Interface roughness effect on friction map under fretting contact conditions

In many industrial applications where fretting damage is observed in the contact (e.g. rotor/blade, electrical contacts, assembly joint, axe/wheel, clutch) the external loadings or geometry design cannot be changed. Therefore, the surface preparation and finishing process become essential to control and reduce the damage caused by fretting. In this paper, the authors present the experimental study of the initial surface roughness and machining process influence on fretting conditions in both partial and full sliding regimes. Surfaces prepared by milling and smooth abrasive polishing processes have been analysed. The influence of roughness on sliding behaviour and analysis of friction have been reported. Also, the contact pressure influence and qualitative analysis of fretting wear scar have been presented

Comparison of shot peening and nitriding surface treatments under complex fretting loadings

Considered as a plague for numerous industrial assemblies, fretting associated with small oscillatory displacements is encountered in all quasi-static contacts submitted to vibrations. According to the sliding conditions, fretting cracks and/or fretting wear can be observed in the contact area. On the other hand an important development has been achieved in the domain of surface engineering during the past three decades and numerous new surface treatments and coatings are now available. Therefore there is a critical challenge to evaluate the usefulness of these new treatments and/or coatings against fretting damage. To achieve this objective, a fast fretting methodology has been developed. It consists in quantifying the palliative friction, cracking and wear responses through a very small number of fretting tests. With use of defined quantitative variables, a normalized polar fretting damage chart approach is introduced. Finally, to evaluate the performance of the assemblies after these protective surface treatments under complex fretting loadings, an original sequence of partial slip and gross slip sliding procedure has been applied. It has been demonstrated that performing of a very short sequence of gross slip fretting cycles can critically decrease the resistance of the treated surfaces against cracking failures activated under subsequent partial slip loadings

Behaviour of shot peening combined with WC-Co HVOF coating under complex fretting wear and fretting fatigue loading conditions

This study investigated the fretting and fretting fatigue performance of tungsten carbide–cobalt (WC–Co) HVOF spray coating systems. Fretting wear and fretting fatigue tests of specimens with shot peening and WC–Co coatings on 30NiCrMo substrates were conducted. The WC-Co coating presents very good wear resistance and decreases by more than 9 times the energy wear coefficient (α) under fretting conditions. The tested coating reduces crack nucleation under both fretting and fretting fatigue studied situations. Finally the crack arrest conditions are evaluated by the combined fretting and fretting fatigue investigation. It is shown and explained how and why this combined surface treatment (shot peening and WC–Co) presents a very good compromise against wear and cracking fretting damage

Algorithms for minimizing maximum lateness with unit length tasks and resource constraints

AbstractThe problem we consider is that of scheduling n unit length tasks on identical processors in the presence of additional scarce resources. The objective is to minimize maximum lateness. It has been known for some time that the problem is NP-hard even for two processors and one resource type. In the present paper we show that the problem can be solved in O(n log n) time, even for an arbitrary number of resources if the instance of the problem has the saturation property (i.e., no resource unit is idle in an optimal schedule). For the more general problem without saturation, two heuristic algorithms and a branch and bound approach are proposed. The results of computational tests of the above methods are also reported

Elemental boron doping behavior in silicon molecular beam epitaxy

Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2×1020 cm−3, to elucidate profile control and electrical activation over the growth temperature range 450–900 °C. Precipitation and surface segregation effects were observed at doping levels of 2×1020 cm−3 for growth temperatures above 600 °C. At growth temperatures below 600 °C, excellent profile control was achieved with complete electrical activation at concentrations of 2×1020 cm−3, corresponding to the optimal MBE growth conditions for a range of Si/SixGe1−x heterostructures

Probing the interfacial and sub-surface structure of Si/Si1 – xGex multilayers

The ability to determine structural and compositional information from the sub-surface region of a semiconductor material has been demonstrated using a new time-of-flight medium energy ion scattering spectroscopy (ToF-MEISS) system. A series of silicon–silicon/germanium (Si/Si1 – xGex) heterostructure and multilayer samples, grown using both solid source molecular beam epitaxy (MBE) and gas source chemical vapor deposition (CVD) on Si(100) substrates, have been investigated. These data indicate that each individual layer of Si1 – xGex (x ~ 0.22) in both two- and three-period samples, can be uniquely identified with a resolution of approximately 3 nm. A comparison of MBE and CVD grown samples has also been made using layers with similar structures and composition. The total Ge content of each sample was confirmed using conventional Rutherford backscattering spectrometry

Evidence for quantum confinement in the photoluminescence of porous Si and SiGe

We have used anodization techniques to process porous surface regions in p-type Czochralski Si and in p-type Si0.85Ge0.15 epitaxial layers grown by molecular beam epitaxy. The SiGe layers were unrelaxed before processing. We have observed strong near-infrared and visible light emission from both systems. Analysis of the radiative and nonradiative recombination processes indicate that the emission is consistent with the decay of excitons localized in structures of one or zero dimensions