1,430 research outputs found

    Dose-dependent positive-to-negative shift of litter effects on seedling growth: a modelling study on 35 plant litter types

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    Modelling the inter-relationships between litter accumulation and plant–soil feedback is a major challenge to predict natural and agricultural ecosystem dynamics. At increasing levels of undecomposed plant litter, seedling growth tends to show a multi-faceted response trend, characterised by a peak of positive stimulation at lower dosage followed by inhibition at higher dosage. In this study, a new logistic model was developed to describe such trend and disentangle substrate-specific positive and negative effects of plant litter. The model was tested on 35 litter types applied to the common phytometer Lepidium sativum; all litter types were collected in Mediterranean shrublands of Campania region (southern Italy). Model fitting resulted to be generally higher relative to the widely used linear log response model, although in only half of the cases it also gave more parsimonious results in terms of minimising information loss. Positive and negative effects of plant litter resulted to be uncorrelated, showing that the overall trend is probably the result of the combined action of separate factors rather than the effect of a single factor behaving differently at the different doses. The results of this work provide new tools to finely tune the optimal doses in experiments on hormesis and litter phytotoxicity, through the identification of the most suited doses to centre the range of nearly linear response to litter concentration. A wide screening is also presented on the phytotoxicity profiles of a number of spontaneous plant species widely distributed in the Mediterranean area

    Surface roughness and thermal conductivity of semiconductor nanowires: going below the Casimir limit

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    By explicitly considering surface roughness at the atomic level, we quantitatively show that the thermal conductivity of Si nanowires can be lower than Casimir's classical limit. However, this violation only occurs for deep surface degradation. For shallow surface roughness, the Casimir formula is shown to yield a good approximation to the phonon mean free paths and conductivity, even for nanowire diameters as thin as 2.22 nm. Our exact treatment of roughness scattering is in stark contrast with a previously proposed perturbative approach, which is found to overpredict scattering rates by an order of magnitude. The obtained results suggest that a complete theoretical understanding of some previously published experimental results is still lacking.Comment: 11 pages, 4 figure

    Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

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    Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here we measure the thermal conductivity of crystalline AlN by the 3ω{\omega} method, finding it ranges from 674 ±{\pm} 56 W/m/K at 100 K to 186 ±{\pm} 7 W/m/K at 400 K, with a value of 237 ±{\pm} 6 W/m/K at room temperature. We compare these data with analytical models and first principles calculations, taking into account atomic-scale defects (O, Si, C impurities, and Al vacancies). We find Al vacancies play the greatest role in reducing thermal conductivity because of the largest mass-difference scattering. Modeling also reveals that 10% of heat conduction is contributed by phonons with long mean free paths, over ~7 μ{\mu}m at room temperature, and 50% by phonons with MFPs over ~0.3 μ{\mu}m. Consequently, the effective thermal conductivity of AlN is strongly reduced in sub-micron thin films or devices due to phonon-boundary scattering

    MNHMT2009-18249 REVISITING THE THERMAL CONDUCTIVITY OF NANOPOROUS MATERIALS

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    ABSTRACT Although the thermal conductivity of nanoporous materials has been investigated in the past, previous models have overestimated the small pore limit. Various authors had proposed a cylindrical boundary geometry to mimic the pore's environment. This permits to solve the phonon Boltzmann equation analytically [1]or numerically [2], but for fixed porosity it leads to a saturation of the thermal conductivity at small pore diameters. We show that such saturation is a spurious effect of the cylindrical boundary approximation. By implementing a Monte Carlo calculation with correct boundary conditions, we obtain considerably different thermal conductivities than predicted by the cylindrical boundary geometry. The approach is illustrated in the case of Si and SiGe nanoporous materials

    Souvenir Purchase Motivations and Product Attribute Preferences among Arts and Design Students amidst Covid-19

