Local and medium range order influence on the magnetic behavior of sputtered ga-rich fega thin films

We have investigated the influence of the growth power on the structural properties of Fe_100_(-x)Ga_x (x ca. 29) films sputtered in the ballistic regime in the oblique incidence. By means of different structural characterizations, mainly X-ray diffraction and X-ray absorption spectroscopy, we have reached a deeper understanding about the influence of the local and medium range order on the magnetic behavior of Ga-rich FeGa thin films. On the one hand, the increase of the growth power reduces the crystallite size (medium order) that promotes the decrease of the coercive field of the layers. On the other hand, the growth power also determines the local order as it controls the formation of the A2, B2, and D0_3 structural phases. The increase of the uniaxial in-plane magnetic anisotropy with growth power has been correlated with the enhancement of both Ga pairs and a tetragonal distortion. The results presented in this work give more evidence about the magnetic anisotropy sources in Ga-rich FeGa alloys, and therefore, it helps to understand how to achieve a better control of the magnetic properties in this family of alloys

The role of surface to bulk ratio on the development of magnetic anisotropy in high Ga content Fe100-xGax thin films

In this work we show the development of bulk in-plane magnetic anisotropy in high Ga-content (Ga = 28 at. %) Fe_(100-x)Ga_x thin films as the layer thickness increases. This result is in clear contrast with the generally reported decrease of this anisotropy with the film thickness. We propose the interrelation between the enhancement of the Ga-pair correlations and a collinear distortion of the bcc structure within the sample plane as the origin of the magnetic anisotropy. Our results have been obtained by employing a combination of long and local range structural probe techniques with bulk and surface magnetic characterization techniques. The key point shown in this work is that the in-plane structural anisotropy and hence, the magnetic anisotropy, are developed as the layer thickness increases. This fact strongly suggests that the surface to bulk free energy ratio plays a key role in the formation of ordered phases with a distorted bcc cell in Fe_(100-x)Ga_x films with x around 28 at. %. Our work also shows the arising of new phenomena in these high Ga content alloys due to the close correlation between structural and magnetic properties

Determination of the local structure of Sr2−x_{2-x}Mx_xIrO4_4 (M = K, La) as a function of doping and temperature

The local structure of correlated spin-orbit insulator Sr$_{2-x}$M$_x$IrO$_4$ (M = K, La) has been investigated by Ir L$_3$-edge extended x-ray absorption fine structure measurements. The measurements were performed as a function of temperature for different dopings induced by substitution of Sr with La or K. It is found that Ir-O bonds have strong covalency and they hardly show any change across the N\'eel temperature. In the studied doping range, neither Ir-O bonds nor their dynamics, measured by their mean square relative displacements, show any appreciable change upon carrier doping, indicating possibility of a nanoscale phase separation in the doped system. On the other hand, there is a large increase of the static disorder in Ir-Sr correlation, larger for K doping than La doping. Similarities and differences with respect to the local lattice displacements in cuprates are briefly discussed.Comment: Main text: 6 pages, 4 figures, Supplemental information: 2 pages, 2 figure

Correlation between local structure and magnetic behavior in co-sputtered Tb_xFe_(73)Ga_(27-x) (7 ≤ x ≤11) thin films

We report on the evolution of the microstructure of Tb-Fe-Ga films deposited by co-sputtering from Tb_(33)Fe_(67) and Fe_(72)Ga_(28) targets. The sputtering power was fixed (90 W) in the Fe_(72)Ga_(28) whereas it was increased from 50 to 90 W in the Tb_(33)Fe_(67) target resulting on Tb_xFe_(73)Ga_(27-x) layers with 7 ≤ x ≤ 11. The local structure was determined by means of x-ray absorption fine structure spectroscopy at Fe-K, Ga-K and Tb-L_(3) edges. The increase of Tb in the alloy promotes the phase segregation that produces a larger amount of the TbFe_2 structural phase. The structural results have been correlated with the magnetic characterization that shows the enhancement of the out-of-plane component of the magnetization

Charge density wave in layered La1-xCexSb2

The layered rare-earth diantimonides RSb2 are anisotropic metals with generally low electronic densities whose properties can be modified by substituting the rare earth. LaSb2 is a nonmagnetic metal with a low residual resistivity presenting a low-temperature magnetoresistance that does not saturate with the magnetic field. It has been proposed that the latter can be associated to a charge density wave (CDW), but no CDW has yet been found. Here we find a kink in the resistivity above room temperature in LaSb2 (at 355 K) and show that the kink becomes much more pronounced with substitution of La by Ce along the La1−xCexSb2 series. We find signatures of a CDW in x-ray scattering, specific heat, and scanning tunneling microscopy (STM) experiments in particular for x ≈ 0.5. We observe a distortion of rare-earth–Sb bonds lying in-plane of the tetragonal crystal using x-ray scattering, an anomaly in the specific heat at the same temperature as the kink in resistivity and charge modulations in STM. We conclude that LaSb2 has a CDW which is stabilized in the La1−xCexSb2 series due to substitutional disorderThis work was supported by the Spanish MINECO (FIS2014-54498-R, MAT2011-27470-C02-02, and CSD-2009-00013), by the European Union (Graphene Flagship Contract No. CNECT-ICT-604391 and COST MP1201 action), and by the Comunidad de Madrid through programs Nanofrontmag-CM (S2013/MIT-2850) and MAD2D-CM (S2013/MIT-3007).We acknowledge MINECO and CSIC for financial support and for provision of synchrotron radiation facilities and would like to thank the SpLine BM25 staff for assistance in using the beamlin

