Intrinsic spin Hall effect in platinum metal

Spin Hall effect in metallic Pt is studied with first-principles relativistic band calculations. It is found that intrinsic spin Hall conductivity (SHC) is as large as $\sim 2000 (\hbar/e)(\Omega {\rm cm})^{-1}$ at low temperature, and decreases down to $\sim 200 (\hbar/e)(\Omega {\rm cm})^{-1}$ at room temperature. It is due to the resonant contribution from the spin-orbit splitting of the doubly degenerated $d$-bands at high-symmetry $L$ and $X$ points near the Fermi level. By modeling these near degeneracies by effective Hamiltonian, we show that SHC has a peak near the Fermi energy and that the vertex correction due to impurity scattering vanishes. We therefore argue that the large spin Hall effect observed experimentally in platinum is of intrinsic nature.Comment: Accepted for publication in Phys. Rev. Let

Orbital magnetism in the half-metallic Heusler alloys

Using the fully-relativistic screened Korringa-Kohn-Rostoker method I study the orbital magnetism in the half-metallic Heusler alloys. Orbital moments are almost completely quenched and they are negligible with respect to the spin moments. The change in the atomic-resolved orbital moments can be easily explained in terms of the spin-orbit strength and hybridization effects. Finally I discuss the orbital and spin moments derived from X-ray magnetic circular dichroism experiments

Interface properties of the NiMnSb/InP and NiMnSb/GaAs contacts

We study the electronic and magnetic properties of the interfaces between the half-metallic Heusler alloy NiMnSb and the binary semiconductors InP and GaAs using two different state-of-the-art full-potential \textit{ab-initio} electronic structure methods. Although in the case of most NiMnSb/InP(001) contacts the half-metallicity is lost, it is possible to keep a high degree of spin-polarization when the interface is made up by Ni and P layers. In the case of the GaAs semiconductor the larger hybridization between the Ni-$d$ and As-$p$ orbitals with respect to the hybridization between the Ni-$d$ and P-$p$ orbitals destroys this polarization. The (111) interfaces present strong interface states but also in this case there are few interfaces presenting a high spin-polarization at the Fermi level which can reach values up to 74%.Comment: 9 pages, 9 figure

Cd-vacancy and Cd-interstitial complexes in Si and Ge

The electrical field gradient (EFG), measured e.g. in perturbed angular correlation (PAC) experiments, gives particularly useful information about the interaction of probe atoms like 111In / 111Cd with other defects. The interpretation of the EFG is, however, a difficult task. This paper aims at understanding the interaction of Cd impurities with vacancies and interstitials in Si and Ge, which represents a controversial issue. We apply two complementary ab initio methods in the framework of density functional theory (DFT), (i) the all electron Korringa-Kohn-Rostoker (KKR) Greenfunction method and (ii) the Pseudopotential-Plane-Wave (PPW) method, to search for the correct local geometry. Surprisingly we find that both in Si and Ge the substitutional Cd-vacancy complex is unstable and relaxes to a split-vacancy complex with the Cd on the bond-center site. This complex has a very small EFG, allowing a unique assignment of the small measured EFGs of 54MHz in Ge and 28MHz in Si. Also, for the Cd-selfinterstitial complex we obtain a highly symmetrical split configuration with large EFGs, being in reasonable agreement with experiments

Lattice vibrations and structural instability in Cesium near the cubic to tetragonal transition

Under pressure cesium undergoes a transition from a high-pressure fcc phase (Cs-II) to a collapsed fcc phase (Cs-III) near 4.2GPa. At 4.4GPa there follows a transition to the tetragonal Cs-IV phase. In order to investigate the lattice vibrations in the fcc phase and seek a possible dynamical instability of the lattice, the phonon spectra of fcc-Cs at volumes near the III-IV transition are calculated using Savrasov's density functional linear-response LMTO method. Compared with quasiharmonic model calculations including non-central interatomic forces up to second neighbours, at the volume $V/V_0= 0.44$ ($V_0$ is the experimental volume of bcc-Cs with $a_0$=6.048{\AA}), the linear-response calculations show soft intermediate wavelength $T_{[1\bar{1}0]}[{\xi}{\xi}0]$ phonons. Similar softening is also observed for short wavelength $L[\xi\xi\xi]$ and $L[00\xi]$ phonons and intermediate wavelength $L[\xi\xi\xi]$ phonons. The Born-von K\'{a}rm\'{a}n analysis of dispersion curves indicates that the interplanar force constants exhibit oscillating behaviours against plane spacing $n$ and the large softening of intermediate wavelength $T_{[1\bar{1}0]}[{\xi}{\xi}0]$ phonons results from a negative (110)-interplanar force-constant $\Phi_{n=2}$. The frequencies of the $T_{[1\bar{1}0]}[{\xi}{\xi}0]$ phonons with $\xi$ around 1/3 become imaginary and the fcc structure becomes dynamically unstable for volumes below $0.41V_0$. It is suggested that superstructures corresponding to the $\mathbf{q}{\neq}0$ soft mode should be present as a precursor of tetragonal Cs-IV structure.Comment: 12 pages, 5 figure

