Amorphous molybdenum silicon superconducting thin films

Amorphous superconductors have become attractive candidate materials for superconducting nanowire single-photon detectors due to their ease of growth, homogeneity and competitive superconducting properties. To date the majority of devices have been fabricated using WxSi1-x, though other amorphous superconductors such as molybdenum silicide (MoxSi1-x) offer increased transition temperature. This study focuses on the properties of MoSi thin films grown by magnetron sputtering. We examine how the composition and growth conditions affect film properties. For 100 nm film thickness, we report that the superconducting transition temperature (Tc) reaches a maximum of 7.6 K at a composition of Mo83Si17. The transition temperature and amorphous character can be improved by cooling of the substrate during growth which inhibits formation of a crystalline phase. X-ray diffraction and transmission electron microscopy studies confirm the absence of long range order. We observe that for a range of 6 common substrates (silicon, thermally oxidized silicon, R- and C-plane sapphire, x-plane lithium niobate and quartz), there is no variation in superconducting transition temperature, making MoSi an excellent candidate material for SNSPDs.This work was supported by the EPSRC through grant EP/I036303/1. RHH acknowledges a Royal Society of London University Research Fellowship. The data used in this paper can be accessed at https://www.repository.cam.ac.uk/handle/1810/247704.This is the final version of the article. It first appeared from AIP Publishing via http://dx.doi.org/10.1063/1.492828

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

In this paper we report on the impact that the quantum well growth temperature has on the internal quantum efficiency and carrier recombination dynamics of two sets of InGaN/GaN multiple quantum well samples, designed to emit at 460 and 530 nm, in which the indium content of the quantum wells within each sample set was maintained. Measurements of the internal quantum efficiency of each sample set showed a systematic variation, with quantum wells grown at a higher temperature exhibiting higher internal quantum efficiency and this variation was preserved at all excitation power densities. By investigating the carrier dynamics at both 10 K and 300 K we were able to attribute this change in internal quantum efficiency to a decrease in the non-radiative recombination rate as the QW growth temperature was increased which we attribute to a decrease in incorporation of the point defects.This work was carried out with the financial support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/I012591/1 and EP/H011676/1.This is the final version of the article. It first appeared from Wiley via https://doi.org/10.1002/pssc.20151018

Dislocation core structures in (0001) InGaN

Threading dislocation core structures in c-plane GaN and InxGa1−xN (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and InxGa1−xN. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in InxGa1−xN, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in InxGa1−xN, consistent with predictions from atomistic Monte Carlo simulations.This work was funded in part by the Cambridge Commonwealth Trust, St. John’s College and the EPSRC (grant number EP/I012591/1). MAM acknowledges support from the Royal Society through a University Research Fellowship. Additional support was provided by the EPSRC (Supplementary data for EPSRC [49] is available) through the UK National Facility for Aberration-Corrected STEM (SuperSTEM). The Titan 80-200kV ChemiSTEM™ was funded through HM Government (UK) and is associated with the capabilities of the University of Manchester Nuclear Manufacturing (NUMAN) capabilities. SJH acknowledges funding from the Defence Threat Reduction Agency (DTRA) USA (grant number HDTRA1-12-1-0013). The authors also acknowledge C. M. McGilvery and A. Kovacs for helpful discussions.This is the author accepted manuscript. It is currently under an indefinite embargo pending publication by AIP

Structure and strain relaxation effects of defects in In<inf>x</inf>Ga<inf>1-x</inf>N epilayers

The formation of trench-defects is observed in 160 nm-thick InxGa1-xN epilayers with x ≤ 0.20, grown on GaN on (0001) sapphire substrates using metalorganic vapour phase epitaxy. The trench-defect density increases with increasing indium content, and high resolution transmission electron microscopy shows an identical structure to those observed previously in InGaN quantum wells, comprising meandering stacking mismatch boundaries connected to an I1-type basal plane stacking fault. These defects do not appear to relieve in-plane compressive strain. Other horizontal sub-interface defects are also observed for these samples and are found to be pre-existing threading dislocations which form half-loops by bending into the basal-plane, and not basal-plane stacking faults, as previously reported by other groups. The origins of these defects are discussed, and are likely to originate from a combination of the small in-plane misorientation of the sapphire substrate and the thermal mismatch strain between the GaN and InGaN layers grown at different temperatures.This work was funded in part by the Cambridge Commonwealth trust and the EPSRC. SKR is funded through the Cambridge-India Partnership Fund and Indian Institute of Technology Bombay via a scholarship. SKR also acknowledges funds from St. John’s College. MAM acknowledges support from the Royal Society through a University Research Fellowship.This is the accepted manuscript version. The final version is available from AIP at http://scitation.aip.org/content/aip/journal/jap/116/10/10.1063/1.4894688

Structure and composition of non-polar (11-20) InGaN nanorings grown by modified droplet epitaxy

