vanceburg, Kentucky. For the City of Idaho Falls, International Engineering Company, Inc. prepared feasibility studies which demonstrated that for 7 MW units installed in existing plants, (I) bulb turbines are more economical than comparable conventional (vertical shaft Kaplan) units, (2) installation of new bulb turbine units is preferable to rehabilitating and/or relocating the existing generating units, and (3) the cost of energy generated by the proposed bulb turbine installations would be less than that from alternative sources of energy. At locations at existing dams on the Ohio River, the Vanceburg Electric Light, Heat and Power System studied installations comprised of 3 - 23 MW bulb turbines per plant and also found that the cost of energy from these facilities would be less than from other sources

    Imaging a 1-electron InAs quantum dot in an InAs/InP nanowire

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    Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an InAs/InP nanowire, using the tip as a movable gate. Images of dot conductance vs. tip position at T = 4.2 K show concentric rings as electrons are added, starting with the first electron. The SPM can locate a dot along a nanowire and individually tune its charge, abilities that will be very useful for the control of coupled nanowire dots

    Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors

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    We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III-V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally-coated nanowires, which we used to produce functional Ω\Omega-gate and gate-all-around structures. These give sub-threshold swings as low as 140 mV/dec and on/off ratios exceeding 10310^3 at room temperature. For the gate-all-around structure, we developed a novel fabrication strategy that overcomes some of the limitations with previous lateral wrap-gate nanowire transistors. Finally, we show that parylene can be deposited over chemically-treated nanowire surfaces; a feature generally not possible with oxides produced by atomic layer deposition due to the surface `self-cleaning' effect. Our results highlight the potential for parylene as an alternative ultra-thin insulator in nanoscale electronic devices more broadly, with potential applications extending into nanobioelectronics due to parylene's well-established biocompatible properties

    InAs nanowire transistors with multiple, independent wrap-gate segments

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    We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favourable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.Comment: 18 pages, 5 figures, In press for Nano Letters (DOI below

    Correlation-induced conductance suppression at level degeneracy in a quantum dot

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    The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance enhancement in the Coulomb blockade region for aligned levels with different spins due to the Kondo effect, a vanishing of the conductance is found at the alignment of levels with equal spins. This conductance suppression appears as a canyon cutting through the web of direct tunneling lines and an enclosed Coulomb blockade region. In the center of the Coulomb blockade region, we observe the predicted correlation-induced resonance, which now turns out to be part of a larger scenario. Our findings are supported by numerical and analytical calculations.Comment: 5 pages, 4 figure

    Test of a Jastrow-type wavefunction for a trapped few-body system in one dimension

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    For a system with interacting quantum mechanical particles in a one-dimensional harmonic oscillator, a trial wavefunction with simple structure based on the solution of the corresponding two-particle system is suggested and tested numerically. With the inclusion of a scaling parameter for the distance between particles, at least for the very small systems tested here the ansatz gives a very good estimate of the ground state energy, with the error being of the order of ~1% of the gap to the first excited state

    Signatures of Wigner Localization in Epitaxially Grown Nanowires

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    It was predicted by Wigner in 1934 that the electron gas will undergo a transition to a crystallized state when its density is very low. Whereas significant progress has been made towards the detection of electronic Wigner states, their clear and direct experimental verification still remains a challenge. Here we address signatures of Wigner molecule formation in the transport properties of InSb nanowire quantum dot systems, where a few electrons may form localized states depending on the size of the dot (i.e. the electron density). By a configuration interaction approach combined with an appropriate transport formalism, we are able to predict the transport properties of these systems, in excellent agreement with experimental data. We identify specific signatures of Wigner state formation, such as the strong suppression of the antiferromagnetic coupling, and are able to detect the onset of Wigner localization, both experimentally and theoretically, by studying different dot sizes.Comment: 4 pages, 4 figure
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