Complex Analysis of a Piece of Toda Lattice

We study a small piece of two dimensional Toda lattice as a complex dynamical system. In particular the Julia set, which appears when the piece is deformed, is shown analytically how it disappears as the system approaches to the integrable limit.Comment: 17 pages, LaTe

Timing of sea ice retreat can alter phytoplankton community structure in the western Arctic Ocean

This study assesses the response of phytoplankton assemblages to recent climate change, especially with regard to the shrinking of sea ice in the northern Chukchi Sea of the western Arctic Ocean. Distribution patterns of phytoplankton groups in the late summers of 2008–2010 were analysed based on HPLC pigment signatures and, the following four major algal groups were inferred via multiple regression and cluster analyses: prasinophytes, diatoms, haptophytes and dinoflagellates. A remarkable interannual difference in the distribution pattern of the groups was found in the northern basin area. Haptophytes dominated and dispersed widely in warm surface waters in 2008, whereas prasinophytes dominated in cold water in 2009 and 2010. A difference in the onset date of sea ice retreat was evident among years–the sea ice retreat in 2008 was 1–2 months earlier than in 2009 and 2010. The spatial distribution of early sea ice retreat matched the areas in which a shift in algal community composition was observed. Steel-Dwass's multiple comparison tests were used to assess the physical, chemical and biological parameters of the four clusters. We found a statistically significant difference in temperature between the haptophyte-dominated cluster and the other clusters, suggesting that the change in the phytoplankton communities was related to the earlier sea ice retreat in 2008 and the corollary increase in sea surface temperatures. Longer periods of open water during the summer, which are expected in the future, may affect food webs and biogeochemical cycles in the western Arctic due to shifts in phytoplankton community structure

Fulde-Ferrell-Larkin-Ovchinnikov state in a perpendicular field of quasi two-dimensional CeCoIn5

A Fulde-Ferrell-Larkin-Ovchinnkov (FFLO) state was previously reported in the quasi-2D heavy fermion CeCoIn5 when a magnetic field was applied parallel to the ab-plane. Here, we conduct 115^In NMR studies of this material in a PERPENDICULAR field, and provide strong evidence for FFLO in this case as well. Although the topology of the phase transition lines in the H-T phase diagram is identical for both configurations, there are several remarkable differences between them. Compared to H//ab, the FFLO region for H perpendicular to the ab-plane shows a sizable decrease, and the critical field separating the FFLO and non-FFLO superconducting states almost ceases to have a temperature dependence. Moreover, directing H perpendicular to the ab-plane results in a notable change in the quasiparticle excitation spectrum within the planar node associated with the FFLO transition.Comment: 5 pages, 3 figure

Dual Resonance Model Solves the Yang-Baxter Equation

The duality of dual resonance models is shown to imply that the four point string correlation function solves the Yang-Baxter equation. A reduction of transfer matrices to $A_l$ symmetry is described by a restriction of the KP $\tau$ function to Toda molecules.Comment: 10 pages, LaTe

Orbital selectivity of the kink in the dispersion of Sr2RuO4

We present detailed energy dispersions near the Fermi level on the monolayer perovskite ruthenate Sr2RuO4, determined by high-resolution angle-resolved photoemission spectroscopy. An orbital selectivity of the kink in the dispersion of Sr2RuO4 has been found: A kink for the Ru 4d_xy orbital is clearly observed, but not for the Ru 4d_yz and 4d_zx ones. The result provides insight into the origin of the kink.Comment: 5 pages, 4 figures. Accepted for publication in Phys. Rev.

Radial Bargmann representation for the Fock space of type B

Let $\nu_{\alpha,q}$ be the probability and orthogonality measure for the $q$-Meixner-Pollaczek orthogonal polynomials, which has appeared in \cite{BEH15} as the distribution of the $(\alpha,q)$-Gaussian process (the Gaussian process of type B) over the $(\alpha,q)$-Fock space (the Fock space of type B). The main purpose of this paper is to find the radial Bargmann representation of $\nu_{\alpha,q}$. Our main results cover not only the representation of $q$-Gaussian distribution by \cite{LM95}, but also of $q^2$-Gaussian and symmetric free Meixner distributions on $\mathbb R$. In addition, non-trivial commutation relations satisfied by $(\alpha,q)$-operators are presented.Comment: 13 pages, minor changes have been mad

Phase Change Observed in Ultrathin Ba0.5Sr0.5TiO3 Films by in-situ Resonant Photoemission Spectroscopy

Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100)substrates by the pulsed laser deposition technique, and were studied by measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band region as a function of film thickness, both at room temperature and low temperature. Our results demonstrated an abrupt variation in the spectral structures between 2.8 nm (~7 monolayers) and 2.0 nm (~5 monolayers) Ba0.5Sr0.5TiO3 films, suggesting that there exists a critical thickness for phase change in the range of 2.0 nm to 2.8 nm. This may be ascribed mainly to the intrinsic size effects.Comment: 13 pages, 4 figure

Cyclotron resonance of correlated electrons in semiconductor heterostructures

The cyclotron resonance absorption of two-dimensional electrons in semiconductor heterostructures in high magnetic fields is investigated. It is assumed that the ionized impurity potential is a dominant scattering mechanism, and the theory explicitly takes the Coulomb correlation effect into account through the Wigner phonons. The cyclotron resonance linewidth is in quantitative agreement with the experiment in the Wigner crystal regime at T=4.2K. Similar to the cyclotron resonance theory of the charge density waves pinned by short-range impurities, the present results for the long-range scattering also show the doubling of the resonance peaks. However, unlike the case of the charge density waves, our theory gives the pinning mode independent of the bulk compressibility of the substrate materials.Comment: 6 pages, 5 figure

Electronic Structures of Fe3−xV_{3-x}V_x$Si Probed by Photoemission Spectroscopy

The electronic structures of the Heusler type compounds Fe$_{3-x}V$_x$Si in the concentration range between x = 0 and x = 1 have been probed by photoemission spectroscopy (PES). The observed shift of Si 2p core- level and the main valence band structres indicate a chemical potential shift to higher energy with increasing x. It is also clarified that the density of state at Fermi edge is owing to the collaboration of V 3d and Fe 3d derived states. Besides the decrease of the spectral intensity near Fermi edge with increasing x suggests the formation of pseudo gap at large x.Comment: 4 pages, 5 figures, 5 reference

The Effects of Applied Negative Bias Voltage on Structure and Optical Properties of a-C:H Films

Hydrogenated amorphous carbon (a-C:H) films have been synthesized by a radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) technique with different bias voltage from 0.0 to -0.5 kV. The Raman spectra displayed the polymer-like hydrogenated amorphous carbon (PLCH) film with 0.0 to -0.1 and a-C:H films with -0.2 to -0.5 kV of bias voltages. The surface chemical information of all films were studied by X-ray photo electron spectroscopy (XPS) technique, presented to C-C (sp2 and sp3) and C-O bonds, and relative carbon (C) and oxygen (O) atomics contents. The O contamination had affected on structure and optical properties. The true density of PLCH and a-C:H films were characterized by X-ray refractivity (XRR) method, showed the result as in the range of 1.16-1.73 g/cm3 that depending on an increasing of bias voltage. The hardness was proportional to the true density of films. In addition, the optical properties i.e. refractive index (n) and extinction coefficient (k) of these films were determined by a spectroscopic ellipsometry (SE) method that give formation to in 1.62-2.10 (n) and 0.04-0.15 (k) respectively. These results indicated that the optical properties confirmed the Raman results as presenting the structure changed with applied bias voltage increased