Droplets grown by modified droplet epitaxy on non-polar (11-20) surfaces of InGaN epilayers on GaN have been seen to be associated with underlying ring-like structures. This work discusses droplet etching as a possible mechanism for ring formation, and droplet creeping as a possible explanation for the droplets sitting askew of the ring centre. Transmission electron microscopy (TEM) analysis shows the droplets to move along the c-axis, and indicates that they have a very high In content.The authors gratefully acknowledge funding from the Engineering and Physical Sciences Research Council (Grant number EP/M011 682/1).This is the author accepted manuscript. The final version is available from Wiley via http://dx.doi.org/10.1002/pssb.20155263

Lead-Free Polycrystalline Ferroelectric Nanowires with Enhanced Curie Temperature

Ferroelectrics are important technological materials with wide-ranging applications in electronics, communication, health, and energy. While lead-based ferroelectrics have remained the predominant mainstay of industry for decades, environmentally friendly lead-free alternatives are limited due to relatively low Curie temperatures (T C) and/or high cost in many cases. Efforts have been made to enhance T C through strain engineering, often involving energy-intensive and expensive fabrication of thin epitaxial films on lattice-mismatched substrates. Here, a relatively simple and scalable sol-gel synthesis route to fabricate polycrystalline (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 nanowires within porous templates is presented, with an observed enhancement of T C up to ≈300 °C as compared to ≈90 °C in the bulk. By combining experiments and theoretical calculations, this effect is attributed to the volume reduction in the template-grown nanowires that modifies the balance between different structural instabilities. The results offer a cost-effective solution-based approach for strain-tuning in a promising lead-free ferroelectric system, thus widening their current applicability

High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

This chapter briefly describes the fundamentals of high-resolution electron microscopy techniques. In particular, the Peak Pairs approach for strain mapping with atomic column resolution, and a quantitative procedure to extract atomic column compositional information from Z-contrast high-resolution images are presented. It also reviews the structural, compositional, and strain results obtained by conventional and advanced transmission electron microscopy methods on a number of III–V semiconductor nanostructures and heterostructures

Critical current densities of MOCVD tapes for different current directions

The critical current density Jc of an MOCVD/IBAD coated conductor was measured on tracks patterned longitudinally (L) and transversely (T) to the tape direction. Despite the samples' vicinality no dependence J c of on track direction was found for magnetic fields applied perpendicular to the film plane. In angular out-of-plane measurements the previously reported asymmetry due to tilted precipitate planes was observed in an L track, whereas curves from a T track were almost perfectly symmetric with similarly high absolute values of Jc. At low fields the effects of surface pinning were seen. Our results show that in most scenarios the current carrying capability is equally as good parallel and perpendicular to the tape direction, which is highly relevant for ROEBEL cables. In measurements where the magnetic field was swept in the film plane the anisotropy was found to be significantly higher than for MOD/RABiTS samples, which we explain by the different morphology of grain boundaries in the tapes. At low temperatures Jc of a T track exhibited a clear signature of vortex channeling. © 2010 IEEE

Structure and strain relaxation effects of defects in InxGa1-xN epilayers

The formation of trench defects is observed in 160 nm-thick InxGa1-xN epilayers with x <= 0.20, grown on GaN on (0001) sapphire substrates using metalorganic vapour phase epitaxy. The trench defect density increases with increasing indium content, and high resolution transmission electron microscopy shows an identical structure to those observed previously in InGaN quantum wells, comprising meandering stacking mismatch boundaries connected to an I-1-type basal plane stacking fault. These defects do not appear to relieve in-plane compressive strain. Other horizontal sub-interface defects are also observed within the GaN pseudosubstrate layer of these samples and are found to be pre-existing threading dislocations which form half-loops by bending into the basal plane, and not basal plane stacking faults, as previously reported by other groups. The origins of these defects are discussed and are likely to originate from a combination of the small in-plane misorientation of the sapphire substrate and the thermal mismatch strain between the GaN and InGaN layers grown at different temperatures. (C) 2014 AIP Publishing LLC

Properties of GaN nanowires with Sc<inf>x</inf>Ga<inf>1−x</inf>N insertion

We report the first GaN nanowire structure incorporating a GaN/Sc x Ga 1–x N axial heterostructure. A 20 nm Sc x Ga 1−x N layer was inserted into GaN nanowires grown by a catalyst-free self-assembled method using plasma-assisted molecular beam epitaxy (PA-MBE). The insertion was characterised by energy dispersive X-ray spectroscopy in the scanning transmission electron microscope (STEM-EDX). High resolution electron microscopy revealed the Sc x Ga 1−x N to have a wurtzite crystal structure as expected at this composition. Cathodoluminescence (CL) imaging in the scanning electron microscope (SEM) at 77 K revealed an emission peak at 377 nm which is not present in samples without the Sc x Ga 1−x N insertion. A correlative study using STEM-EDX and low temperature SEM-CL indicates a direct link between the 377 nm emission and the Sc x Ga 1−x N insertion. This is tentatively attributed to a type-II band offset between the GaN and the Sc x Ga 1−x N insertion