The emergence of classical behavior in magnetic adatoms

A wide class of nanomagnets shows striking quantum behavior, known as quantum spin tunneling (QST): instead of two degenerate ground states with opposite magnetizations, a bonding-antibonding pair forms, resulting in a splitting of the ground state doublet with wave functions linear combination of two classically opposite magnetic states, leading to the quenching of their magnetic moment. Here we study how QST is destroyed and classical behavior emerges in the case of magnetic adatoms, as the strength of their coupling, either to the substrate or to each other, is increased. Both spin-substrate and spin-spin coupling renormalize the QST splitting to zero allowing the environmental decoherence to eliminate superpositions between classical states, leading to the emergence of spontaneous magnetization.Comment: 5 pages, 4 figure

Trap Barrier System (TBS) as a New Tool for Rodent Pest Management in Irrigated Rice in Africa

Rodent infestation poses a serious threat to smallholder farmers in both developed and developing countries where a large proportion of potential crop yield is lost. In Tanzania, the average annual yield loss of rice is estimated to be around 5–12%. Management of rodent pests in Africa relies mostly on the use of rodenticides which, however, are often applied only when damage has already occurred rather than routinely. Rodenticides used in this way are rarely economically and ecologically sustainable for managing rodents in irrigated rice. A “community-based Trap-Barrier-System (cTBS)” provides an alternative novel rodent control approach for controlling rodents in rice fields. This is basically a system where rodents are trapped in a rice field that is planted a short period earlier than the surrounding fields and therefore attracting rodents from a much wider area than the field itself. The system has proved very successful in irrigated rice fields in Tanzania, increasing rice yields in the intervention fields by 40.91%. A single cTBS can confer protection in up to 16 ha of irrigated rice field. Therefore, if scaled up and used widely, TBS has a great potential for managing rodent pests and improving yield in irrigated rice fields

On the Connection of Anisotropic Conductivity to Tip Induced Space Charge Layers in Scanning Tunneling Spectroscopy of p-doped GaAs

The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning tunneling microscopy at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias voltages. Spatially resolved I(V)-spectroscopy is performed to identify their energetic origin and behavior. A crucial parameter - the STM tip's work function - is determined experimentally. The voltage dependent potential configuration and band bending situation is derived. Ways to validate the calculations with the experiment are discussed. Differential conductivity maps reveal that the triangular contrasts are only observed with a depletion layer present under the STM tip. The tunnel process leading to the anisotropic contrasts calls for electrons to tunnel through vacuum gap and a finite region in the semiconductor.Comment: 11 pages, 8 figure

Minimally invasive spin sensing with scanning tunneling microscopy

Minimizing the invasiveness of scanning tunneling measurements is paramount for observation of the magnetic properties of unperturbed atomic-scale objects. We show that the invasiveness of STM inspection on few-atom spin systems can be drastically reduced by means of a remote detection scheme, which makes use of a sensor spin weakly coupled to the sensed object. By comparing direct and remote measurements we identify the relevant perturbations caused by the local probe. For direct inspection we find that tunneling electrons strongly perturb the investigated object even for currents as low as 3 pA. Electrons injected into the sensor spin induce perturbations with much reduced probability. The sensing scheme uses standard differential conductance measurements, and is decoupled both by its non-local nature, and by dynamic decoupling due to the significantly different time scales at which the sensor and sensed object evolve. The latter makes it possible to effectively remove static interactions between the sensed object and the spin sensor while still allowing the spin sensing. In this way we achieve measurements with a reduction in perturbative effects of up to 100 times relative to direct scanning tunneling measurements, which enables minimally invasive measurements of a few-atom magnet's fragile spin states with STM

Large capacitance enhancement and negative compressibility of two-dimensional electronic systems at LaAlO3_3/SrTiO3_3 interfaces

Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both superconducts and displays indications of hysteretic magnetoresistance. An essential step for device applications is establishing the ability to vary the electronic conductivity of the electron system by means of a gate. We have fabricated metallic top gates above a conductive interface to vary the electron density at the interface. By monitoring capacitance and electric field penetration, we are able to tune the charge carrier density and establish that we can completely deplete the metallic interface with small voltages. Moreover, at low carrier densities, the capacitance is significantly enhanced beyond the geometric capacitance for the structure. In the same low density region, the metallic interface overscreens an external electric field. We attribute these observations to a negative compressibility of the electronic system at the interface. Similar phenomena have been observed previously in semiconducting two-dimensional electronic systems. The observed compressibility result is consistent with the interface containing a system of mobile electrons in two dimensions.Comment: 4 figures in main text; 4 figures in the supplemen

Band structure related wave function symmetry of amphoteric Si dopants in GaAs

Autocompensated Si-doped GaAs is studied with cross-sectional scanning tunneling spectroscopy (X-STS). The local electronic contrasts of substitutional Si(Ga) donors and Si(As) acceptors under the (110) cleavage plane are imaged with high resolution. Si(Ga) donor atoms exhibit radially symmetric contrasts. Si(As) acceptors have anisotropic features. The anisotropic acceptor contrasts are traced back to a tunnel process at the valence band edge. They reflect the probability density distribution of the localized acceptor hole state.Comment: 10 pages, 3 figure

Spin Excitations of a Kondo-Screened Atom Coupled to a Second Magnetic Atom

Screening the electron spin of a magnetic atom via spin coupling to conduction electrons results in a strong resonant peak in the density of states at the Fermi energy, the Kondo resonance. We show that magnetic coupling of a Kondo atom to another unscreened magnetic atom can split the Kondo resonance into two peaks. Inelastic spin excitation spectroscopy with scanning tunneling microscopy is used to probe the Kondo effect of a Co atom, supported on a thin insulating layer on a Cu substrate, that is weakly coupled to a nearby Fe atom to form an inhomogeneous dimer. The Kondo peak is split by interaction with the non-Kondo atom, but can be reconstituted with a magnetic field of suitable magnitude and direction. Quantitative modeling shows that this magnetic field results in a spin-level degeneracy in the dimer, which enables the Kondo effect to occur