Temperature-dependent local structure and superconductivity of BaPd2As2 and SrPd2As2

The local structures of 122-type paradium arsenides, namely BaPd2As2 and SrPd2As2, are examined by As K-edge extended x-ray absorption fine structure measurements to find a possible correlation between the variation of their superconducting transition temperature and the local structure. The local atomic distances are found to be consistent with average distances measured by diffraction techniques. The temperature dependence of mean square relative displacements reveal that, while BaPd2As2 is characterized by a local As-Pd soft mode, albeit with larger atomic disorder, SrPd2As2 shows anomalous As-Pd correlations with a kink at similar to 160 K due to hardening by raising temperature. We have discussed implications of these results and possible mechanisms of differing superconducting transition temperature in relation with the structural instability

Self-assembly of iron oxide precursor micelles driven by magnetic stirring time in sol-gel coatings

The purpose of this work is to fabricate self-assembled microstructures by the sol-gel method and study the morphological, structural and compositional dependence of epsilon-Fe_2O_3 nanoparticles embedded in silica when glycerol (GLY) and cetyl-trimethylammonium bromide (CTAB) are added as steric agents simultaneously. The combined action of a polyalcohol and a surfactant significantly modifies the morphology of the sample giving rise to a different microstructure in each of the studied cases (1, 3 and 7 days of magnetic stirring time). This is due to the fact that the addition of these two compounds leads to a considerable increase in gelation time as GLY can interact with the alkoxide group on the surface of the iron oxide precursor micelle and/or be incorporated into the hydrophilic chains of CTAB. This last effect causes the iron oxide precursor micelles to be interconnected forming aggregates whose size and structure depend on the magnetic stirring time of the sol-gel synthetic route. In this paper, crystalline structure, composition, purity and morphology of the sol-gel coatings densified at 960 degrees C are examined. Emphasis is placed on the nominal percentage of the different iron oxides found in the samples and on the morphological and structural differences. This work implies the possibility of patterning epsilon-Fe_2O_3 nanoparticles in coatings and controlling their purity by an easy one-pot sol-gel method

Understanding the adsorption process in ZIF-8 using high pressure crystallography and computational modelling

Understanding host–guest interactions and structural changes within porous materials is crucial for enhancing gas storage properties. Here, the authors combine cryogenic loading of gases with high pressure crystallography and computational techniques to obtain atomistic detail of adsorption-induced structural and energetic changes in ZIF-8

The role of surface to bulk ratio on the development of magnetic anisotropy in high Ga content Fe(100-x)Gax thin films

In this work we show the development of bulk in-plane magnetic anisotropy in high Ga-content (Ga = 28 at. %) Fe(100-x)Gax thin films as the layer thickness increases. This result is in clear contrast with the generally reported decrease of this anisotropy with the film thickness. We propose the interrelation between the enhancement of the Ga-pair correlations and a collinear distortion of the bcc structure within the sample plane as the origin of the magnetic anisotropy. Our results have been obtained by employing a combination of long and local range structural probe techniques with bulk and surface magnetic characterization techniques. The key point shown in this work is that the in-plane structural anisotropy and hence, the magnetic anisotropy, are developed as the layer thickness increases. This fact strongly suggests that the surface to bulk free energy ratio plays a key role in the formation of ordered phases with a distorted bcc cell in Fe(100-x)Gax films with x around 28 at. %. Our work also shows the arising of new phenomena in these high Ga content alloys due to the close correlation between structural and magnetic properties

Bandgap-Adjustment and Enhanced Surface Photovoltage in Y-Substituted LaTaIVO2N

Perovskite-type oxynitrides AB(O,N)3 are photocatalysts for overall water splitting under visible light illumination. In the past, structurally labile perovskite-type oxynitrides (e.g. YTaON2) were predicted to be highly suitable. In this work, we tackle the challenging YTa(O,N)3 synthesis by Y-substitution in LaTaIVO2N resulting in phase-pure La0.9Y0.1TaIVO2N, La0.75Y0.25TaIVO2N, and La0.7Y0.3TaIVO2N. By using microcrystalline YTaO4 together with an unconventional ammonolysis protocol we synthesized the highest reported weight fraction (82(2) wt%) of perovskite-type YTa(O,N)3. Ta4+ in La1–xYxTaIVO2N was verified by X-ray photoelectron spectroscopy (XPS) and X-ray near edge absorption structure (XANES) analysis. Density functional theory (DFT) calculations revealed a transparent conductor-like behavior explaining the unsusal red/orange color of the Ta4+-containing perovskites. In combination with crystal structure analysis the DFT calculations identified the orthorhombic strain as main descriptor for the unexpected trend of the optical bandgap (EG,x=0.3 ≈ EG,x=0EG,x=0.1EG,x=0.25). Surface photovoltage spectroscopy (SPS) of particulate La1–xYxTaIVO2N (x = 0, 0.1, 0.25, 0.3) films revealed negative photovoltages at photon energies exceeding 1.75 eV, confirming that these materials are n-type semiconductors with effective bandgaps of ~ 1.75 eV irrespective of the Y content. The photovoltage values increased with the Y content, suggesting an improved carrier generation and separation in the materials. However, increasing the Y content also slowed down the timescales for photovoltage generation/decay indicating trap states in the material. Based on our results, we suggest a significantly weaker as classically assumed impact of reduced B-site metal cations such as Ta4+ on the photovoltage and charge carrier recombination rate