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    Despite the onslaught of COVID-19, people still travel and tourism can only thrive further upon its end. Souvenir shopping has long been integral to the tourism business and one’s travel experience. This quantitative non-experimental descriptive correlational study aimed to determine the relationship between souvenir purchase motivations and product attribute preferences among the randomly selected 50 Grade 12 Arts and Design students in the University of San Carlos South Campus for the school year 2021-2022. Two standardized and reliable Likert-type survey tools were used to collect data. Results revealed that students acquire souvenirs for a variety of reasons before making their decision. Students also valued the portability, aesthetic value, and authenticity of an item when looking for a souvenir. Researchers found out that there is a high positive correlation between souvenir purchase motivations and product attribute preferences and the relationship between the two variables is found to be significant, r (48) = 0.547, p < 0.05. This means that students who go on trips have distinct motivations and it affects their decision-making towards purchasing souvenir items. This study recommends that the variables be tested in more settings post-pandemic, as travel restrictions ease worldwide

    Very Large Baseline Array observations of Mrk 6 : probing the jet-lobe connection

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    We present the results of high-resolution VLBI (very long baseline interferometry) observations at 1.6 and 4.9 GHz of the radio-loud Seyfert galaxy, Mrk 6. These observations are able to detect a compact radio core in this galaxy for the first time. The core has an inverted spectral index (α1.6 4.9 = +1.0 ± 0.2) and a brightness temperature of 1 × 108 K. Three distinct radio components, which resemble jet elements and/or hotspots, are also detected. The position angles of these elongated jet elements point not only to a curved jet in Mrk 6, but also towards a connection between the AGN and the kpc-scale radio lobes/bubbles in this galaxy. Firmer constraints on the star formation rate provided by new Herschel observations (SFR <0.8 M⊙ yr-1) make the starburst-wind-powered bubble scenario implausible. From plasma speeds, obtained via prior Chandra X-ray observations, and ram pressure balance arguments for the interstellar medium and radio bubbles, the north-south bubbles are expected to take 7.5 × 106 yr to form, and the east-west bubbles 1.4 × 106 yr. We suggest that the jet axis has changed at least once in Mrk 6 within the last ≈107 yr. A comparison of the nuclear radio-loudness of Mrk 6 and a small sample of Seyfert galaxies with a subset of low-luminosity FR I radio galaxies reveals a continuum in radio properties.Peer reviewe

    Heat conductance is strongly anisotropic for pristine silicon nanowires

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    We compute atomistically the heat conductance for ultra-thin pristine silicon nanowires (SiNWs) with diameters ranging from 1 to 5 nm. The room temperature thermal conductance is found to be highly anisotropic: wires oriented along the direction have 50-75% larger conductance than wires oriented along the and directions. We show that the anisotropies can be qualitatively understood and reproduced from the bulk phonon band structure. Ab initio density functional theory (DFT) is used to study the thinnest wires, but becomes computationally prohibitive for larger diameters, where we instead use the Tersoff empirical potential model (TEP). For the smallest wires, the thermal conductances obtained from DFT- and TEP calculations agree within 10%. The presented results could be relevant for future phonon-engineering of nanowire devices.Comment: 7 pages, 5 figure

    An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach

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    The Landauer approach provides a conceptually simple way to calculate the intrinsic thermoelectric (TE) parameters of materials from the ballistic to the diffusive transport regime. This method relies on the calculation of the number of propagating modes and the scattering rate for each mode. The modes are calculated from the energy dispersion (E(k)) of the materials which require heavy computation and often supply energy relation on sparse momentum (k) grids. Here an efficient method to calculate the distribution of modes (DOM) from a given E(k) relationship is presented. The main features of this algorithm are, (i) its ability to work on sparse dispersion data, and (ii) creation of an energy grid for the DOM that is almost independent of the dispersion data therefore allowing for efficient and fast calculation of TE parameters. The inclusion of scattering effects is also straight forward. The effect of k-grid sparsity on the compute time for DOM and on the sensitivity of the calculated TE results are provided. The algorithm calculates the TE parameters within 5% accuracy when the K-grid sparsity is increased up to 60% for all the dimensions (3D, 2D and 1D). The time taken for the DOM calculation is strongly influenced by the transverse K density (K perpendicular to transport direction) but is almost independent of the transport K density (along the transport direction). The DOM and TE results from the algorithm are bench-marked with, (i) analytical calculations for parabolic bands, and (ii) realistic electronic and phonon results for Bi2Te3Bi_{2}Te_{3}.Comment: 16 Figures, 3 Tables, submitted to Journal of Computational electronic
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