First-principles study of vibrational and dielectric properties of {\beta}-Si3N4

First-principles calculations have been conducted to study the structural, vibrational and dielectric properties of {\beta}-Si3N4. Calculations of the zone-center optical-mode frequencies (including LO-TO splittings), Born effective charge tensors for each atom, dielectric constants, using density functional perturbation theory, are reported. The fully relaxed structural parameters are found to be in good agreement with experimental data. All optic modes are identified and agreement of theory with experiment is excellent. The static dielectric tensor is decomposed into contributions arising from individual infrared-active phonon modes. It is found that high-frequency modes mainly contribute to the lattice dielectric constant.Comment: 15pages, 1 figure, 5 table

Vacancy complexes with oversized impurities in Si and Ge

In this paper we examine the electronic and geometrical structure of impurity-vacancy complexes in Si and Ge. Already Watkins suggested that in Si the pairing of Sn with the vacancy produces a complex with the Sn-atom at the bond center and the vacancy split into two half vacancies on the neighboring sites. Within the framework of density-functional theory we use two complementary ab initio methods, the pseudopotential plane wave (PPW) method and the all-electron Kohn-Korringa-Rostoker (KKR) method, to investigate the structure of vacancy complexes with 11 different sp-impurities. For the case of Sn in Si, we confirm the split configuration and obtain good agreement with EPR data of Watkins. In general we find that all impurities of the 5sp and 6sp series in Si and Ge prefer the split-vacancy configuration, with an energy gain of 0.5 to 1 eV compared to the substitutional complex. On the other hand, impurities of the 3sp and 4sp series form a (slightly distorted) substitutional complex. Al impurities show an exception from this rule, forming a split complex in Si and a strongly distorted substitutional complex in Ge. We find a strong correlation of these data with the size of the isolated impurities, being defined via the lattice relaxations of the nearest neighbors.Comment: 8 pages, 4 bw figure

Tilt-angle landscapes and temperature dependence of the conductance in biphenyl-dithiol single-molecule junctions

Using a density-functional-based transport method we study the conduction properties of several biphenyl-derived dithiol (BPDDT) molecules wired to gold electrodes. The BPDDT molecules differ in their side groups, which control the degree of conjugation of the pi-electron system. We have analyzed the dependence of the low-bias zero-temperature conductance on the tilt angle phi between the two phenyl ring units, and find that it follows closely a cos^2(phi) law, as expected from an effective pi-orbital coupling model. We show that the tilting of the phenyl rings results in a decrease of the zero-temperature conductance by roughly two orders of magnitude, when going from a planar conformation to a configuration in which the rings are perpendicular. In addition we demonstrate that the side groups, apart from determining phi, have no influence on the conductance. All this is in agreement with the recent experiment by Venkataraman et al. [Nature 442, 904 (2006)]. Finally, we study the temperature dependence of both the conductance and its fluctuations and find qualitative differences between the examined molecules. In this analysis we consider two contributions to the temperature behavior, one coming from the Fermi functions and the other one from a thermal average over different contact configurations. We illustrate that the fluctuations of the conductance due to temperature-induced changes in the geometric structure of the molecule can be reduced by an appropriate design.Comment: 9 pages, 6 figures; submitted to Phys. Rev.

Photoelectron spectra of aluminum cluster anions: Temperature effects and ab initio simulations

Photoelectron (PES) spectra from aluminum cluster anions (from 12 to 15 atoms) at various temperature regimes, were studied using ab-initio molecular dynamics simulations and experimentally. The calculated PES spectra, obtained via shifting of the simulated electronic densities of states by the self-consistently determined values of the asymptotic exchange-correlation potential, agree well with the measured ones, allowing reliable structural assignments and theoretical estimation of the clusters' temperatures.Comment: RevTex, 3 gif figures. Scheduled for Oct 15, 1999, issue of Phys. Rev. B as Rapid Communicatio

Strong correlation effects of the Re 5dd electrons on the metal-insulator transition in Ca2_2FeReO6_6

We have investigated the electronic structure of polycrystalline Ca$_2$FeReO$_6$ using photoemission spectroscopy and band-structure calculations within the local-density approximation+$U$ (LDA+$U$) scheme. In valence-band photoemission spectra, a double-peak structure which is characteristic of the metallic double perovskite series has been observed near the Fermi level ($E_{\rm F}$), although it is less distinct compared to the Sr$_2$FeMoO$_6$ case. The leading near-$E_{\rm F}$ structure has a very weak spectral weight at $E_{\rm F}$ above the metal-insulator transition (MIT) temperature $T_{\rm MI}$ of $\sim$140 K, and it loses the $E_{\rm F}$ weight below $T_{\rm MI}$, forming a small energy gap. To reproduce this small energy gap in the calculation, we require a very large effective $U$ ($U_{\rm eff}$) for Re (4 eV) in addition to a relatively large $U_{\rm eff}$ for Fe (4 eV). Although the most of the experimental features can be interpreted with the help of the band theory, the overall agreement between the theory and the experiment was not satisfactory. We demonstrate that the effective transfer integral between Fe and Re is actually smaller than that between Fe and Mo in Ca$_2$FeMoO$_6$, which can explain both MIT and very high ferrimagnetic transition temperature.Comment: 7 pages text, 5 figures, to be pulished in Phys. Rev.